MBR10100CT [LGE]
10.0AMP. Schottky Barrier Rectifiers; 10.0AMP 。肖特基势垒整流器型号: | MBR10100CT |
厂家: | LGE |
描述: | 10.0AMP. Schottky Barrier Rectifiers |
文件: | 总2页 (文件大小:207K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR1035CT-MBR10200CT
10.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
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Plastic material used carries Underwriters
Laboratory Classifications 94V-0
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Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
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High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: JEDEC TO-220AB molded plastic body
Polarity: As marked
Dimensions in inches and (millimeters)
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR MBR
1035 1045 1050 1060 1090 10100 10150 10200
Type Number
Symbol
Units
CT
35
24
35
CT
CT
CT
CT
CT
CT
CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
I(AV)
IFRM
IFSM
IRRM
45 50 60 90 100 150 200
31 35 42 63 70 105 140
45 50 60 90 100 150 200
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
10
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
32
A
120
A
A
1.0
0.5
0.88
0.78
0.98
0.88
(Note 2)
IF=5A, TC=25oC
IF=5A, TC=125oC
IF=10A, TC=25oC
IF=10A, TC=125oC
0.70
0.80
0.85
0.75
0.95
0.85
VF
0.57
0.80
0.67
0.65
0.90
0.75
V
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage
IR
0.1
mA
mA
@ Tc=125 oC
(Note 2)
15
10
2.0
Voltage Rate of Change (Rated VR)
dV/dt
10,000
1.5
V/uS
oC/W
Maximum Typical Thermal Resistance (Note 3)
R
θJC
TJ
TSTG
-65 to +150
-65 to +175
oC
oC
Operating Junction Temperature Range
Storage Temperature Range
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
Notes:
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
http://www.luguang.cn
mail:lge@luguang.cn
MBR1035CT-MBR10200CT
10.0AMP. Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES (MBR1035CT THRU MBR10200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
6
5
180
150
120
90
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
4
3
60
2
1
0
30
0
1
10
100
0
50
100
150
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
200
100
50
10
MBR1035CT-1045CT
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
50
Tj=1250C
MBR1050CT-1060CT
1
10
5
MBR1050CT-1060CT
Tj=750C
MBR1090CT-10100CT
0.1
1
MBR1035CT-1045CT
0.01
MBR1090CT-10200CT
Tj=250C
MBR10150CT-10200CT
0.001
0
20
40
60
80
100
120
140
0.1
0
0.2
0.4
0.6
FORWARD VOLTAGE. (V)
0.8
1.0
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
10.0
1
5,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
500
0.1
0.01
100
0.1
0.1
1
10
100
1.0
10
REVERSE VOLTAGE. (V)
100
T, PULSE DURATION. (sec)
http://www.luguang.cn
mail:lge@luguang.cn
相关型号:
MBR10100CT-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3
SENSITRON
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