BAV19 [LGE]
Small Signal Switching Diodes; 小信号开关二极管
| 型号： | BAV19 |
| 厂家： | 
LGE |
| 描述： | Small Signal Switching Diodes |
| 文件： | 总2页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV17-BAV21
Small Signal Switching Diodes
VOLTAGE RANGE: 20-200 V
CURRENT: 250 mA
DO - 35(GLASS)
Features
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
Mechanical Data
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
25
MAXIMUM RATINGS
UNITS
BAV17
20
BAV18
50
BAV19
100
BAV20
150
200
BAV21
200
250
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
Half w ave rectification w ith resist.load
V
V
VR
25
60
120
VRM
mA
I(AV)
2501)
T =
and f 50Hz
Forw ard surge current @ t<1s and T =
@
25
A
1.0
A
25
IFSM
Ptot
RθJA
TJ
J
5001)
Pow er dissipation
Thermal resistance junction to ambient
Junction temperature
@ TA=25
mW
K/W
350
175
-55 --- +175
Storage temperature range
TSTG
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
TYP
-
MAX
UNITS
V
Forw ard voltage @ IF=100mA
-
-
-
-
1.0
100
15
-
VF
IR
nA
-
-
Leakage current
@Tj=25
mA
at reverse voltage
@Tj=100
@ V =V =0 f=1MHZ
V
F R
1.5
Capacitance
Reverse recovery time
pF
ns
CJ
trr
-
-
50
from IF=30mA to IR=30mA
from IRR=3mA, RL=100Ω.
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
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mail:lge@luguang.cn
BAV17-BAV21
Small Signal Switching Diodes
Ratings AND Charactieristic Curves
FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS
AMBIENT TEMPERATURE
FIG.1 -- FORWARD CHARACTERISTICS
A
.3
mA
1000
100
IO,IF
TJ=100
.2
DC CURRENT I
F
10
TJ=25
IF
CURRENT (RECTIF.) IF(AV)
1
.1
1
.1
℃
0
30
60
90
120 150
TA
.01
0
.2
.4
.6
.8
1.0V
VF
FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS
AMBIENT TEMPERATURE
FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
1000
mW
500
IR(TJ)
IR(25
)
400
100
Ptot
300
10
1
200
100
VR=50V
1
℃
0
100
200
0.1
TA
℃
0
100
200
TJ
FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS
FORWARD CURRENT
FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE
100
50
2
TJ=25
1.8
r
F
1.6
1.4
20
10
5
CJ
1.2
1
.8
.6
.4
.2
2
1
0
.1 .2 .5
1
2
5
10 20 50 100V
VR
mA
2
5
20
100
50IF
1
10
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
BAV19-BP
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
MCC
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