BTA41-1000 [LGE]

Discrete Traics (Isolated); 离散Traics (隔离)
BTA41-1000
型号: BTA41-1000
厂家: LGE    LGE
描述:

Discrete Traics (Isolated)
离散Traics (隔离)

文件: 总5页 (文件大小:1539K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BTA41-200 thru BTA41-1200  
Discrete Traics (Isolated)  
Unit:mm  
Inches  
Millimeter  
Dim.  
min  
max  
min  
max  
21.21  
16  
A
B
C
D
E
F
G
H
J
0.81  
0.61  
0.835  
0.63  
20.57  
15.49  
4.52  
1.4  
0.178  
0.055  
0.487  
0.635  
0.022  
0.075  
0.575  
0.211  
0.422  
0.058  
0.045  
0.095  
0.008  
0.008  
0.159  
0.085  
0.188  
0.07  
4.78  
1.78  
12.62  
16.64  
0.74  
2.41  
15.88  
5.56  
11.1  
1.72  
1.4  
2.92  
0.41  
0.41  
4.14  
2.42  
VDRM  
V
VDSM  
V
G
0.497  
0.655  
0.029  
0.095  
0.625  
0.219  
0.437  
0.068  
0.055  
0.115  
0.016  
0.016  
0.163  
0.095  
12.37  
16.13  
0.56  
1.91  
14.61  
5.36  
10.72  
1.47  
1.14  
2.41  
0.2  
T2  
BTA41-200  
BTA41-400  
BTA41-600  
BTA41-800  
200  
400  
600  
800  
220  
450  
700  
900  
T1  
K
L
T2  
M
N
P
O
R
U
W
BTA41-1000  
BTA41-1200  
1000  
1200  
1100  
1300  
0.2  
4.04  
2.17  
G
T1  
Symbol  
Test Conditions  
Maximum Ratings  
41  
Unit  
A
TVJ=80 o  
C
ITRMS  
TVJ=45oC  
VR=0  
TVJ=TVJM  
VR=0  
t=10ms (50Hz), sine  
420  
400  
350  
320  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
ITSM  
A
TVJ=45oC  
VR=0  
TVJ=TVJM  
VR=0  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
880  
850  
760  
720  
i2t  
A2s  
50  
TVJ=TVJM  
repetitive, IT=40A  
f=50Hz, tp=200us  
(di/dt) cr VD=2/3VDRM  
IG=0.3A  
A/us  
300  
500  
non repetitive, IT=ITAVM  
VDR=2/3VDRM  
diG/dt=0.3A/us  
TVJ=TVJM;  
(dv/dt) cr  
V/us  
W
RGK= ; method 1 (linear voltage rise)  
TVJ=TVJM  
PGM  
tp=30us  
tp=300us  
10  
5
IT=ITAVM  
1
W
V
PGAV  
VRGM  
10  
-40...+125  
125  
-40...+125  
TVJ  
TVJM  
Tstg  
oC  
VISOL  
Md  
50/60Hz, RMS  
t=1minute, leads-to-tab  
2500  
V~  
Mounting torque (M4)  
0.8...1.5  
6
Nm  
g
Weight  
http://www.luguang.cn  
mail:lge@luguang.cn  
BTA41-200 thru BTA41-1200  
Discrete Traics (Isolated)  
Symbol  
Test Conditions  
Characteristic Values  
Unit  
TVJ=TVJM; VD=VDRM  
IT=41A; TVJ=25oC  
For power-loss calculations only (TVJ=125oC)  
10  
1.44  
0.85  
10  
mA  
V
IR, ID  
VTM  
VTO  
rT  
V
m
1.3  
1.3  
1.3  
VD=6V; IT=1A;TVJ=25oC  
VGT  
V
1.5  
50  
50  
VD=6V; IT=1A;TVJ=25oC  
IGT  
mA  
V
50  
100  
0.2  
TVJ=TVJM;  
VD=2/3VDRM  
VGD  
10  
mA  
mA  
IGD  
TVJ=25oC; VD=6V; RGK=  
DC current  
100  
IH  
1.3  
K/W  
RthJC  
1.5  
50  
K/W  
m/s2  
RthJH  
a
DC current  
Max. acceleration, 50 Hz  
http://www.luguang.cn  
mail:lge@luguang.cn  
BTA41-200 thru BTA41-1200  
Discrete Traics (Isolated)  
Fig. 1: Maximum power dissipation versus RMS  
on-state current (full cycle).  
Fig. 2: RMS on-state current versus case  
temperature (full cycle).  
P (W)  
IT(RMS) (A)  
4 5  
50  
4 0  
α = 1 8˚0  
4 0  
3 0  
3 5  
3 0  
2 5  
2 0  
1 5  
1 0  
2 0  
1 8 ˚0  
α
α
1 0  
5
IT(RMS) (A)  
1 5 2 0 2 5  
Tc(°C)  
0
0
0
25  
50  
75  
1 0 0  
1 2 5  
0
5
1 0  
3 0  
3 5  
41  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
Fig. 4: On-state characteristics (maximum  
values).  
K=[Zth/Rth]  
1.E+00  
ITM (A)  
400  
Z th (j-c )  
T j m a x  
100  
1.E-01  
1.E-02  
T j= 2˚5C  
10  
Tj max.:  
Vto = 0.85 V  
Rd = 10 m  
VTM (V)  
tp (s)  
1
1.E-03  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03  
Fig. 6: Non-repetitive surge peak on-state  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
current for  
a
sinusoidal pulse with width  
tp < 10 ms, and corresponding value of I²t.  
ITSM (A), I²t (A²s)  
ITSM (A)  
450  
10000  
IT S M  
400  
t= 2 0 m  
s
d I/d t lim ita tio n :  
µs  
I²t  
350  
300  
250  
200  
150  
100  
50  
5 0 A /  
O
n e c y c le  
Non repetitive  
Tj initial=25°C  
1000  
R e p e titive  
T c = 7 0˚C  
Tj initial=25°C  
tp (ms)  
Number of c  
10  
ycles  
100  
100  
0.01  
0
0.10  
1.00  
10.00  
1
1000  
http://www.luguang.cn  
mail:lge@luguang.cn  
BTA41-200 thru BTA41-1200  
Discrete Traics (Isolated)  
Fig. 7: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
Fig. 8: Relative variation ofcritical rate ofdecrease  
of main current versus (dV/dt)c (typical values).  
,IH,IL [Tj=25°C]  
IGT,IH,IL[Tj] / IGT  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
2.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
IGT  
IH & IL  
0.6  
0.4  
(dV/dt)c (V/µs)  
1.0  
Tj(°C)  
40 60  
0.1  
10.0  
100.0  
-40 -20  
0
20  
80 100 120 140  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
6
5
4
3
2
1
Tj (°C)  
0
0
25  
50  
75  
100  
125  
http://www.luguang.cn  
mail:lge@luguang.cn  
BTA41-200 thru BTA41-1200  
Discrete Traics (Isolated)  
Symbol  
Test Conditions  
Characteristic Values  
Unit  
TVJ=TVJM; VD=VDRM  
IT=41A; TVJ=25oC  
For power-loss calculations only (TVJ=125oC)  
10  
1.44  
0.85  
10  
mA  
V
IR, ID  
VTM  
VTO  
rT  
V
m
1.3  
1.3  
1.3  
VD=6V; IT=1A;TVJ=25oC  
VGT  
V
1.5  
50  
50  
VD=6V; IT=1A;TVJ=25oC  
IGT  
mA  
V
50  
100  
0.2  
TVJ=TVJM;  
VD=2/3VDRM  
VGD  
10  
mA  
mA  
IGD  
TVJ=25oC; VD=6V; RGK=  
DC current  
100  
IH  
1.3  
K/W  
RthJC  
1.5  
50  
K/W  
m/s2  
RthJH  
a
DC current  
Max. acceleration, 50 Hz  
http://www.luguang.cn  
mail:lge@luguang.cn  

相关型号:

BTA41-1200

Discrete Traics (Isolated)
LGE

BTA41-200

Discrete Traics (Isolated)
LGE

BTA41-200A

TRIAC|200V V(DRM)|40A I(T)RMS|TO-218
ETC

BTA41-200B

TRIAC|200V V(DRM)|40A I(T)RMS|TO-218
ETC

BTA41-400

STANDARD TRIACS
STMICROELECTR

BTA41-400

Discrete Traics (Isolated)
LGE

BTA41-400A

TRIAC|600V V(DRM)|40A I(T)RMS|TO-218
ETC

BTA41-400B

STANDARD TRIACS
STMICROELECTR

BTA41-600

40A TRIACS
STMICROELECTR

BTA41-600

Discrete Traics (Isolated)
LGE

BTA41-600A

TRIAC|600V V(DRM)|40A I(T)RMS|TO-218
ETC

BTA41-600B

40A TRIACS
STMICROELECTR