HER840T [LGE]

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HER840T
型号: HER840T
厂家: LGE    LGE
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HER810T-HER860T  
High Efficiency Rectifiers  
VOLTAGE RANGE: 100 --- 600 V  
CURRENT: 8.0 A  
TO - 220AC  
Features  
4.5± 0.2  
10.2± 0.2  
Low cost  
1.4± 0.2  
Low leakage  
φ 3.8± 0.15  
Low forward voltage drop  
High current capability  
Easilycleaned with alcohol,Isopropanol  
and similar solvents  
PIN  
2
1
2.6± 0.2  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
0.9± 0.1  
Case:JEDEC TO-220AC,molded plastic body  
Polarity: As marked  
0.5± 0.1  
5.0± 0.1  
Weight: 0.064 ounces,1.96 gram  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
HER  
810T  
HER  
820T  
HER  
840T  
HER  
860T  
UNITS  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
V
V
V
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
100  
MaximumDC blocking voltage  
Maximumaverage forw ard rectified current  
@TC=75  
8.0  
A
IF(AV)  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
IFSM  
200  
A
Maximuminstantaneous forw ard voltage  
1.0  
1.3  
1.7  
VF  
IR  
V
A
@ 8.0A  
10  
Maximumreverse current  
@TA=25  
150  
at rated DC blocking voltage @TA=100  
Maximumreverse recovery time (Note1)  
ns  
pF  
/W  
trr  
CJ  
R
50  
100  
Typical junction capacitance  
(Note2)  
40  
25  
Typical thermal resistance  
(Note3)  
JC  
θ
- 55 ---- + 150  
- 55 ---- + 150  
Operating junction temperature range  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.  
3.Thermal resistance junction to ambient.  
http://www.lgesemi .com  
mail:lge@lgesemi.com  
Revision:20170701-P1  
HER810T-HER860T  
High Efficiency Rectifiers  
Ratings AND Charactieristic Curves  
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC  
trr  
50  
10  
N 1.  
N 1.  
+0.5A  
D.U.T.  
0
(+)  
PULSE  
GENERATOR  
(NOTE2)  
-0.25A  
50VDC  
(approx)  
(-)  
OSCILLOSCOPE  
(NOTE 1)  
1
NONIN-  
DUCTIVE  
-1.0A  
1cm  
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.  
SET TIME BASE FOR 20/45 ns/cm  
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50  
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC  
FIG.3 -- FORWARD DERATING CURVE  
z
10  
100  
8
6
4
2
0
400V  
TJ=25  
Pulse Width=300µS  
10  
100\200  
600V  
1
0.1  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
25  
50  
75  
100  
125  
150  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
CASE TEMPERATURE,  
FIG.4 -- TYPICAL JUNCTION CAPACITANCE  
FIG.5 -- PEAK FORWARD SURGE CURRENT  
1000  
200  
150  
600  
400  
TJ=125  
8.3ms Single Half  
Sine-Wave  
200  
100  
100  
50  
0
40  
TJ=25  
f=1MHz  
20  
1
2
4
8
10 20  
40 60 100  
10  
.1 .2  
.4  
1.0  
2
4
10 20  
40  
100  
REVERSE VOLTAGE,VOLTS  
NUMBER OF CYCLES AT 60Hz  
http://www.lgesemi .com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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