BAV756DW [LGE]
Surface Mount Fast Switching Diodes; 表面贴装快速开关二极管
| 型号： | BAV756DW |
| 厂家： | 
LGE |
| 描述： | Surface Mount Fast Switching Diodes |
| 文件： | 总2页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV756DW
Surface Mount Fast Switching Diodes
SOT-363
Features
Fast switching speed.
For general purpose switching application.
Ultra-small surface mount package.
High conductance.
Applications
Dimensions in inches and (millimeters)
For general purpose switching application.
Ordering Information
Type No.
Marking
KCA
Package Code
SOT-363
BAV756DW
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Characteristic
Value
Unit
VRM
Non-Repetitive Peak Reverse Voltage
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
VR
75
V
VR(RMS)
IF
RMS Reverse Voltage
53
V
Forward Countinuous Current
Average Rectified Output Current
300
150
V
IO
mA
A
Non-Repetitive Peak Forward Surge Current @t=1.0us
@t=1.0s
2.0
1.0
IFSM
PD
Power Dissipation
200
mW
℃/W
℃
RθJA
Tj,Tstg
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
625
-65 to+150
http://www.luguang.cn
mail:lge@luguang.cn
BAV756DW
Surface Mount Fast Switching Diodes
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V(BR)R
IR=2.5μA
75
V
VR=75V
2.5
μA
μA
μA
nA
VR=75V,Tj=150℃
VR=25V,Tj=150℃
VR=20V
50
Reverse voltage leakage current IR
30
25
IF=1.0mA
0.715
0.855
1.0
IF=10mA
Forward voltage
VF
V
IF=50mA
IF=150mA
1.25
2.0
Junction Capacitance
Reverse Recovery time
CJ
trr
VR=0V,f=1.0MHz
IF=IR=10mA,Irr=0.1*IR,
RL=100Ω
pF
ns
4.0
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
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Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
WTE
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