LSD511-2DBK-XX-PF [LIGITEK]

SINGLE DIGIT LED DISPLAY (0.56 Inch); 单位LED显示( 0.56英寸)
LSD511-2DBK-XX-PF
型号: LSD511-2DBK-XX-PF
厂家: LIGITEK ELECTRONICS CO., LTD.    LIGITEK ELECTRONICS CO., LTD.
描述:

SINGLE DIGIT LED DISPLAY (0.56 Inch)
单位LED显示( 0.56英寸)

文件: 总10页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
SINGLE DIGIT LED DISPLAY (0.56 Inch)  
Pb  
Lead-Free Parts  
LSD511/2DBK-XX-PF  
DATA SHEET  
DOC. NO : QW0905-LSD511/2DBK-XX-PF  
REV.  
: B  
DATE  
: 21 -Apr. - 2009  
發行  
立碁電子  
DCC  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSD511/2DBK-XX-PF  
Page 1/8  
Package Dimensions  
12.5  
8.0  
(0.492")  
(0.315")  
A
F
B
G
D
14.2  
(0.56")  
19.0  
(0.748")  
15.2  
(0.598")  
E
C
DP  
ψ1.6(0.063")  
LSD511/2DBK-XX-PF  
LIGITEK  
4.2±0.5  
Ø0.51  
TYP  
2.54X2  
2.3  
2.3  
PIN NO.1  
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted.  
2.Specifications are subject to change without notice.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 2/8  
PART NO. LSD511/2DBK-XX-PF  
Internal Circuit Diagram  
LSD511DBK-XX-PF  
3,8  
DP  
A B C D E F G  
6
9 10 5  
7 4 2 1  
LSD512DBK-XX-PF  
3,8  
DP  
A B C D E F G  
6
9 10 5  
7 4 2 1  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSD511/2DBK-XX-PF  
Page 3/8  
Electrical Connection  
PIN NO.  
1
LSD511DBK-XX-PF  
PIN NO.  
1
LSD512DBK-XX-PF  
Anode E  
Anode D  
Cathode E  
Cathode D  
2
3
2
3
Common Cathode  
Anode C  
Common Anode  
Cathode C  
4
4
Cathode DP  
Cathode B  
Cathode A  
Anode DP  
Anode B  
5
5
6
6
Anode A  
7
7
Common Cathode  
Anode F  
Common Anode  
Cathode F  
8
8
9
9
Cathode G  
Anode G  
10  
10  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSD511/2DBK-XX-PF  
Page 4/8  
Absolute Maximum Ratings at Ta=25  
Ratings  
DBK  
30  
Symbol  
Parameter  
UNIT  
Forward Current Per Chip  
IF  
mA  
mA  
Peak Forward Current Per  
Chip (Duty 1/10,0.1ms  
Pulse Width)  
100  
IFP  
Power Dissipation Per Chip  
mW  
PD  
120  
50  
μA  
Reverse Current Per Any Chip  
Electrostatic Discharge( * )  
Ir  
ESD  
V
500  
Topr  
Operating Temperature  
Storage Temperature  
-25 ~ +85  
-25 ~ +85  
Tstg  
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic  
glove is recommended when handing these LED. All devices, equipment and machinery must be properly  
grounded.  
*
Part Selection And Application Information(Ratings at 25)  
Electrical  
common  
cathode  
or anode  
CHIP  
λD △λ  
Vf(v)  
Typ.  
Iv(mcd)  
IV-M  
2:1  
PART NO  
(nm)  
(nm)  
Typ.  
Material Emitted  
Max.  
4.0  
Min.  
Min.  
Common  
Cathode  
LSD511DBK-XX-PF  
LSD512DBK-XX-PF  
InGaN/GaN  
460  
30  
---- 3.5  
26  
50  
Blue  
Common  
Anode  
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.  
2. The luminous intensity data did not including ±15% testing tolerance.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSD511/2DBK-XX-PF  
Page 5/8  
Test Condition For Each Parameter  
Symbol  
Vf  
Unit  
volt  
Test Condition  
If=20mA  
If=10mA  
If=20mA  
If=20mA  
Vr=5V  
Parameter  
Forward Voltage Per Chip  
Luminous Intensity Per Chip  
Dominant Wavelength  
Iv  
mcd  
nm  
λD  
△λ  
Ir  
Spectral Line Half-Width  
nm  
Reverse Current Any Chip  
Luminous Intensity Matching Ratio  
μA  
IV-M  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSD511/2DBK-XX-PF  
Page 6/8  
Typical Electro-Optical Characteristics Curve  
DBK CHIP  
Fig.1 Forward current vs. Forward Voltage  
Fig.2 Relative Intensity vs. Forward Current  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1000  
100  
10  
1
0 1  
1.0  
2.0  
3.0  
4.0  
5.0  
1
10  
100  
1000  
Forward Current(mA)  
Forward Voltage(V)  
Fig.3 Forward Voltage vs. Temperature  
Fig.4 Relative Intensity vs. Temperature  
1.2  
3.0  
2.5  
2.0  
1.1  
1.0  
1.5  
1.0  
0.5  
0.9  
0.8  
0.0  
-40  
-20  
0
20  
40  
60  
80  
100  
-40 -20  
0
20  
40  
60  
80  
100  
Ambient Temperature()  
Ambient Temperature()  
Fig.5 Relative Intensity vs. Wavelength  
1.0  
0.5  
0.0  
400  
450  
500  
550  
Wavelength (nm)  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 7/8  
PART NO. LSD511/2DBK-XX-PF  
Soldering Condition(Pb-Free)  
1.Iron:  
Soldering Iron:30W Max  
Temperature 350 °C Max  
Soldering Time:3 Seconds Max(One time only)  
Distance:Solder Temperature 1/16 Inch Below Seating  
Plane For 3 Seconds At 260 °C  
2.Wave Soldering Profile  
Dip Soldering  
Preheat: 120°C Max  
Preheat time: 60seconds Max  
Ramp-up  
2°C/sec(max)  
Ramp-Down:-5°C/sec(max)  
Solder Bath:260°C Max  
Dipping Time:3 seconds Max  
Distance:Solder Temperature 1/16 Inch Below Seating  
Plane For 3 Seconds At 260°C  
Temp(°C)  
260°C3sec Max  
260°  
5°/sec  
max  
120°  
2°/sec  
25°  
0°  
max  
0
50  
150  
Time(sec)  
100  
Preheat  
60 Seconds Max  
Note: 1.Wave solder should not be made more than one time.  
2.You can just only select one of the soldering conditions as above.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSD511/2DBK-XX-PF  
Page 8/8  
Reliability Test:  
Reference  
Standard  
Description  
Test Item  
Test Condition  
1.Under Room Temperature  
2.If=10mA  
3.t=1000 hrs (-24hrs, +72hrs)  
This test is conducted for the purpose  
of detemining the resistance of a part  
in electrical and themal stressed.  
MIL-STD-750: 1026  
MIL-STD-883: 1005  
JIS C 7021: B-1  
Operating Life Test  
The purpose of this is the resistance of  
the device which is laid under condition  
of high temperature for hours.  
High Temperature  
Storage Test  
1.Ta=105 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-883:1008  
JIS C 7021: B-10  
The purpose of this is the resistance  
of the device which is laid under  
condition of low temperature for hours.  
Low Temperature  
Storage Test  
1.Ta=-40℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
JIS C 7021: B-12  
1.Ta=65℃±5℃  
2.RH=90%~95%  
3.t=240hrs ±2hrs  
High Temperature  
High Humidity Test  
The purpose of this test is the resistance  
of the device under tropical for hours.  
MIL-STD-202:103B  
JIS C 7021: B-11  
The purpose of this is the resistance of  
the device to sudden extreme changes  
in high and low temperature.  
1.Ta=105 ℃±5&-40℃±5℃  
(10min) (10min)  
2.total 10 cycles  
MIL-STD-202: 107D  
MIL-STD-750: 1051  
MIL-STD-883: 1011  
Thermal Shock Test  
This test intended to determine the  
thermal characteristic resistance  
of the device to sudden exposures  
at extreme changes in temperature  
when soldering the lead wire.  
MIL-STD-202: 210A  
MIL-STD-750: 2031  
JIS C 7021: A-1  
Solder Resistance  
Test  
1.T.Sol=260 ℃±5℃  
2.Dwell time= 10 ±1sec.  
MIL-STD-202: 208D  
MIL-STD-750: 2026  
MIL-STD-883: 2003  
JIS C 7021: A-2  
This test intended to see soldering well  
performed or not.  
1.T.Sol=230 ℃±5℃  
2.Dwell time=5 ±1sec  
Solderability Test  
PACKING SPECIFICATION  
1. 40PCS / TUBE  
2. 54 TUBES / INNER BOX  
SIZE : L X W X H 55cm X 22.5cm X 10cm  
L
W
H
3. 4 INNER BOXES / CARTON  
SIZE : L X W X H 56.5cm X 47.5cm X 24cm  
L
W
H
C/NO:  
MADE IN CHINA  

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