EDB106S [LGE]
Silicon Bridge Rectifiers; 硅桥式整流器
| 型号： | EDB106S |
| 厂家： | 
LGE |
| 描述： | Silicon Bridge Rectifiers |
| 文件： | 总2页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDB101S-EDB106S
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
Features
DB-S
Rating to 400 V PRV
1± 0.1
7.9± 0.2
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
6.4± 0.1
1.2± 0.3
10± 0.6
Reliable low cost construction utilizing molded
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
8.3± 0.1
5± 0.2
Plastic material has UL flammability classification
94V-O
Polaritysymbols molded on body
Weight: 1.0 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EDB
101S
EDB
102S
EDB
103S
EDB
104S
EDB
105S
EDB
106S
UNITS
V
V
V
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forw ard
100
A
1.0
IF(AV)
Output current
@TA=55
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
A
V
IFSM
30.0
Maximum instantaneous forw ard voltage
at 1.0 A
1.0
VF
IR
A
Maximum reverse current
@TA=25
10.0
1.0
50
μ
mA
nS
pF
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (NOTE1)
trr
CJ
Typical junction calacitance
(NOTE2)
15
10
Operating junction temperature range
- 55 ---- + 150
TJ
Storage temperature range
- 55 ---- + 150
TSTG
NOTE: 1. Test conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts.
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mail:lge@luguang.cn
EDB101S-EDB106S
Silicon Bridge Rectifiers
Ratings AND Charactieristic Curves
FIG.2 -- TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
2
Single phaes
half wave 60Hz
resistive or
50
10
trr
N 1.
N 1.
inductive load
+0.5A
D.U.T.
1
0
(+)
PULSE
25VDC
(approx)
(-)
GENERATOR
(NOTE2)
-0.25A
OSCILLOSCOPE
(NOTE1)
1
NONIN-
DUCTIVE
0
-1.0A
0
25
50
75
100
125
150
1cm
NOTES:1.RISE TIME =7ns MAX. INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5OΩ
SET TIMEBASEFOR
10 ns /cm
AMBIENT TEMPERATURE (
)
FIG.3 -- TYPICAL REVERSE CHARACTERISTICS
FIG.4 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
10
TJ=150
10
1.0
TJ=100
1.0
0.1
.01
TJ=25
0.1
PJulse W idth
=300u S
T
=125
.01
.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
FIG.6 -- TYPICAL JUNCTION CAPACITANCE
60
200
TJ=25
100
50
60
40
8.3ms Single Half Sine Wave
40
TJ=25
20
EDB101S-EDB104S
30
20
10
0
10
6
EDB105S-EDB106S
4
2
1
.1
1
4
10
100
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
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mail:lge@luguang.cn
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