SD103ATW [LGE]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
| 型号： | SD103ATW |
| 厂家： | 
LGE |
| 描述： | Surface Mount Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD103ATW
Surface Mount Schottky Barrier Diodes
SOT-363
Features
Low forward voltage drop.
Guard ring construction for transient
protection.
Fast switching.
Low leakage current.
Dimensions in inches and (millimeters)
Three fully isolated schottky diodes.
Also available in lead free version.
Applications
High speed switching.
Ordering Information
Type No.
Marking
KLL
Package Code
SOT-363
SD103ATW
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Characteristic
Value
Unit
VRRM
VRWM
VR
Peak Repetitive reverse Voltage
Working peak reverse voltage
DC blocking voltage
40
V
VR(RMS)
IFM
RMS reverse Voltage
28
V
Forward continuous current (max.)
Average rectified current
350
175
mA
mA
IO
Non-Repetitive peak forward surge current
IFSM
1.0
A
@t ≤10ms
RθJA
Thermal resistance, Junction to ambient air
500
℃/W
PD
Power Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55 to+125
℃
http://www.luguang.cn
mail:lge@luguang.cn
SD103ATW
Surface Mount Schottky Barrier Diodes
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Reverse breakdown voltage V(BR)R
IR=100μA
40
-
V
VR=10V
VR=30V
IF=1mA
0.2
2.0
5.0
Average reverse current
Forward voltage
IR
μA
0.4
0.27
0.32
0.36
0.44
IF=5mA
VF
-
V
IF=20mA
IF=100mA
0.37
0.50
Total Capacitance
CT
trr
VR=0V,f=1.0MHz
-
-
50
-
pF
ns
IF=IR=200mA,Irr=0.1*IR
Reverse recovery time
10
-
RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
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