MB4F [LGE]
Silicon Bridge Rectifiers; 硅桥式整流器型号: | MB4F |
厂家: | LGE |
描述: | Silicon Bridge Rectifiers |
文件: | 总2页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MB05F-MB10F
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 0.5 A
MBF
Features
This series is UL recognized under Component Index,
4.8±0.2
file number E239431
Glass passivated chip junctions
Plastic materrial has U/L flammabilityclassification
94V-O
High surge overload rating: 25A peak
Saves space on printed circuit boards
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.0kg) tension
3.8±0.2
0.6±0.1
2.5±0.25
Mechanical Data
1.0±0.15
6.8±0.2
0.3±0.1
Case: Molded plastic bodyover passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polaritysymbols marked on body
Dimensions in inches and (millimeters)
Mounting Position: Any
Dimensions in millimeters
Weight: 0.0078 ounce, 0.22 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
ambient temperature unless otherwise specified.
MB05F MB1F MB2F MB4F MB6F MB8F MB10F
UNITS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
1000
Maximum DC blocking voltage
Maximum average forw ard
A
IF(AV)
0.5
output current
@TA=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
IFSM
A
V
25
Maximum instantaneous forw ard voltage
@ 0.4 A
VF
1.0
A
Maximum reverse current
@TA=25
5.0
0.5
13
μ
IR
mA
pF
at rated DC blocking voltage @TA=100
Typical junction capacitance per leg (NOTE 3)
CJ
Typical thermal resistance per leg (NOTE 1)
(NOTE 2)
R θJA
RθJL
85
20
/W
Operating junction temperature range
Storage temperature range
- 55 ---- + 150
TJ
TSTG
- 55 ---- + 150
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
(3) Measured at 1.0 MHz and applied reverse v oltage of 4.0 Volts
MB05F-MB10F
Silicon Bridge Rectifiers
Ratings AND Charactieristic Curves
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT PER LEG
FIG.1 -- DERATING CURVE FOR OUTPUT
RRECTIFIED CURRENT
35
TA=40
SINGLE HALF SINE-WAVE
30
0.8
(JEDEC Method)
Aluminum Substrate
25
20
0.7
GLASS
EPOXY
f=60Hz
0.6
P.C.B.
15
0.5
0.4
0.3
f=50Hz
10
1.0 CYCLE
5.0
0.2
0
1
10
100
0.1
RESISTIVE OR INDUCTIVE LOAD
0
0
30
60
90
120
150
NUMBER OF CYCLES AT 50/60Hz
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
TJ=125
10
FIG.3 -- TYPICAL FORWARD VOLTAGE
KKKKCHARACTERISTICS PER LEG
1.0
0.1
TJ=25
10
.01
0
20
40
60
80
100
1
TJ=25
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0.1
PULSE WIDTH=300µS
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER
BBBBBBB ELEMENT
0.01
0.2 0.4 0.6
100
0.8 1.0
1.2 1.4
60
f=1MHz
TJ=25
40
20
10
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
4
2
1
.1 .2
.4
1.0
2
4
10 20 40
100
REVERSE VOLTAGE, VOLTS
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