LFD4H5-64SF-XX-PF [LIGITEK]
FOUR DIGIT LED DISPLAY(0.39Inch); 四位LED显示（ 0.39Inch ）
| 型号： | LFD4H5-64SF-XX-PF |
| 厂家： | 
LIGITEK ELECTRONICS CO., LTD. |
| 描述： | FOUR DIGIT LED DISPLAY(0.39Inch) |
| 文件： | 总9页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
FOUR DIGIT LED DISPLAY(0.39Inch)
Pb
Lead-Free Parts
LFD4H5/64SF-XX-PF
DATA SHEET
DOC. NO : QW0905-LFD4H5/64SF-XX-PF
REV.
: A
DATE
: 12 - Nov. - 2007
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
1/8
Page
PART NO. LFD4H5/64SF-XX-PF
Package Dimensions
6.4
(0.252")
39.2(1.543")
PIN 16
PIN 11
PIN 20
PIN 15
DIG.1
DIG.2
DIG.3
DIG.4
DP1
DP2
10.16
(0.4")
12.9
(0.508")
10.28
(0.405")
PIN 5
PIN 1
PIN 10
ψ1.4
(0.055")
PIN 6
ψ0.45TYP
A
LFD4H5/64SF-XX-PF
LIGITEK
F
E
B
G
C
DP
D
4.7±0.5
2.54*4
=10.16
2.54*4
=10.16
PIN 1
10.16
PIN 5
PIN 6
PIN 10
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/8
PART NO. LFD4H5/64SF-XX-PF
Internal Circuit Diagram
LFD4H54SF-XX-PF
20
5
15
10
DIG.1
DIG.2
DIG.3
DIG.4
DP1
DP2
C D E F G
A
B
C D
E
F
G
A
B
C D
E
F
G
A
B
C D E
F
G
A
B
16
3 18 19
9 6 8 13
12 11 14
17
4
1
2
7
LFD4H64SF-XX-PF
20
5
15
10
DIG.1
DIG.2
DIG.3
DIG.4
DP1
DP2
C D E F G
A
B
C D
E
F
G
A
B
C D
E
F
G
A
B
C D E
F
G
A
B
16 4
3 18 19
9
6
8 13
14
7
17
1
2
12 11
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/8
PART NO. LFD4H5/64SF-XX-PF
Electrical Connection
PIN NO.
LFD4H54SF-XX-PF
Anode D (Dig.1,Dig.2)
PIN NO.
LFD4H64SF-XX-PF
Cathode D (Dig.1,Dig.2)
1
2
1
2
Cathode DP1
Anode
1
3
4
Cathode E (Dig.1,Dig.2)
3
4
Anode E (Dig.1,Dig.2)
Anode C (Dig.1,Dig.2)
Cathode C (Dig.1,Dig.2)
Common Anode Dig.2
Cathode D (Dig.3,Dig.4)
Cathode DP2
5
6
7
Common Cathode Dig.2
Anode D (Dig.3,Dig.4)
Anode DP2
5
6
7
8
9
8
9
Anode E (Dig.3,Dig.4)
Anode C (Dig.3,Dig.4)
Common Cathode Dig.4
Cathode E (Dig.3,Dig.4)
Cathode C (Dig.3,Dig.4)
Common Anode Dig.4
10
10
Anode B (Dig.3,Dig.4)
Anode A (Dig.3,Dig.4)
Anode F (Dig.3,Dig.4)
11
12
Cathode B (Dig.3,Dig.4)
Cathode A (Dig.3,Dig.4)
11
12
13
14
Cathode F (Dig.3,Dig.4)
Cathode G (Dig.3,Dig.4)
13
14
Anode G (Dig.3,Dig.4)
Common Cathode Dig.3
15
16
17
15
16
Common Anode Dig.3
Cathode B (Dig.1,Dig.2)
Cathode A (Dig.1,Dig.2)
Cathode F (Dig.1,Dig.2)
Anode B (Dig.1,Dig.2)
Anode A (Dig.1,Dig.2)
Anode F (Dig.1,Dig.2)
17
18
19
20
18
19
20
Cathode G (Dig.1,Dig.2)
Common Anode Dig.1
Anode G (Dig.1,Dig.2)
Common Cathode Dig.1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/8
PART NO. LFD4H5/64SF-XX-PF
Absolute Maximum Ratings at Ta=25 ℃
Ratings
SEF
Symbol
Parameter
UNIT
Forward Current Per Chip
IF
50
90
mA
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
Power Dissipation Per Chip
mW
120
10
PD
Ir
μA
Reverse Current Per Any Chip
Electrostatic Discharge( * )
Operating Temperature
Storage Temperature
ESD
Topr
Tstg
2000
μA
℃
-25 ~ +85
-25 ~ +85
℃
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
*
glove is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
Part Selection And Application Information(Ratings at 25℃)
Electrical
common
cathode
or anode
CHIP
λD
(nm)
△λ
(nm)
Vf(v)
Typ.
Iv(mcd)
Typ.
Max. Min.
IV-M
2:1
PART NO
Material Emitted
Min.
1.7
Common
Cathode
LFD4H54SF-XX-PF
LFD4H64SF-XX-PF
Orange
AlGaInP
605
17
2.1 2.6 15.25 26
Common
Anode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/8
PART NO. LFD4H5/64SF-XX-PF
Test Condition For Each Parameter
Symbol
Unit
volt
Test Condition
Parameter
Forward Voltage Per Chip
Vf
If=20mA
If=10mA
If=20mA
If=20mA
Vr=5V
Luminous Intensity Per Chip
Dominant Wavelength
Iv
mcd
nm
λD
△λ
Ir
Spectral Line Half-Width
nm
μA
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/8
PART NO. LFD4H5/64SF-XX-PF
Typical Electro-Optical Characteristics Curve
SEF CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
60
50
3.0
2.0
40
30
20
1.0
0.0
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
1.2
2.5
2.0
1.5
1.1
1.0
0.9
0.8
1.0
0.5
0.0
-20
0
20
40
60
80
-20
0
20
40
60
80
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
500
650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 7/8
PART NO. LFD4H5/64SF-XX-PF
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One time only)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260 °C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260 °C
Temp(°C)
260°C3sec Max
260°
5°/sec
max
120°
2°/sec
25°
0°
max
0
50
150
Time(sec)
100
Preheat
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 8/8
PART NO. LFD4H5/64SF-XX-PF
Reliability Test:
Reference
Standard
Description
Test Item
Test Condition
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
High Temperature
Storage Test
1.Ta=105℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hours.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260℃±5℃
2.Dwell time= 10±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230℃±5℃
2.Dwell time=5±1sec
Solderability Test
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