LBD241SBKS-XX-PF [LIGITEK]
DUAL DIGIT LED DISPLAY; 双位LED显示
| 型号： | LBD241SBKS-XX-PF |
| 厂家： | 
LIGITEK ELECTRONICS CO., LTD. |
| 描述： | DUAL DIGIT LED DISPLAY |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DUAL DIGIT LED DISPLAY
Pb
Lead-Free Parts
LBD241SBKS-XX-PF
DATA SHEET
DOC. NO : QW0905-LBD241SBKS-XX-PF
REV.
:
A
DATE
: 11 - Jan. - 2008
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LBD241SBKS-XX-PF
Package Dimensions
10.0(0.39")
9.0(0.35")
7.0(0.28")
8.0(0.31")
7.0(0.28")
1.8
LBD241SBKS-XX-PF
LIGITEK
0.51
TYP
5.0±0.5
2.54*3=7.62(0.3")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD241SBKS-XX-PF
Page 2/7
Internal Circuit Diagram
LBD241SBKS-XX-PF
1
3
2
4
Electrical Connection
PIN NO.1
1
LBD241SBKS-XX-PF
Anode
Cathode
Anode
2
3
Cathode
4
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD241SBKS-XX-PF
3/7
Page
Absolute Maximum Ratings at Ta=25 ℃
Ratings
SBKS
30
Symbol
Parameter
UNIT
Forward Current Per Chip
IF
mA
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
100
Power Dissipation Per Chip
mW
120
50
PD
μA
Reverse Current Per Any Chip
Electrostatic Discharge( * )
Operating Temperature
Storage Temperature
Ir
ESD
Topr
Tstg
500
V
-20 ~ +80
-25 ~ +85
℃
℃
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
glove is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
*
Part Selection And Application Information(Ratings at 25℃)
Electrical
common
cathode
or anode
CHIP
λD
(nm)
△λ
(nm)
Vf(v)
Typ.
Iv(mcd)
Typ.
Max. Min.
IV-M
2:1
PART NO
Material Emitted
Common
Cathode
460
26
3.5
4.2
6.1 8.5
LBD241SBKS-XX-PF
InGaN/SiC Bule
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/7
PART NO. LBD241SBKS-XX-PF
Test Condition For Each Parameter
Symbol
Unit
volt
Test Condition
Parameter
Forward Voltage Per Chip
Vf
If=20mA
If=10mA
If=20mA
If=20mA
Vr=5V
Luminous Intensity Per Chip
Dominant Wavelength
Iv
mcd
nm
λD
△λ
Ir
Spectral Line Half-Width
nm
μA
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD241SBKS-XX-PF
Page5/7
Typical Electro-Optical Characteristics Curve
SBK-S CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
30
25
20
15
10
5
1.5
1.25
1.0
0.75
0.5
0.25
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Forward Current(mA)
Forward Voltage(V)
Fig.4 Relative Intensity vs. Wavelength
Fig.3 Forward Current vs. Temperature
40
1.0
30
20
10
0
0.5
0
0
25
50
75
100
380 430
480 530 580 630 680
Wavelength (nm)
Ambient Temperature(℃)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/7
PART NO. LBD241SBKS-XX-PF
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One time only)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
Temp(°C)
260°C3sec Max
260°
5°/sec
max
120°
2°/sec
25°
0°
max
0
50
150
Time(sec)
100
Preheat
60 Seconds Max
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 7/7
PART NO. LBD241SBKS-XX-PF
Reliability Test:
Reference
Standard
Description
Test Item
Test Condition
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hours.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105 ℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
Solderability Test
相关型号：
©2020 ICPDF网 联系我们和版权申明