LFD4K5-63HS-XX-F2 [LIGITEK]
FOUR DIGIT LED DISPLAY (0.39 Inch); 四位LED显示（ 0.39英寸）
| 型号： | LFD4K5-63HS-XX-F2 |
| 厂家： | 
LIGITEK ELECTRONICS CO., LTD. |
| 描述： | FOUR DIGIT LED DISPLAY (0.39 Inch) |
| 文件： | 总8页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
FOUR DIGIT LED DISPLAY (0.39 Inch)
LFD4K5/63HS-XX/F2
DATA SHEET
DOC. NO : QW0905-LFD4K5/63HS-XX/F2
REV.
: A
DATE
: 19 - Sep.- 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LFD4K5/63HS-XX/F2
Package Dimensions
7.0(0.276")
40.18(1.582")
L1
DIG.1
DIG.2
DIG.3
DIG.4
L3
12.8
(0.504")
10.0
(0.39")
10.5±0.5
L2
DP
ψ 1.2
ψ0.51
TYP
17.5MIN
A
2.54*13=33.02
F
B
G
LFD4K5/63HS-XX/F2
LIGITEK
E
C
DP
D
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO. LFD4K5/63HS-XX/F2
Internal Circuit Diagram
LFD4K53HS-XX/F2
LFD4K63HS-XX/F2
14
13
12
11
10
9
8
7
14
13
A
B
C
D
E
F
G
DP
DIG.1
A
B
C
D
E
F
G
DP
DIG.1
12
11
10
9
8
7
5
5
A
B
DIG.2
A
B
DIG.2
C
C
D
E
D
E
4
4
F
F
G
DP
G
DP
A
B
DIG.3
A
B
DIG.3
C
C
D
E
D
E
2
2
F
F
G
DP
G
DP
A
B
DIG.4
A
B
DIG.4
C
C
D
E
D
E
1
1
F
F
G
DP
G
DP
L1
L2
L3
L1
L2
L3
3
3
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/7
PART NO. LFD4K5/63HS-XX/F2
Electrical Connection
PIN NO.1
1
LFD4K53HS-XX/F2
PIN NO.1
1
LFD4K63HS-XX/F2
Common Anode Dig.4
Common Cathode Dig.4
Common Anode Dig.3
Anode L1,L2,L3
Common Cathode Dig.3
Cathode L1,L2,L3
2
3
2
3
Common Cathode Dig.2
Common Anode Dig.2
Common Anode Dig.1
4
4
Common Cathode Dig.1
NO CONNECT
Anode DP
5
5
NO CONNECT
Cathode DP
Cathode G
6
6
7
7
Anode G
8
8
Anode F
Cathode F
9
9
Anode E
Cathode E
10
11
12
13
10
11
12
13
Anode D
Cathode D
Anode C,L3
Anode B,L2
Anode A,L1
Cathode C,L3
Cathode B,L2
Cathode A,L1
14
14
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
4/7
PART NO. LFD4K5/63HS-XX/F2
Page
Absolute Maximum Ratings at Ta=25 ℃
Ratings
HYS
30
Symbol
Parameter
UNIT
Forward Current Per Chip
IF
mA
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
60
IFP
Power Dissipation Per Chip
mW
PD
75
10
μA
Reverse Current Per Any Chip
Electrostatic Discharge
Ir
ESD
Topr
Tstg
V
2000
Operating Temperature
Storage Temperature
-25 ~ +85
-25 ~ +85
℃
℃
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
Electrical
common
cathode
or anode
CHIP
Emitted
λD △λ
Vf(v)
Iv(mcd)
Typ.
Min. Max. Min.
IV-M
PART NO
(nm)
(nm)
Material
Common
Anode
LFD4K53HS-XX/F2
LFD4K63HS-XX/F2
Yellow
AlGaInP
587
15
2.6 12.8 17.0
1.7
2:1
Common
Cathode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
5/7
PART NO. LFD4K5/63HS-XX/F2
Page
Test Condition For Each Parameter
Symbol
Unit
volt
Test Condition
If=20mA
If=10mA
If=20mA
If=20mA
Vr=5V
Parameter
Forward Voltage Per Chip
Vf
Iv
Luminous Intensity Per Chip
Dominant Wavelength
mcd
nm
λD
△λ
Ir
Spectral Line Half-Width
nm
Reverse Current Any Chip
Luminous Intensity Matching Ratio
μA
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LFD4K5/63HS-XX/F2
Page
6/7
PART NO.
Typical Electro-Optical Characteristics Curve
HYS CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
2.5
2.0
1000
100
10
1.5
1.0
1.0
0.1
0.5
0.0
1.0
1.5
2.0
2.5
3.0
1.0
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
500
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4K5/63HS-XX/F2
Page 7/7
Reliability Test:
Reference
Standard
Description
Test Item
Test Condition
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
High Temperature
Storage Test
1.Ta=105℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hous.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
Solderability Test
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