BY458 [LGE]
Standard Avalanche Sinterglass Diode; 标准的雪崩二极管Sinterglass
| 型号： | BY458 |
| 厂家： | 
LGE |
| 描述： | Standard Avalanche Sinterglass Diode |
| 文件： | 总3页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BY448/BY458
Standard Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
e2
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High voltage rectification diode
949539
Efficiency diode in horizontal deflection circuits
Polarity: Color band denotes cathode end
Mounting Position: Any
Mechanical Data
Case: SOD-57 Sintered glass case
Weight: approx. 369 mg
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Parts Table
Part
Type differentiation
Package
BY448
BY458
VR = 1500 V; IFAV = 2 A
VR = 1200 V; IFAV = 2 A
SOD-57
SOD-57
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
V
Reverse voltage
see electrical characteristics
BY448
VR = VRRM
VR = VRRM
IFSM
1500
BY458
1200
V
A
Peak forward surge current
Average forward current
Junction temperature
tp = 10 ms, half sinewave
30
IFAV
2
140
A
Tj
°C
°C
mJ
Storage temperature range
Tstg
- 55 to + 175
10
Non repetitive reverse
avalanche energy
I(BR)R = 0.4 A
ER
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
RthJA
45
K/W
K/W
on PC board with spacing
25 mm
100
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mail:lge@luguang.cn
BY448/BY458
Standard Avalanche Sinterglass Diode
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VF
Min
Typ.
Max
1.6
Unit
V
Forward voltage
Reverse current
IF = 3 A
VR = VRRM
R = VRRM, Tj = 140 °C
IR
IR
trr
trr
3
140
20
2
µA
µA
µs
µs
V
Total reverse recovery time
Reverse recovery time
IF = 1 A, - diF/dt = 0.05 A/µs
IF = 0.5 A, IR = 1 A, iR = 0,25 A
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
l
l
2.5
2.0
1.5
1.0
0.5
0
V
= V
RRM
R
100
80
half sinewave
R
= 45 K/W
thJA
l = 10 mm
T = constant
L
60
40
20
0
R
= 100 K/W
thJA
PCB: d = 25 mm
30
0
25 50
75
100
125
150
0
5
10
15
20
25
T
amb
- Ambient Temperature (°C )
l - Lead Length ( mm )
94 9101
16418
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
100
V
= V
RRM
R
T
j
150
C
=
°
10
1
100
10
1
T =25
j
C
°
0.1
0.01
0.001
25
50
75
100
125
150
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
- Forward V oltage ( V )
16417
V
16419
T - Junction T emperature (°C )
F
j
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
http://www.luguang.cn
mail:lge@luguang.cn
BY448/BY458
Standard Avalanche Sinterglass Diode
400
350
300
250
200
150
100
50
35
V
= V
RRM
R
f= 1 MHz
30
25
20
15
10
5
P
-Limit
R
@100 % V
R
P
R
-Limit
@80 % V
R
0
0
0.1
1
10
V - Reverse Voltage ( V )
R
100
25
50
75
100
125
150
16420
T - Junction Temperature (°C )
j
16421
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
3.6 (0.140)max.
94 9538
Sintered Glass Case
SOD-57
Cathode Identification
ISO Method E
0.82 (0.032) max.
26(1.014) min.
26(1.014) min.
4.0 (0.156) max.
http://www.luguang.cn
mail:lge@luguang.cn
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