LPT3323/TBS-12-PF [LIGITEK]

Photo Transistor;
LPT3323/TBS-12-PF
型号: LPT3323/TBS-12-PF
厂家: LIGITEK ELECTRONICS CO., LTD.    LIGITEK ELECTRONICS CO., LTD.
描述:

Photo Transistor

文件: 总6页 (文件大小:106K)
中文:  中文翻译
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LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
TAPE AND BOX TYPE LED LAMPS  
Pb  
Lead-Free Parts  
LPT3323/TBS-X-PF  
DATA SHEET  
DOC. NO : QW0905-LPT3323/TBS-X-PF  
REV.  
: D  
DATE  
: 19 - Sep.- 2006  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
LPT3323/TBS-X-PF  
PART NO.  
Page 1/5  
Package Dimension  
5.0  
7.6  
5.9  
8.6  
ΔH  
P2  
H2  
H1  
W2  
W1  
12.5MIN  
1.0MIN  
L
W0  
1.EMITTER  
2.COLLECTOR  
W3  
2.3TYP  
1 2  
- +  
D
Features  
P1  
F
. High illumination sensitivity  
. Stable characteristics  
P
. Spectrally and mechanically  
matched with IR emitter  
Description  
The LPT3323/TBS-X-PF series are silicon nitride passivated  
NPN planar phototransistors with exceptionally table  
characteristics and igh illumination sensitivity the cases of  
LPT3323/TBS-X-PF are ncapsulated in water clear plastic T1  
3/4 package individuallt  
T
Note:1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted  
2.Specifications are subject to change without notice  
MAXIMUM RATINGS(Ta=25)  
PARAMETER  
MAXIMUM RATINGS  
UNIT  
mw  
V
Power Dissipation  
100  
30  
5
Collector-Emitter Voltage  
Emitter-Collector Voltage  
Operating Temperature  
Storage Temperature  
V
-50TO +100℃  
-50TO +100℃  
ELECTRICAL CHARACTERISTICS(Ta=25)  
Typ.  
TEST CONDITION  
Ic=1mA  
PARAMETER  
SYMBOL  
Min.  
30  
Max.  
0.4  
UNIT  
V
Collector-Emitter  
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
Collector-Emitter  
Saturation Voltage  
Rise Time  
V(BR)CEO  
Ee=0mw/c㎡  
IE=100μA  
Ee=0mw/c㎡  
Ic=0.5mA  
Ee=20mw/c㎡  
V(BR)ECO  
5
V
VCE(sat)  
V
μs  
5
5
Tr  
Tf  
VCE=30V  
IC=800μA, RL=1KΩ  
μs  
Fall Time  
VCE=10V  
Ee=0mw/c㎡  
Collector Dark  
Current  
Wavelength of Peak  
Sensitivity  
Range of Spectral Bandwidth  
ICEO  
100  
---  
nA  
λP  
800  
---  
---  
nm  
---  
2
λ0.5  
400-1100  
nm  
mA  
mA  
mA  
mA  
Ip(on)  
1
2
4
8
On State Collector  
Current  
VCE=5v  
Ee=1mw/c㎡  
λP=940nm  
4
8
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO.LPT3323/TBS-X-PF  
Page 2/5  
Dimension Symbol Information  
SPECIFICATIONS  
OPTION  
CODE  
SYMBOL ITEMS  
SYMBOL  
Minimum  
Maximum  
inch  
inch  
mm  
3.8  
mm  
4.2  
Tape Feed Hole Diameter  
Component Lead Pitch  
Front-To-Rear Deflection  
------  
------  
D
F
0.15  
0.09  
-----  
0.17  
0.12  
0.08  
0.73  
0.89  
1.04  
1.12  
0.93  
0.82  
0.98  
1.0  
2.2  
3.0  
H  
------  
-----  
2.0  
TBS-1  
TBS-2  
TBS-3  
TBS-4  
TBS-5  
TBS-6  
TBS-7  
TBS-8  
TBS-9  
TBS-10  
TBS-11  
TBS-12  
TBS-13  
------  
17.5  
21.5  
25.5  
27.5  
22.5  
19.9  
24.0  
24.5  
19.0  
18.4  
21.0  
20.5  
18.0  
-----  
0.69  
0.85  
1.0  
18.5  
22.5  
26.5  
28.5  
23.5  
20.9  
25.0  
25.5  
20.0  
19.4  
22.0  
21.5  
19.0  
36.0  
11.0  
13.0  
2.8  
1.08  
0.89  
0.78  
0.94  
0.96  
0.75  
0.72  
0.83  
0.81  
0.71  
-----  
Feed Hole To Bottom Of Component  
H1  
0.79  
0.76  
0.87  
0.85  
0.75  
1.42  
0.43  
0.51  
0.23  
0.3  
Feed Hole To Overall Component Height  
Lead LengthAfter Component Height  
H2  
L
------  
W0  
Feed Hole Pitch  
0.49  
0.17  
0.2  
------  
P
12.4  
4.4  
Lead Location  
------  
P1  
P2  
T
Center Of Component Location  
Overall Taped Package Thickness  
5.1  
------  
7.7  
------  
-----  
8.5  
-----  
0.33  
0.57  
0.0  
1.42  
9.75  
15.5  
4.0  
0.06  
0.38  
0.61  
0.16  
0.75  
Feed Hole Location  
------  
W0  
W1  
W2  
W3  
Adhesive Tape Width  
------  
14.5  
0.0  
Adhesive Tape Position  
Tape Width  
------  
17.5  
0.69  
19.0  
------  
REMARK : TBS = Tape And Box Straight Leads  
Dimensions Symbol Information  
Package Dimensions  
Specification  
minimum maxmum  
Description  
Symbol  
W
L
mm  
inch  
13.0  
10.4  
1.97  
mm  
inch  
13.4  
10.8  
2.40  
Overall Length  
Overall Width  
L
W
H
330  
265  
50.0  
340  
275  
60.0  
H
Overall Thickness  
Quantity/Box  
2000PCS  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 3/5  
PART NO.LPT3323/TBS-X-PF  
Typical Electro-Optical Characteristics Curve  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
LPT3323/TBS-X-PF  
PART NO.  
Page 4/5  
Soldering Condition(Pb-Free)  
1.Iron:  
Soldering Iron:30W Max  
Temperature 350°C Max  
Soldering Time:3 Seconds Max(One time only)  
Distance:2mm Min(From solder joint to body)  
2.Wave Soldering Profile  
Dip Soldering  
Preheat: 120°C Max  
Preheat time: 60seconds Max  
Ramp-up  
2°C/sec(max)  
Ramp-Down:-5°C/sec(max)  
Solder Bath:260°C Max  
Dipping Time:3 seconds Max  
Distance:2mm Min(From solder joint to body)  
Temp(°C)  
260°C3sec Max  
260°  
5°/sec  
max  
120°  
2°/sec  
25°  
0°  
max  
0
50  
150  
Time(sec)  
100  
Preheat  
60 Seconds Max  
Note: 1.Wave solder should not be made more than one time.  
2.You can just only select one of the soldering conditions as above.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 5/5  
PART NO.  
LPT3323/TBS-X-PF  
Reliability Test:  
Reference  
Standard  
Description  
Test Item  
Test Condition  
1.Under Room Temperature  
2.If=20mA  
3.t=1000 hrs (-24hrs, +72hrs)  
This test is conducted for the purpose  
of detemining the resistance of a part  
in electrical and themal stressed.  
MIL-STD-750: 1026  
MIL-STD-883: 1005  
JIS C 7021: B-1  
Operating Life Test  
The purpose of this is the resistance of  
the device which is laid under condition  
of high temperature for hours.  
High Temperature  
Storage Test  
1.Ta=85℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-883:1008  
JIS C 7021: B-10  
The purpose of this is the resistance  
of the device which is laid under  
condition of low temperature for hours.  
Low Temperature  
Storage Test  
1.Ta=-40 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
JIS C 7021: B-12  
1.Ta=65℃±5℃  
2.RH=90%~95%  
3.t=240hrs ±2hrs  
High Temperature  
High Humidity Test  
The purpose of this test is the resistance  
of the device under tropical for hours.  
MIL-STD-202:103B  
JIS C 7021: B-11  
The purpose of this is the resistance of  
the device to sudden extreme changes  
in high and low temperature.  
1.Ta=105 ℃±5&-40℃±5℃  
(10min) (10min)  
2.total 10 cycles  
MIL-STD-202: 107D  
MIL-STD-750: 1051  
MIL-STD-883: 1011  
Thermal Shock Test  
This test intended to determine the  
thermal characteristic resistance  
of the device to sudden exposures  
at extreme changes in temperature  
when soldering the lead wire.  
MIL-STD-202: 210A  
MIL-STD-750: 2031  
JIS C 7021: A-1  
Solder Resistance  
Test  
1.T.Sol=260 ℃±5℃  
2.Dwell time= 10 ±1sec.  
MIL-STD-202: 208D  
MIL-STD-750: 2026  
MIL-STD-883: 2003  
JIS C 7021: A-2  
This test intended to see soldering well  
performed or not.  
1.T.Sol=230 ℃±5℃  
2.Dwell time=5 ±1sec  
Solderability Test  

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