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BTB04-600T [LGE]

SENSITIVE GATE TRIACS; 敏感的双向可控硅门
BTB04-600T
型号： BTB04-600T
厂家： LGE    LGE
描述：

SENSITIVE GATE TRIACS
敏感的双向可控硅门

可控硅 三端双向交流开关
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中文：  中文翻译
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BTA04 T/D/S/A  
BTB04 T/D/S/A  
SENSITIVE GATE TRIACS  
TO-220AB  
FEATURES  
■
■
■
Very low IGT = 10mA max  
Low IH = 15mA max  
BTA Family:  
Insulating voltage = 2500V(RMS)  
(UL recognized: E81734)  
DESCRIPTION  
The BTA/BTB04 T/D/S/A triac family are high per-  
formance glass passivated PNPN devices.  
These parts are suitables for general purpose ap-  
plications where gate high sensitivity is required.  
Application on 4Q such as phase control and static  
switching.  
Dimensions in inches and (millimeters)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
IT(RMS)  
RMS on-state current (360° conduction angle)  
BTA  
BTB  
Tc = 90°C  
Tc = 95°C  
tp = 8.3ms  
tp = 10ms  
tp = 10ms  
4
A
ITSM  
Non repetitive surge peak on-state current  
(Tj initial = 25°C)  
42  
40  
8
A
I2t  
I2t value  
A2s  
dI/dt  
Critical rate of rise of on-state current  
Gate supply: IG = 50mA dIG/dt = 0.1A/µs  
Repetitive  
F = 50Hz  
10  
A/µs  
Non repetitive  
50  
Tstg  
Tj  
Storage and operating junction temperature range  
-40 to +150  
-40 to +110  
°C  
°C  
Tl  
Maximum lead soldering temperature during 10s at 4.5mm from case  
260  
BTA / BTB04-  
Symbol  
Parameter  
Unit  
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A  
VDRM  
VRRM  
400  
600  
700  
V
Repetitive peak off-state voltage Tj = 110°C  
http://www.luguang.cn  
Email:lge@luguang.cn  
BTA04 T/D/S/A  
BTB04 T/D/S/A  
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
60  
Unit  
Rth (j-a)  
Junction to ambient  
°C/W  
Rth (j-c) DC Junction to case for DC  
BTA  
BTB  
BTA  
BTB  
4.4  
°C/W  
3.2  
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz)  
3.3  
°C/W  
2.4  
GATE CHARACTERISTICS (maximum values)  
P
G(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs)  
ELECTRICAL CHARACTERISTICS  
BTA / BTB04  
Symbol  
Test conditions  
Quadrant  
Unit  
T
5
5
D
5
S
A
IGT  
VD = 12V (DC) RL = 33Ω  
Tj = 25°C  
I - II - III  
IV  
MAX.  
MAX.  
MAX.  
MIN.  
10  
10  
10  
25  
mA  
10  
VGT  
VGD  
tgt  
VD = 12V (DC) RL = 33Ω  
Tj = 25°C  
Tj =110°C  
Tj = 25°C  
I - II - III - IV  
I - II - III - IV  
I - II - III - IV  
1.5  
0.2  
2
V
V
VD = VDRM  
RL = 3.3kΩ  
VD = VDRM IG = 40mA  
dIG/dt = 0.5A/µs  
TYP.  
µs  
IL  
IG = 1.2IGT  
Tj = 25°C  
I - III - IV  
II  
TYP.  
10  
20  
15  
10  
20  
15  
20  
40  
25  
20  
40  
25  
mA  
IH*  
IT = 100mA Gate open  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 110°C  
Tj = 110°C  
MAX.  
MAX.  
MAX.  
MAX.  
TYP.  
MIN.  
mA  
V
VTM  
*
ITM = 5.5A  
VDRM rated  
tp = 380µs  
1.65  
0.01  
0.75  
IDRM  
IRRM  
mA  
V
RRM rated  
dV/dt *  
Linear slope up to  
VD = 67% VDRM gate open  
10  
-
10  
-
-
-
V/µs  
10  
5
10  
5
(dI/dt)c* (dI/dt)c = 1.8A/ms  
Tj = 110°C  
TYP.  
1
1
V/µs  
* For either polarity of electrode A2 voltage with reference to electrode A1  
http://www.luguang.cn  
Email:lge@luguang.cn  
BTA04 T/D/S/A  
BTB04 T/D/S/A  
PRODUCT INFORMATION  
IT(RMS)  
VDRM / VRRM  
Sensitivity Specification  
Package  
A
V
T
X
X
X
X
X
D
X
X
S
A
BTA  
4
400  
600  
700  
400  
600  
X
(Insulated)  
X
X
BTB  
(Uninsulated)  
ORDERING INFORMATION  
BT A 04 - 400 T  
Triac  
Series  
Sensitivity  
Insulation:  
A: insulated  
Voltage:  
B: non insulated  
400: 400V  
600: 600V  
700: 700V  
Current: 04A  
http://www.luguang.cn  
Email:lge@luguang.cn  
BTA04 T/D/S/A  
BTB04 T/D/S/A  
Fig. 1: Maximum RMS power dissipation versus  
RMS on-state current (F = 50Hz).(Curves are cut  
off by (dI/dt)c limitation)  
Fig. 2: Correlation between maximum RMS power  
dissipation and maximum allowable temperature  
(Tamb and Tcase) for different thermal resistances  
heatsink + contact (BTA).  
Fig. 3: Correlation between maximum RMS power  
dissipation and maximum allowable temperature  
(Tamb and Tcase) for different thermal resistances  
heatsink + contact (BTB).  
Fig. 4: RMS on-state current versus case temper-  
ature.  
Fig. 6: Relative variation of gate trigger current  
and holding current versus junction temperature.  
Fig. 5: Relative variation of thermal impedance  
versus pulse duration.  
Zth/Rth  
1
Zth(j-c)  
0.1  
Zth(j-a)  
tp(s)  
1E+2 5E+2  
0.01  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
http://www.luguang.cn  
Email:lge@luguang.cn  
BTA04 T/D/S/A  
BTB04 T/D/S/A  
Fig. 7: Non repetitive surge peak on-state current  
versus number of cycles.  
Fig. 8: Non repetitive surge peak on-state current  
for a sinusoidal pulse with width: t ≤ 10ms, and cor-  
responding value of I2t.  
Fig. 9: On-state characteristics (maximum values).  
http://www.luguang.cn  
Email:lge@luguang.cn  

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