LA92B/2EG-1 [LIGITEK]
Optoelectronic Device;
| 型号： | LA92B/2EG-1 |
| 厂家： | 
LIGITEK ELECTRONICS CO., LTD. |
| 描述： | Optoelectronic Device |
| 文件： | 总6页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
LA92B/2EG-1
DATA SHEET
DOC. NO : QW0905-LA92B/2EG-1
REV.
: A
DATE
: 04 - Jan - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA92B/2EG-1
Page 1/5
Package Dimensions
11.72±0.5
7.0
9.02
2.9
9.65
5.08
2.3
3.3±0.3
□0.5
TYP
1
2
3
2.54TYP
2.54TYP
2.54±0.5
5.08±0.5
E
G
1.CATHODE GREEN
2.COMMON ANODE
3.CATHODE RED
1
-
2
+
3
-
LEG2692/R1
2.9 3.1
3.3
4.3
6.45±0.5
1.5
MAX
G
E
□0.5
TYP
18.0MIN
1
2
3
1
2
3
2.0MIN
2.0MIN
2.54TYP
1.CATHODE GREEN
2.COMMON ANODE
3.CATHODE RED
2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without not
ice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/5
PART NO. LA92B/2EG-1
Absolute Maximum Ratings at Ta=25℃
Ratings
Symbol
Parameter
UNIT
E
G
30
30
IF
IFP
PD
Ir
Forward Current
mA
mA
mW
Peak Forward Current
Duty 1/10@10KHz
120
100
10
120
100
10
Power Dissipation
Reverse Current @5V
Operating Temperature
Storage Temperature
μA
℃
Topr
Tstg
-40 ~ +85
-40 ~ +100
℃
Max 260℃for 5 sec Max
Soldering Temperature
Tsol
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25℃)
Forward
voltage
@20mA(V)
Luminous
intensity
@10mA(mcd)
Peak
wave
length
λPnm
Viewing
angle
2θ1/2
(deg)
Spectral
halfwidth
△λnm
COLOR
PART NO
MATERIAL
Typ.
Emitted
Orange
Lens
Min. Max. Min.
45
30
GaAsP/GaP
GaP
635
565
1.7
1.7
2.6
2.6
0.8 1.2
2.0
36
36
White Duffused
LA92B/2EG-1
Green
1.2
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA92B/2EG-1
Page 3/5
Typical Electro-Optical Characteristics Curve
E CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
1000
100
2.5
2.0
1.5
10
1.0
0.5
0.0
1.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
1.2
2.5
2.0
1.1
1.0
1.5
1.0
0.5
0.9
0.8
0.0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
700
750
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA92B/2EG-1
Page 4/5
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
3.0
2.5
2.0
1.5
1000
100
10
1.0
0.5
1.0
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
1.2
2.5
2.0
1.5
1.0
0.5
1.1
1.0
0.9
0.8
0.0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA92B/2EG-1
Page 5/5
Reliability Test:
Reference
Standard
Description
Test Item
Test Condition
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
High Temperature
Storage Test
1.Ta=105℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hous.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260℃±5℃
2.Dwell time= 10±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230℃±5℃
2.Dwell time=5±1sec
Solderability Test
相关型号：
©2020 ICPDF网 联系我们和版权申明