MMBD1505A [LGE]
High Conductance Low Leakage Diode; 高电导率低漏二极管
| 型号： | MMBD1505A |
| 厂家： | 
LGE |
| 描述： | High Conductance Low Leakage Diode |
| 文件： | 总3页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD1501A/1503A/1504A/1505A
High Conductance Low Leakage Diode
SOT-23
Features
Two element incorporated
into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and
assembly cost by one half.
Dimensions in inches and (millimeters)
Applications
For general application.
MMBD1501A
MMBD1503A
MMBD1504A
MMBD1505A
Ordering Information
Type No.
Marking
Package Code
MMBD1501A
MMBD1503A
MMBD1504A
MMBD1505A
A11
A13
A14
A15
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Reverse Voltage
VR
200
V
Average rectified current
VF(AV)
IFM
IFSM
Pd
200
600
mA
mA
Forward Continuous Current
Peak forward current (1.0s)
(1.0m)
1.0
2.0
A
Power Dissipation
350
mW
℃/W
℃
Thermal resistance,Junction to ambient RθJA
Storage temperature TSTG
357
-55-150
http://www.luguang.cn
mail:lge@luguang.cn
MMBD1501A/1503A/1504A/1505A
High Conductance Low Leakage Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R1
200
V
IR=5μA
0.62
0.72
0.8
0.72
0.83
0.89
0.93
1.1
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
Forward voltage
VF
V
0.83
0.87
0.9
1.15
1.0
10
4
VR=125V
Reverse current
IR
nA
pF
VR=180V
Diode Capacitance
CD
VR=0V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
MMBD1501A/1503A/1504A/1505A
High Conductance Low Leakage Diode
http://www.luguang.cn
mail:lge@luguang.cn
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