SS315A [LGE]
3.0 AMPS. Surface Mount Schottky Barrier Rectifiers; 3.0安培。表面贴装肖特基整流器型号: | SS315A |
厂家: | LGE |
描述: | 3.0 AMPS. Surface Mount Schottky Barrier Rectifiers |
文件: | 总2页 (文件大小:362K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SS32A - SS320A
3.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SMA/DO-214AC
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
ꢀ
ꢀ
High temperature soldering:
260oC / 10 seconds at terminals
Mechanical Data
ꢀ
ꢀ
ꢀ
ꢀ
Case: JEDEC SMA/DO-214AC Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight: 0.064 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS SS SS SS SS SS SS SS
Type Number
Units
32A 33A 34A 35A 36A 39A 310A 320A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
90 100 200
63 70 140
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
90 100 200
Maximum Average Forward Rectified
Current at TL(See Fig. 1)
3.0
A
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
100
70
A
IFSM
Maximum Instantaneous Forward Voltage
IF= 3.0A @ 25oC
@ 100oC
V
(Note 1)
VF
IR
0.5
0.4
0.75
0.65
0.85
0.70
0.95
0.80
Maximum DC Reverse Current @ TA =25 oC at
Rated DC Blocking Voltage
@ TA=125 oC
0.5
0.1
0.5
mA
mA
10
5
28
88
Typical Thermal Resistance ( Note 2 )
R
oC/W
ΘJL
R
θJA
-55 to +125
-55 to +150
-55 to +150
oC
oC
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
http://www.luguang.cn
mail:lge@luguang.cn
SS32A - SS320A
3.0 AMPS. Surface Mount Schottky Barrier Rectifiers
RATINGSAND CHARACTERISTIC CURVES (SS32A THRU SS320A)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
CURVE
100
80
60
40
20
0
3
AT RATED TL
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
JEDEC Method
SS35A-SS320A
SS32A-SS34A
2
1
PCB MOUNTED ON 0.6X0.6"
(16X16mm) COPPER PAD AREAS
0
1
10
NUMBER OF CYCLES AT 60Hz
100
50
60
70
80
90
100
110
120 130 140 150
160
o
LEAD TEMPERATURE. ( C)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
20
10
40
0
TJ=25 C
SS35A-SS36A
0
TJ=125C
10
SS32A-SS34A
1
0
TJ=75C
1
0.1
SS39A-SS320A
0.1
0.01
0
TJ=25 C
SS320A
PULSE WIDTH=300
S
SS32A-SS34A
SS35A-SS320A
1% DUTY CYCLE
0.01
0.001
0
0
20
40
60
80
100
120
140
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
1000
100
10
1
0
TJ=25C
f=1.0MHz
Vsig=50mVp-p
100
SS32A-SS34A
SS35A-SS36A
SS39A-SS320A
10
0.1
1
10
100
0.1
REVERSE VOLTAGE. (V)
1
0.01
0.1
10
100
T, PULSE DURATION. (sec)
http://www.luguang.cn
mail:lge@luguang.cn
相关型号:
SS315AQ
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
YANGJIE
SS315AQF1
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
YANGJIE
SS315B
Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 150 V Forward Current 3.0 A
DACHANG
SS315C
Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 200 V Forward Current 3.0 A
DACHANG
SS315F
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A
JINANJINGHENG
SS315F1
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
YANGJIE
SS315SMB
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 3.0Amperes
MDD
©2020 ICPDF网 联系我们和版权申明