RB521S30 [LGE]
Schottky barrier Diode; 肖特基二极管
| 型号： | RB521S30 |
| 厂家： | 
LGE |
| 描述： | Schottky barrier Diode |
| 文件： | 总2页 (文件大小：477K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB521S-30
Schottky barrier Diode
SOD-523
FEATURES
z
Small surface mounting type
Low reverse current and low forward voltage
High reliability
z
z
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
DC reverse voltage
Symbol
VR
Limit
Unit
30
V
Mean rectifying current
Peak forward surge current
Power dissipation
IO
IFSM
PD
200
1
mA
A
150
mW
℃/W
℃
Rθ
Thermal Resistance Junction to Ambient
Junction temperature
JA
667
Tj
125
Storage temperature
Tstg
-55~+150
℃
Electrical Ratings @Ta=25℃
Parameter
Symbol
Min
Typ
Max
0.5
30
Unit
V
Conditions
IF=200mA
VR=10V
Forward voltage
Reverse current
VF
IR
μA
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Email:lge@luguang.cn
RB521S-30
Forward Characteristics
Reverse Characteristics
1000
100
10
1000
100
10
Ta=100 o
C
1
Ta=25 o
C
1
0.1
0.01
0.1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
FORWARD VOLTAGE VF (mV)
REVERSE VOLTAGE VR (V)
Capacitance Characteristics
Power Derating Curve
100
120
100
80
60
40
20
0
Ta=25℃
f=1MHz
30
10
3
1
0
5
10
15
20
0
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
REVERSE VOLTAGE VR (V)
http://www.luguang.cn
Email:lge@luguang.cn
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