MBR10150BCT [LGE]
10A Surface Mount High Power Schottky Barrier Rectifiers;型号: | MBR10150BCT |
厂家: | LGE |
描述: | 10A Surface Mount High Power Schottky Barrier Rectifiers |
文件: | 总3页 (文件大小:957K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR1040BCT THRU MBR10200BCT
10A Surface Mount High Power Schottky Barrier Rectifiers
■ Features
■ Outline
D2PAK(TO-263)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
0.411(10.45)
0.380(9.65)
0.055(1.40)
0.190(4.83)
0.245(6.22)
•Silicon epitaxial planar chip, metal silicon junction.
0.031(0.80)
0.160(4.06)
MIN
•
Suffix "H" indicates Halogen-free part, ex.MBR1040BCTH. Lead-
f•ree parts meet environmental standards of
MIL-STD-19500 /228
0.055(1.40)
0.045(1.14)
2
0.370(9.40)
0.320(8.13)
Marking code
0~0.012(0~0.30)
1
3
0.110(2.79)
0.090(2.29)
0.228(5.80)
0.173(4.40)
■ Mechanical data
0.063(1.60)
0.024(0.60)
• Epoxy : UL94-V0 rated flame retardant.
• Case : Molded plastic, TO-263 / D2PAK
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.024(0.60)
0.011(0.28)
0.205(5.20)
0.189(4.80)
PIN 1
PIN 3
PIN 2
• Polarity: Indicated by cathode band.
• Mounting Position : Any.
Dimensions in inches and (millimeters)
• Weight : Approximated 1.70 gram.
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Conditions
Symbol
IO
MIN.
TYP.
MAX.
10
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current
IFSM
125
A
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
0.1
10
IR
Reverse current
mA
CJ
Diode junction capacitance
Thermal resistance
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
150
30
pF
OC/W
OC
RθJA
TSTG
Storage temperature
-55
+175
Max.
Max.
Max.
Max.
RMS voltage
VRMS (V)
Max. DC
blocking voltage
VR (V)
Operating
temperature
TJ (OC)
forward voltage
@5A, TA = 25OC
VF (V)
forward voltage
@5A, TA = 125OC
VF (V)
repetitive peak
reverse voltage
VRRM (V)
Symbol
Marking code
MBR1040BCT
MBR1045BCT
MBR1060BCT
MBR1065BCT
MBR1040BCT
MBR1045BCT
MBR1060BCT
MBR1065BCT
40
45
28
31.5
42
40
45
0.70
0.79
0.57
0.70
60
60
-55 ~ +150
-55 ~ +175
65
45.5
70
65
MBR10100BCT MBR10100BCT
MBR10150BCT MBR10150BCT
MBR10200BCT MBR10200BCT
100
150
200
100
150
200
0.81
0.87
0.90
0.71
0.77
0.80
105
140
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
MBR1040BCT THRU MBR10200BCT
10A Surface Mount High Power Schottky Barrier Rectifiers
■ Rating and characteristic curves
Fig. 2 - Maximum Non-Repetitive Peak
Fig.1 - Forward Current Derating Curve
Forward Surge Current
150
125
100
12
RESISTIVE OR INDUCTIVE LOAD
10
8.0
MBR1040BCT~MBR10100BCT
75
50
25
0
6.0
4.0
2.0
MBRB10150CT~MBRB10200CT
single phase half wave 60Hz
resistive or inductive load
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature ( OC)
Number of Cycles at 60 Hz
Fig. 3.1 - Typical Instantaneous Forward
Characteristics
Fig. 3.2 - Typical Instantaneous Forward
Characteristics
50
10
50
10
MBR1040BCT
MBR10100BCT
TJ=125OC
TJ=125OC
1
MBR1060BCT
1.0
0.5
0.1
TJ=25OC
TJ=25OC
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (Volts)
Instantaneous Forward Voltage (Volts)
Fig. 3.3 - Typical Instantaneous Forward
Characteristics
Fig. 4 - Typical Reverse Characteristics
100
10
1
100
10
MBR10150BCT
MBR10200BCT
TJ=150OC
TJ=125OC
1
0.1
TJ=125OC
TJ=75OC
TJ=25OC
0.01
0.001
0.0001
TJ=25OC
0
10
20
30
40
50
60
70
80 90 100
0
0.2
0.4
0.6
0.8
1.0
1.2
Percent of Rated Peak Reverse Voltage ( %)
Instantaneous Forward Voltage (Volts)
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P2
MBR1040BCT THRU MBR10200BCT
10A Surface Mount High Power Schottky Barrier Rectifiers
■ D2PAK(TO-263) foot print
A
G
B
C
F
D
E
A
B
C
D
E
F
G
0.425 (10.80) 0.665 (16.90) 0.374 (9.50) 0.071 (1.80) 0.098 (2.50) 0.138 (3.50) 0.449 (11.40)
Dimensions in inches and (millimeters)
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P3
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