MA64 [LGE]

VOLTAGE RANGE: 28-45 V; 电压范围: 28-45 V
MA64
型号: MA64
厂家: LGE    LGE
描述:

VOLTAGE RANGE: 28-45 V
电压范围: 28-45 V

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MA64  
Silicon Bidirectional Diacs  
VOLTAGE RANGE: 28-45 V  
DO-35  
Features  
The three layer,two termnal,axial lead,hermetically  
1111sealed diacs are designed specificallyfor triggering  
1111thyristors.They demonstrate low breakover current at  
1111breakover voltage as theywithstand peak pulse  
1111current,The breakover symmetry is within three  
1111volts(MA64). These diacs are intended for use in  
CCCthyrisitors phase control,circuits for lamp dimming,  
FFFI universal motor speed control,and heat control.  
Dimensions in inches and (millimeters)  
MA64  
ABSOLUTE RATINGS  
Parameters  
Symbols  
UNITS  
Power dissipation on printed  
TA=50oC circuit (L=10mm)  
Pc  
150.0  
2.0  
mW  
A
Repetitive peak on-state  
current  
tp=20  
f=120Hz  
S
ITRM  
oC  
oC  
Operating junction temperature  
Storage temperature  
TJ  
-40--- +125  
-40--- +125  
TSTG  
ELECTRICAL CHARACTERISTICS  
Parameters  
Test Conditions  
MA64  
UNITS  
V
Min  
Typ  
Max  
28  
32  
36  
C=22nf(NOTE2)  
See FIG.1  
Breakover voltage (NOTE1)  
VBO  
I+VBO I-  
I-VBOI  
C=22nf(NOTE2)  
See FIG.1  
±3.0  
V
V
Breakover voltage symmetry  
Max  
Min  
I=(IBO to IF=10mA)  
See FIG.1  
Dynamic breakover voltage (NOTE1)  
Output voltage (NOTE1)  
I± VI  
5.0  
5.0  
See FIG.2  
Vo  
IBO  
tr  
Min  
Max  
Typ  
Max  
V
A
S
A
C=22nf(NOTE2)  
See FIG.3  
100.0  
1.5  
Breakover current (NOTE1)  
Rise time (NOTE1)  
VR=0.5 VBO  
See FIG.1  
10.0  
Leakage current (NOTE1)  
IR  
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.  
2.Connected in parallel w ith the devices  
MA64  
Silicon Bidirectional Diacs  
Ratings and Characteristic Curves  
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE  
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE  
+IF  
10mA  
10KΩ  
500KΩ  
D.U.T  
IBO  
IB  
220V  
60Hz  
R=20Ω  
Vo  
-V  
+V  
0.1µ F  
0.5VBO  
V
VBO  
-IF  
FIG.4--POWER DISSIPATION VERSUS AMBIENT  
TEMPERATURE (MAXIMUM VALUES)  
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A  
P(mW)  
160  
140  
120  
90%  
IP  
100  
80  
60  
40  
10%  
20  
Tamb( )  
tr  
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION  
TEMPERATURE(TYPICAL VALUES)  
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS  
PULSE DURATION(MAXIMUM VALUES)  
ITRM(A)  
VBO(TJ)  
VBO(TJ=25  
)
1.08  
1.06  
2
1
f=100Hz  
TJ(  
)
TJ initial=25℃  
1.04  
0.1  
tp(µ s)  
1.02  
1.00  
0.01  
10  
100  
1000  
10000  
25  
50  
75  
100  
125  

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