BZX85C56(G) [LGE]
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| 型号： | BZX85C56(G) |
| 厂家： | 
LGE |
| 描述： | 暂无描述 |
| 文件： | 总5页 (文件大小：2356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX85C SERIES
1.3 Watts Zener Diode
DO-41
Features
Silicon Planar Power Zener Diodes
For use in stabilizing and clipping circuits with
high power rating
The Zener voltages are graded according to
the international E24 standard. Replace suffix
“C”
Mechanical Data
Case: Molded plastic DO-41
Polarity: Color band denotes cathode end
Mounting position: Any
Dimensions in inches and (millimeters)
Weight: 0.35 grams (approx.)
Maximum Ratings and Electrical Characteristics
Rating at 25oCambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Value
1.3
130
Units
W
OC /W
OC
TJ, TSTG
-55 to + 175
Notes: 1. Measured with pulses tp=5ms
2. Valid Provided that Lead are Kept at Ambient Temperature at a distance of
10 mm from case..
3. f = 1KHz.
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
BZX85C SERIES
1.3 Watts Zener Diode
RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES)
FIG.1- PULSE THERMAL RESISTANCE VS
PULSE DURATION
FIG.2- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.3- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.4- THERMAL RESISTANCE VS LEAD LENGTH
FIG.6- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.5- ADMISSIBLE POWER DISSIPATION VS
AMBIENT TEMPERATURE
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
BZX85C SERIES
1.3 Watts Zener Diode
RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES)
FIG.7- BREAKDOWN CHARACTERISTICS
FIG.8- BREAKDOWN CHARACTERISTICS
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
BZX85C SERIES
1.3 Watts Zener Diode
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
Temperature
Coefficient of
Zener Voltage
Zener Voltage
Range (Note 1)
Dynamic Resistance
Admissible
Reverse Leakage
Current
Zener
Current
(Note 2)
IZ
Device
V @ IZ= IZT
IZK
Vz @ Izt
V
fZT
(Note 3)
IZT
fZT
(Note 3)
Ohms
Z
% /OC
IR
VR
V
Min
2.5
2.8
3.1
3.4
3.7
4
Max
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6
Ohm
<20
<20
<20
<20
<15
<13
<13
<10
<7
mA
80
80
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
mA
1
Min
Max
uA
<150
<100
<40
<20
<10
<3
mA
360
BZX85C2V7
BZX85C3V0
BZX85C3V3
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
BZX85C5V1
BZX85C5V6
BZX85C6V2
BZX85C6V8
BZX85C7V5
BZX85C8V2
BZX85C9V1
BZX85C10
BZX85C11
BZX85C12
BZX85C13
BZX85C15
BZX85C16
BZX85C18
BZX85C20
BZX85C22
BZX85C24
BZX85C27
BZX85C30
BZX85C33
BZX85C36
BZX85C39
BZX85C43
BZX85C47
BZX85C51
BZX85C56
<400
<400
<400
<500
<500
<500
<600
<500
<400
<300
<300
<200
<200
<200
<200
<300
<350
<400
<500
<500
<500
<600
<600
<600
<750
<1000
<1000
<1000
<1000
<1000
<1500
<1500
<2000
-0.08 -0.05
-0.08 -0.05
-0.08 -0.05
-0.08 -0.05
-0.07 -0.02
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
3.0
4.0
4.5
6.2
6.8
7.5
8.2
9.1
10
1
330
1
300
1
290
1
280
1
-0.05
-0.03
-0.01
0
0.01
0.04
250
4.4
4.8
5.2
5.8
6.4
7
1
<3
215.0
200.0
190.0
170.0
155.0
140.0
130.0
120.0
105.0
97.0
88.0
79.0
71.0
66.0
62.0
56.0
52.0
47.0
41.0
36.0
33.0
30.0
28.0
26.0
23.0
21.0
19.0
1
0.04
<1
1
0.045
<1
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
<4
1
0.01 0.055
0.015 0.06
0.02 0.065
<1
<3.5
<3
1
<1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
<1
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
<5
0.03
0.035 0.075
0.04 0.08
0.07
<1
<5
<1
<7
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<8
0.045 0.08
0.045 0.085
0.05 0.085
0.055 0.09
0.055 0.09
<9
<10
<15
<15
<20
<24
<25
<25
<30
<30
<35
<40
<50
<50
<90
<115
<120
11
12
0.06
0.06
0.09
0.09
13
15
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
0.06 0.095
16
18
20
8
22
31
35
8
24
34
38
8
27
37
41
6
30
40
46
6
33
44
50
4
36
48
54
4
39
52
60
4
43
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
BZX85C SERIES
1.3 Watts Zener Diode
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
Temperature
Zener Voltage
Range (Note 1)
Dynamic Resistance
Admissible
Coefficient of Reverse Leakage Zener
Device
Zener Voltage
Current
Current
(Note 2)
IZ
V @ IZ= IZT
IZK
Vz @ Izt
V
fZT
(Note 3)
IZT
fZT
(Note 3)
Ohms
Z
% /OC
IR
VR
V
Min
58
Max
66
Ohm
<125
<130
<135
<200
<250
<350
<450
<550
<700
<1000
<1100
<1200
<1500
mA
4.0
4.0
4.0
2.7
2.7
2.7
2.7
2.0
2.0
2.0
1.5
1.5
1.5
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Min
Max
uA
mA
16
BZX85C62
BZX85C68
BZX85C75
BZX85C82
BZX85C91
BZX85C100
BZX85C110
BZX85C120
BZX85C130
BZX85C150
BZX85C160
BZX85C180
BZX85C200
<2000
<2000
<2000
<3000
<3000
<3000
<4000
<4500
<5000
<6000
<6500
<7000
<8000
0.06
0.095
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
47
51
64
72
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
0.055 0.095
15
70
80
56
14
77
87
62
12
85
96
68
10
96
106
116
127
141
156
171
191
212
75
9.4
8.6
7.8
7.0
6.4
5.8
5.2
4.7
104
114
124
138
153
168
188
82
91
100
110
120
130
150
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
CARTON
SPQ/PCS
CARTON
SIZE/CM
CARTON
GW/KG
CARTON
NW/KG
PACKAGE
DO-41
SPQ/PCS
5000/AMMO
50000
42X28X31
14.00
12.00
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
相关型号：
BZX85C56P
DIODE 56 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, DO-41G, 2 PIN, Voltage Regulator Diode
MCC
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