P600B [LGE]
Plastic Silicon Rectifiers; 塑料硅整流型号: | P600B |
厂家: | LGE |
描述: | Plastic Silicon Rectifiers |
文件: | 总2页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
P600A-P600S
Plastic Silicon Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
R - 6
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easilycleaned witn Freon,Alcohol,lsopropanol
j
and similar solvents
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC R-6,molded plastic
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
P600 P600
P600 P600 P600 P600 P600 P600
UNITS
A
B
D
G
J
K
M
S
V
V
V
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
MaximumDC blocking voltage
100
1000
1200
Maximumaverage forw ard rectified current
A
6.0
IF(AV)
9.5mmlead length,
@TA=60
Peak forw ard surge current
IFSM
400
A
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximuminstantaneous forw ard voltage
@ 6.0 A
V
A
0.9
1.0
VF
IR
Maximumreverse current
@TA=25
5.0
1000
150
20
at rated DC blocking voltage @TA=100
pF
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
CJ
R
/W
JA
θ
Operating junction temperature range
Storage temperature range
-55----+150
-55----+150
TJ
TSTG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn
P600A-P600S
Plastic Silicon Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD DERATING CURVE
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
6
10
5
4
1.0
3
Single Phase
Half Wave 60H
Resistive or
Inductive Load
Z
2
1
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 - PEAK FORWARD SURGE CURRENT
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
1000
40
400
TJ=125
8.3ms Single Half
Sine-Wave
300
200
200
100
40
TJ=25
f=1MHz
100
0
20
10
.1
.2
.4
1.0
2
4
10 20 40
100
1
2
4
8
10
20
40 60 80 100
NUMBER OF CYCLES 60Hz
REVERSE VOLTAGE, VOLTS
http://www.luguang.cn
mail:lge@luguang.cn
相关型号:
P600B-E3
DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
VISHAY
P600B-E3/54
DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
VISHAY
P600B-E3/73
DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
VISHAY
P600B-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, P-600, 2 PIN
WTE
P600BE3
DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明