MMBD355 [LGE]
暂无描述;
| 型号： | MMBD355 |
| 厂家： | 
LGE |
| 描述： | 暂无描述 |
| 文件： | 总2页 (文件大小：1087K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance—
Less than 1.0pF@zero V.
Low forward voltage—IF=10mA.
Power dissipation Pd=300mW
Pb/RoHS Free
Dimensions in inches and (millimeters)
Applications
applications.
Designed primarily for UHF mixer
MMBD354
MMBD355
MMBD352
MMBD353
Ordering Information
Type No.
Marking
Package Code
MMBD352
MMBD353
MMBD354
MMBD355
M5G
M4F
M6H
MJ1
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
7.0
Unit
V
Continuous reverse voltage
VR
Power Dissipation
Pd
300
mW
℃/W
℃
Thermal Resistance,Junction-to-Ambient
Junction and storage temperature
RθJA
417
TJ,TSTG
-55-150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Min. Typ. Max.
Unit Conditions
Reverse Breakdown Voltage
V(BR)
VF
7.0
V
V
IR=100μA
Forward voltage
0.60
IF=10mA
0.25
10
VR=3.0V
VR=7.0V
Reverse current
IR
μA
Diode Capacitanc
CD
1.0
pF
VR=0V,f=1MHz
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
MMBD352-355
Dual Hot Carrier Mixer Diodes
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
CARTON
SPQ/PCS
CARTON
SIZE/CM
CARTON
GW/KG
CARTON
NW/KG
PACKAGE
SOT-23
SPQ/PCS
3000/REEL
90000
40X20X22
5.00
4.00
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
相关型号：
MMBD355LT1G
SILICON, UHF BAND, MIXER DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ROCHESTER
©2020 ICPDF网 联系我们和版权申明