MBR3090CT [LGE]
30.0AMP. Schottky Barrier Rectifiers; 30.0AMP 。肖特基势垒整流器型号: | MBR3090CT |
厂家: | LGE |
描述: | 30.0AMP. Schottky Barrier Rectifiers |
文件: | 总2页 (文件大小:247K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR3035CT-MBR30150CT
30.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
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o
260 C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: JEDEC TO-220AB molded plastic
Polarity: As marked
Dimensions in inches and (millimeters)
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR
3035 3045 3050 3060 3090 30100 30150
Symbol
Type Number
Units
CT
CT
CT
CT
CT
CT
CT
35
45
50
60
90
100
150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
24
35
31
45
35
50
42
60
63
90
70
105
150
100
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
o
I(AV)
IFRM
IFSM
IRRM
30
30
A
A
T =130 C
C
Peak Repetitive Forward Current (Rated VR, Square
o
Wave, 20KHz) at Tc=130 C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
200
A
A
1.0
0.5
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
o
0.77
I =15A, Tc=25 C
F
0.7
0.6
0.84
0.70
0.94
0.82
0.95
0.92
1.02
0.98
o
0.67
-
IF=15A, Tc=125 C
o
V
VF
I =30A, Tc=25 C
F
0.82
0.73
o
IF=30A, Tc=125 C
-
Maximum Instantaneous Reverse Current
o
0.1
5.0
@ Tc=25 C at Rated DC Blocking Voltage Per Leg
o
0.2
15
0.2
10
0.2
7.5
mA
mA
IR
@ Tc=125 C (Note 2)
Voltage Rate of Change, (Rated VR)
1,000
V/uS
pF
dV/dt
Typical Junction Capacitance
Cj
600
460
320
1.5
o
Maximum Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
1.0
C/W
RθJC
TJ
o
-65 to +150
-65 to +175
C
o
TSTG
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate
http://www.luguang.cn
mail:lge@luguang.cn
MBR3035CT-MBR30150CT
30.0AMP. Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES (MBR3035CT THRU MBR30150CT)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
FIG.1- FORWARD CURRENT DERATING CURVE
30
300
250
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
24
18
200
150
12
100
50
6
0
0
1
0
50
100
150
10
100
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
50
10
50
20
10
Tj=1250C
1
MBR3035CT & MBR3045CT
Tj=750C
5.0
3.0
0.1
0.01
MBR3050CT & MBR3060CT
MBR30150CT
MBR3090CT & MBR30100CT
Tj=250C
1.0
0.5
MBR3035CT-MBR3045CT
MBR3050CT & MBR30100CT
0.001
0
20
40
60
80
100
120
140
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.1
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
100
10.0
1
1000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
800
600
400
200
100
50
MBR3035CT & MBR3045CT
MBR3050CT & MBR3060CT
MBR3090CT-MBR30150CT
0.1
0.01
0
0.1
0.1
1
10
100
1
10
REVERSE VOLTAGE. (V)
100
T, PULSE DURATION. (sec)
http://www.luguang.cn
mail:lge@luguang.cn
相关型号:
MBR3090FCTE3/TU
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MICROSEMI
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