LFD4K5-6SBKS-XX-F2 [LIGITEK]
FOUR DIGIT LED DISPLAY (0.39 Inch); 四位LED显示（ 0.39英寸）
| 型号： | LFD4K5-6SBKS-XX-F2 |
| 厂家： | 
LIGITEK ELECTRONICS CO., LTD. |
| 描述： | FOUR DIGIT LED DISPLAY (0.39 Inch) |
| 文件： | 总8页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
FOUR DIGIT LED DISPLAY (0.39 Inch)
LFD4K5/6SBKS-XX/F2
DATA SHEET
DOC. NO : QW0905-LFD4K5/6SBKS-XX/F2
REV.
: A
DATE
: 31 - May.- 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4K5/6SBKS-XX/F2
Page 1/7
Package Dimensions
7.0(0.276")
10.5¡ Ó0.5
40.18(1.582")
L1
DIG.1
DIG.2
DIG.3
DIG.4
L3
12.8
(0.504")
10.0
(0.39")
L2
DP
1.2
ψ0.51
TYP
17.5MIN
2.54*13=33.02
A
F
B
G
LFD4K5/6SBKS-XX/F2
LIGITEK
E
C
DP
D
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO. LFD4K5/6SBKS-XX/F2
Internal Circuit Diagram
LFD4K5SBKS-XX/F2
LFD4K6SBKS-XX/F2
14
13
12
11
10
9
8
7
14
13
A
B
C
D
E
F
G
DP
DIG.1
A
B
C
D
E
F
G
DP
DIG.1
12
11
10
9
8
7
5
5
A
B
DIG.2
A
B
DIG.2
C
C
D
E
D
E
4
4
F
F
G
DP
G
DP
A
B
DIG.3
A
B
DIG.3
C
C
D
E
D
E
2
2
F
F
G
DP
G
DP
A
B
DIG.4
A
B
DIG.4
C
C
D
E
D
E
1
1
F
F
G
DP
G
DP
L1
L2
L3
L1
L2
L3
3
3
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4K5/6SBKS-XX/F2
Page 3/7
Electrical Connection
PIN NO.1
1
LFD4K5SBKS-XX/F2
PIN NO.1
1
LFD4K6SBKS-XX/F2
Common Anode Dig.4
Common Cathode Dig.4
Common Anode Dig.3
Common Cathode Dig.3
Catgide L1,L2,L3
2
3
2
3
Anode L1,L2,L3
Common Cathode Dig.2
Common Anode Dig.2
Common Anode Dig.1
4
4
Common Cathode Dig.1
NO CONNECT
5
5
NO CONNECT
Cathode DP
Cathode G
6
6
Anode DP
Anode G
7
7
8
8
Anode F
Cathode F
9
9
Anode E
Cathode E
10
11
12
13
10
11
12
13
Anode D
Cathode D
Anode C,L3
Anode B,L2
Anode A,L1
Cathode C,L3
Cathode B,L2
Cathode A,L1
14
14
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/7
PART NO. LFD4K5/6SBKS-XX/F2
Absolute Maximum Ratings at Ta=25 ℃
Ratings
SBKS
30
Symbol
Parameter
UNIT
Forward Current Per Chip
IF
mA
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
100
IFP
Power Dissipation Per Chip
mW
PD
120
50
μA
Reverse Current Per Any Chip
Electrostatic Discharge
Ir
ESD
Topr
Tstg
V
500
Operating Temperature
Storage Temperature
-25 ~ +85
-25 ~ +85
℃
℃
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
Electrical
common
cathode
or anode
CHIP
Material Emitted
λD
(nm)
△λ
(nm)
Vf(v)
Typ.
Iv(mcd)
Typ.
IV-M
2:1
PART NO
Max.
Min.
Common
Anode
LFD4K5SBKS-XX/F2
LFD4K6SBKS-XX/F2
InGaN/SiC Blue
475
26
3.5
4.2 5.0 8.5
Common
Cathode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4K5/6SBKS-XX/F2
Page 5/7
Test Condition For Each Parameter
Symbol
Unit
volt
Test Condition
Parameter
Forward Voltage Per Chip
Vf
If=20mA
If=10mA
If=20mA
If=20mA
Vr=5V
Luminous Intensity Per Chip
Dominant Wavelength
Iv
mcd
nm
λD
△λ
Ir
Spectral Line Half-Width
nm
μA
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 6/7
PART NO. LFD4K5/6SBKS-XX/F2
Typical Electro-Optical Characteristics Curve
SBK-S CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
30
25
20
15
10
5
1.5
1.25
1.0
0.75
0.5
0.25
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Forward Current(mA)
Forward Voltage(V)
Fig.4 Relative Intensity vs. Wavelength
Fig.3 Forward Current vs. Temperature
40
1.0
30
20
10
0
0.5
0
0
25
50
75
100
380 430
480 530 580 630 680
Wavelength (nm)
Ambient Temperature(℃)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LFD4K5/6SBKS-XX/F2
Page 7/7
Reliability Test:
Reference
Standard
Description
Test Item
Test Condition
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
High Temperature
Storage Test
1.Ta=105℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hous.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
Solderability Test
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