LT3412AEUF#TR [Linear]

IC 3 A SWITCHING REGULATOR, 4 kHz SWITCHING FREQ-MAX, PQCC16, 4 X 4 MM, PLASTIC, QFN-16, Switching Regulator or Controller;
LT3412AEUF#TR
型号: LT3412AEUF#TR
厂家: Linear    Linear
描述:

IC 3 A SWITCHING REGULATOR, 4 kHz SWITCHING FREQ-MAX, PQCC16, 4 X 4 MM, PLASTIC, QFN-16, Switching Regulator or Controller

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文件: 总20页 (文件大小:250K)
中文:  中文翻译
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LTC3412A  
3A, 4MHz, Monolithic  
Synchronous Step-Down Regulator  
U
DESCRIPTIO  
FEATURES  
The LTC®3412A is a high efficiency monolithic synchro-  
nous, step-down DC/DC converter utilizing a constant  
frequency, current mode architecture. It operates from an  
input voltage range of 2.25V to 5.5V and provides a  
regulated output voltage from 0.8V to 5V while delivering  
up to 3A of output current. The internal synchronous  
power switch with 77mΩ on-resistance increases effi-  
ciency and eliminates the need for an external Schottky  
diode. Switchingfrequencyissetbyanexternalresistoror  
can be synchronized to an external clock. 100% duty cycle  
provides low dropout operation extending battery life in  
portable systems. OPTI-LOOP® compensation allows the  
transient response to be optimized over a wide range of  
loads and output capacitors.  
High Efficiency: Up to 95%  
3A Output Current  
Low Quiescent Current: 64μA  
Low RDS(ON) Internal Switch: 77mΩ  
2.25V to 5.5V Input Voltage Range  
Programmable Frequency: 300KHz to 4MHz  
2% Output Voltage Accuracy  
0.8V Reference Allows Low Output Voltage  
Selectable Forced Continuous/Burst Mode®operation  
with Adjustable Burst Clamp  
Synchronizable Switching Frequency  
Low Dropout Operation: 100% Duty Cycle  
Power Good Output Voltage Monitor  
Overtemperature Protected  
Available in 16-Lead Exposed Pad TSSOP and QFN  
Packages  
The LTC3412A can be configured for either Burst Mode  
operationorforcedcontinuousoperation.Forcedcontinu-  
ous operation reduces noise and RF interference while  
Burst Mode operation provides high efficiency by reduc-  
ing gate charge losses at light loads. In Burst Mode  
operation, external control of the burst clamp level allows  
the output voltage ripple to be adjusted according to the  
application requirements.  
U
APPLICATIO S  
Point-of-Load Regulation  
Notebook Computers  
Portable Instruments  
Distributed Power Systems  
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.  
Burst Mode and OPTI-LOOP are registered trademarks of Linear Technology Corporation.  
All other trademarks are the property of their respective owners.  
Protected by U.S. Patents, including 5481178, 6580258, 6304066, 6127815, 6498466,  
6611131, 6724174.  
U
TYPICAL APPLICATIO  
22μF  
Efficiency and Power Loss  
V
IN  
3.3V  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
100000  
10000  
1000  
100  
PV SV  
IN  
EFFICIENCY  
IN  
RT  
2.2M  
PGOOD  
LTC3412A  
0.47μH  
294k  
V
OUT  
SW  
2.5V AT 3A  
C
OUT  
RUN/SS  
PGND  
100μF  
×2  
12.1k  
1000pF  
I
SGND  
V
FB  
TH  
SYNC/MODE  
POWER LOSS  
820pF  
10  
69.8k  
392k  
115k  
3412A F01a  
1
0.01  
0.1  
1
10  
LOAD CURRENT (A)  
Figure 1. 2.5V/3A Step-Down Regulator  
3412afb  
1
LTC3412A  
W W U W  
ABSOLUTE AXI U RATI GS  
(Note 1)  
Input Supply Voltage ...................................0.3V to 6V  
ITH, RUN/SS, VFB, PGOOD,  
SYNC/MODE Voltages .................................. –0.3 to VIN  
SW Voltages ................................. –0.3V to (VIN + 0.3V)  
Operating Ambient Temperature Range  
(Note 2) .............................................. 40°C to 85°C  
Junction Temperature (Note 5)............................. 125°C  
Lead Temperature (Soldering, 10 sec).................. 300°C  
U
U
U
PI CO FIGURATIO  
TOP VIEW  
TOP VIEW  
1
PV  
IN  
16  
15  
14  
13  
12  
11  
10  
9
SV  
IN  
2
SW  
PGOOD  
16 15 14 13  
3
SW  
I
TH  
RUN/SS  
SGND  
1
2
3
4
12 PGOOD  
4
5
6
7
8
PGND  
PGND  
SW  
V
FB  
17  
11 SV  
IN  
IN  
17  
R
T
PV  
IN  
PV  
10  
9
SYNC/MODE  
RUN/SS  
SW  
SW  
SW  
5
6
7
8
PV  
IN  
SGND  
FE PACKAGE  
UF PACKAGE  
16-LEAD (4mm × 4mm) PLASTIC QFN  
TJMAX = 125°C, θJA = 34°C/W, θJC = 1°C/W  
16-LEAD PLASTIC TSSOP  
EXPOSED PAD IS SGND (PIN 17) MUST BE SOLDERED TO PCB  
TJMAX = 125°C, θJA = 38°C/W, θJC = 10°C/W  
EXPOSED PAD (PIN 17) IS GND, MUST BE CONNECTED TO PCB  
U
W
U
ORDER I FOR ATIO  
LEAD FREE FINISH  
LT3412AEFE#PBF  
LT3412AIFE#PBF  
LT3412AEUF#PBF  
LEAD BASED FINISH  
LT3412AEFE  
TAPE AND REEL  
LT3412AEFE#TRPBF  
LT3412AIFE#TRPBF  
LT3412AEUF#TRPBF  
TAPE AND REEL  
LT3412AEFE#TR  
LT3412AIFE#TR  
PART MARKING  
PACKAGE DESCRIPTION  
TEMPERATURE RANGE  
3412AEFE  
3412AIFE  
3412A  
PART MARKING  
3412AEFE  
3412AIFE  
3412A  
16-Lead Plastic TSSOP  
16-Lead Plastic TSSOP  
40°C to 85°C  
40°C to 125°C  
40°C to 85°C  
TEMPERATURE RANGE  
40°C to 85°C  
40°C to 125°C  
40°C to 85°C  
16-Lead (4mm x 4mm) Plastic QFN  
PACKAGE DESCRIPTION  
16-Lead Plastic TSSOP  
LT3412AIFE  
LT3412AEUF  
16-Lead Plastic TSSOP  
16-Lead (4mm x 4mm) Plastic QFN  
LT3412AEUF#TR  
Consult LTC Marketing for parts specified with wider operating temperature ranges.  
For more information on lead free part marking, go to: http://www.linear.com/leadfree/  
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/  
3412afb  
2
LTC3412A  
ELECTRICAL CHARACTERISTICS  
The denotes the specifications which apply over the full operating  
temperature range, otherwise specifications are at TA = 25°C. VIN = 3.3V unless otherwise specified.  
SYMBOL  
SV  
PARAMETER  
CONDITIONS  
MIN  
2.25  
TYP  
MAX  
5.5  
UNITS  
V
Signal Input Voltage Range  
Regulated Feedback Voltage  
Voltage Feedback Leakage Current  
Reference Voltage Line Regulation  
Output Voltage Load Regulation  
IN  
V
I
(Note 3)  
0.784  
0.800  
0.1  
0.816  
0.2  
V
FB  
μA  
%/V  
FB  
ΔV  
FB  
V
= 2.7V to 5.5V (Note 3)  
IN  
0.04  
0.2  
V
Measured in Servo Loop, V = 0.36V  
Measured in Servo Loop, V = 0.84V  
0.02  
0.02  
0.2  
0.2  
%
%
LOADREG  
ITH  
ITH  
ΔV  
PGOOD  
Power Good Range  
7.5  
9
%
R
PGOOD  
Power Good Pull-Down Resistance  
120  
200  
Ω
I
Input DC Bias Current  
Active Current  
Sleep  
(Note 4)  
Q
V
V
V
= 0.78V, V = 1V  
250  
64  
0.02  
330  
80  
1
μA  
μA  
μA  
FB  
FB  
RUN  
ITH  
= 1V, V = 0V  
ITH  
Shutdown  
= 0V, V  
= 0V  
MODE  
f
f
Switching Frequency  
R
= 294kΩ  
0.88  
0.3  
1
1.1  
4
MHz  
MHz  
OSC  
OSC  
Switching Frequency Range  
(Note 6)  
SYNC Capture Range  
(Note 6)  
0.3  
4
MHz  
mΩ  
mΩ  
A
SYNC  
R
R
R
R
of P-Channel FET  
of N-Channel FET  
I
I
= 1A (Note 7)  
77  
65  
6
110  
90  
PFET  
NFET  
DS(ON)  
DS(ON)  
SW  
SW  
= –1A (Note 7)  
I
Peak Current Limit  
4.5  
LIMIT  
V
I
Undervoltage Lockout Threshold  
SW Leakage Current  
RUN Threshold  
1.75  
2
2.25  
1
V
UVLO  
V
= 0V, V = 5.5V  
0.1  
0.65  
μA  
V
LSW  
RUN  
IN  
V
0.5  
0.8  
1
RUN  
RUN  
I
RUN/SS Leakage Current  
μA  
Note 1: Stresses beyond those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. Exposure to any Absolute  
Maximum Rating condition for extended periods may affect device  
reliability and lifetime.  
Note 3: The LTC3412A is tested in a feedback loop that adjusts V to  
FB  
achieve a specified error amplifier output voltage (I ).  
TH  
Note 4: Dynamic supply current is higher due to the internal gate charge  
being delivered at the switching frequency.  
Note 2: The LTC3412AE is guaranteed to meet performance specifications  
from 0°C to 85°C. Specifications over the 40°C to 85°C operating  
temperature range are assured by design, characterization and correlation  
with statistical process controls. The LTC3412I is guaranteed to meet  
specified performance over the full 40°C to 85°C operating temperature  
range.  
Note 5: T is calculated from the ambient temperature T and power  
J
A
dissipation as follows: LTC3412AFE: T = T + P (38°C/W)  
J
A
D
LTC3412AEUF: T = T + P (34°C/W)  
J
A
D
Note 6: 4MHz operation is guaranteed by design and not production tested.  
Note 7: Switch on resistance is guaranteed by design and test condition in  
the UF package and by final test correlation in the FE package.  
3412afb  
3
LTC3412A  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Efficiency vs Load Current, Burst  
Mode Operation  
Efficiency vs Load Current,  
Forced Continuous Operation  
Efficiency vs Load Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 3.3V  
V
= 3.3V  
IN  
IN  
Burst Mode  
OPERATION  
V
= 5V  
V
= 5V  
IN  
IN  
FORCED  
CONTINUOUS  
V
V
= 3.3V  
IN  
OUT  
V
= 2.5V  
V
OUT  
= 2.5V  
= 2.5V  
OUT  
FIGURE 4 CIRCUIT  
FIGURE 4 CIRCUIT  
FIGURE 4 CIRCUIT  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
0.01  
0.1  
1 10  
LOAD CURRENT (A)  
LOAD CURRENT (A)  
LOAD CURRENT (A)  
3412A GO1  
3412A GO2  
3412A GO3  
Load Regulation  
Efficiency vs Input Voltage  
Efficiency vs Frequency  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
94  
92  
90  
88  
86  
84  
82  
80  
96  
95  
94  
93  
92  
91  
90  
89  
88  
87  
FIGURE 4 CIRCUIT  
= 3.3V  
FIGURE 4 CIRCUIT  
FIGURE 4 CIRCUIT  
= 3.3V  
V
IN  
V
IN  
1μH  
0.22μH  
0.47μH  
1A  
0.1A  
3A  
3.0  
3.5  
INPUT VOLTAGE (V)  
4.5  
5.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
2.5  
4.0  
0
0.5  
1.5 2.0 2.5 3.0  
FREQUENCY (MHz)  
4.0  
1.0  
3.5  
LOAD CURRENT (A)  
3412A GO6  
3412A GO4  
3412A GO5  
Load Step Transient Burst Mode  
Operation  
Burst Mode Operation  
Output Voltage Ripple  
BURST  
MODE  
20mV/DIV  
V
OUT  
20mV/DIV  
V
OUT  
100mV/DIV  
PULSE  
SKIPPING  
20mV/DIV  
INDUCTOR  
CURRENT  
1A/DIV  
FORCED  
CONTINUOUS  
20mV/DIV  
INDUCTOR  
CURRENT  
2A/DIV  
FIGURE 4 CIRCUIT  
V
V
= 3.3V  
V
V
= 3.3V  
5μs/DIV  
5μs/DIV  
40μs/DIV  
IN  
OUT  
IN  
OUT  
= 2.5V  
= 2.5V  
FIGURE 4 CIRCUIT  
F = 1MHz  
3412A GO7  
3412A GO8  
3412A GO9  
LOAD STEP = 50mA TO 2A  
FIGURE 4 CIRCUIT  
3412afb  
4
LTC3412A  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Load Step Transient Forced  
Continuous  
Start-Up Transient  
VREF vs Temperature  
0.7975  
0.7970  
0.7965  
0.7960  
0.7955  
0.7950  
0.7945  
0.7940  
0.7935  
0.7930  
V
= 3.3V  
IN  
V
OUT  
2V/DIV  
V
OUT  
100mV/DIV  
RUN/SS  
2V/DIV  
INDUCTOR  
CURRENT  
2A/DIV  
INDUCTOR  
CURRENT  
2A/DIV  
115  
–45 –25  
15 35 55  
TEMPERATURE (°C)  
95  
V
V
= 3.3V  
OUT  
F = 1MHz  
40μs/DIV  
V
V
= 3.3V  
1ms/DIV  
–5  
75  
IN  
IN  
=2.5V  
=2.5V  
OUT  
LOAD STEP = 2A  
3412A G10  
3412A G11  
3412A G12  
LOAD STEP = 0A TO 3A  
FIGURE 4 CIRCUIT  
FIGURE 4 CIRCUIT  
Switch Leakage Current vs  
Input Voltage  
Switch On-Resistance vs  
Temperature  
Switch On-Resistance vs  
Input Voltage  
50  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
120  
100  
80  
60  
40  
20  
0
V
= 3.3V  
IN  
45  
40  
35  
30  
25  
20  
15  
10  
5
PFET  
NFET  
PFET  
NFET  
PFET  
NFET  
4.5 5.0  
INPUT VOLTAGE (V)  
0
2.5  
3.0  
4.0  
5.5  
3.5  
40  
40  
TEMPERATURE (°C)  
80 100  
120  
– 20  
0
20  
60  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
INPUT VOLTAGE (V)  
3412A G15  
3412A G14  
3412A G13  
Frequency vs ROSC  
Frequency vs Input Voltage  
Frequency vs Temperature  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
1060  
1050  
1040  
1030  
1020  
1010  
1000  
990  
1020  
1015  
1010  
1005  
1000  
995  
V
= 3.3V  
OSC  
V
IN  
= 3.3V  
R
OSC  
= 294k  
IN  
R
= 294k  
990  
985  
980  
975  
0
970  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
40 140 240 340 440 540 640 740 840 940  
(kΩ)  
–40  
40  
TEMPERATURE (°C)  
80 100  
120  
–20  
0
20  
60  
INPUT VOLTAGE (V)  
R
OSC  
3412A G17  
3412A G16  
3412A G18  
3412afb  
5
LTC3412A  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Quiescent Current vs  
Temperature  
Minimum Peak Inductor Current  
vs Burst Clamp Voltage  
Quiescent Current vs  
Input Voltage  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
V
IN  
= 3.3V  
ACTIVE  
ACTIVE  
SLEEP  
80  
SLEEP  
0
0
0
0.6  
20  
0
20 40 60  
100 120  
0.1  
0.2  
0.3  
0.4  
0.5  
0.7  
40  
2.5  
3.5  
4.0  
4.5  
5.0  
5.5  
3.0  
V
(V)  
INPUT VOLTAGE (V)  
TEMPERATURE (°C)  
BURST  
3412A G21  
3412A G20  
3412A G19  
Peak Current vs Input Voltage  
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
4.75  
2.25  
2.75  
3.25  
3.75  
4.25  
INPUT VOLTAGE (V)  
3412A G22  
3412afb  
6
LTC3412A  
U
U
U
PI FU CTIO S  
(FE Package/UHF Package)  
RUN/SS (Pin 7/Pin 1): Run Control and Soft-Start Input.  
Forcing this pin below 0.5V shuts down the LTC3412A. In  
shutdown all functions are disabled drawing < 1μA of  
supplycurrent.Acapacitortogroundfromthispinsetsthe  
ramp time to full output current.  
SVIN (Pin 1/Pin 11): Signal Input Supply. Decouple this  
pin to SGND with a capacitor.  
PGOOD (Pin 2/Pin 12): Power Good Output. Open-drain  
logic output that is pulled to ground when the output  
voltage is not within 7.5% of regulation point.  
SGND (Pin 8/Pin 2): Signal Ground. All small-signal  
components,compensationcomponentsandtheexposed  
pad on the bottom side of the IC should connect to this  
ground, which in turn connects to PGND at one point.  
ITH (Pin 3/Pin 13): Error Amplifier Compensation Point.  
The current comparator threshold increases with this  
control voltage. Nominal voltage range for this pin is from  
0.2V to 1.4V with 0.4V corresponding to the zero-sense  
voltage (zero current).  
PVIN(Pins9,16/Pins3,10):PowerInputSupply.Decouple  
this pin to PGND with a capacitor.  
V
FB (Pin 4/Pin 14): Feedback Pin. Receives the feedback  
SW (Pins 10, 11, 14, 15/Pins 4, 5, 8, 9): Switch Node  
ConnectiontotheInductor.Thispinconnectstothedrains  
of the internal main and synchronous power MOSFET  
switches.  
voltage from a resistive divider connected across the  
output.  
RT (Pin 5/Pin 15): Oscillator Resistor Input. Connecting a  
resistor to ground from this pin sets the switching fre-  
quency.  
PGND (Pins 12, 13/Pins 6, 7): Power Ground. Connect  
this pin close to the (–) terminal of CIN and COUT  
.
SYNC/MODE (Pin 6/Pin 16): Mode Select and External  
ClockSynchronizationInput. Toselectforcedcontinuous,  
tietoSVIN.Connectingthispintoavoltagebetween0Vand  
1V selects Burst Mode operation with the burst clamp set  
to the pin voltage.  
Exposed Pad (Pin 17/Pin 17): Signal Ground. Must be  
soldered to PCB for electrical connection and rated ther-  
mal performance.  
3412afb  
7
LTC3412A  
U
U
W
FUNCTIONAL BLOCK DIAGRA  
PV  
IN  
SV  
SGND  
8
I
TH  
3
IN  
1
9
16  
SLOPE  
COMPENSATION  
RECOVERY  
PMOS CURRENT  
COMPARATOR  
VOLTAGE  
REFERENCE  
0.8V  
BCLAMP  
+
+
+
P-CH  
4
V
FB  
ERROR  
AMPLIFIER  
BURST  
COMPARATOR  
+
SYNC/MODE  
+
0.74V  
10  
SLOPE  
11  
14  
15  
COMPENSATION  
OSCILLATOR  
SW  
+
RUN/SS  
PGOOD  
7
2
RUN  
0.86V  
N-CH  
LOGIC  
+
NMOS  
CURRENT  
COMPARATOR  
+
REVERSE  
CURRENT  
COMPARATOR  
12  
13  
PGND  
5
6
3412 FBD  
R
SYNC/MODE  
T
U
OPERATIO  
Main Control Loop  
the ITH pin by comparing the feedback signal from a  
resistor divider on the VFB pin with an internal 0.8V  
reference. When the load current increases, it causes a  
reduction in the feedback voltage relative to the reference.  
The error amplifier raises the ITH voltage until the average  
inductor current matches the new load current. When the  
top power MOSFET shuts off, the synchronous power  
switch (N-channel MOSFET) turns on until either the  
bottomcurrentlimitisreachedorthebeginningofthenext  
clock cycle. The bottom current limit is set at –1.3A for  
forcedcontinuousmodeand0AforBurstModeoperation.  
The LTC3412A is a monolithic, constant-frequency, cur-  
rent-mode step-down DC/DC converter. During normal  
operation, the internal top power switch (P-channel  
MOSFET)isturnedonatthebeginningofeachclockcycle.  
Current in the inductor increases until the current com-  
parator trips and turns off the top power MOSFET. The  
peak inductor current at which the current comparator  
shuts off the top power switch is controlled by the voltage  
on the ITH pin. The error amplifier adjusts the voltage on  
3412afb  
8
LTC3412A  
U
OPERATIO  
The operating frequency is externally set by an external  
resistor connected between the RT pin and ground. The  
practical switching frequency can range from 300kHz to  
4MHz.  
switched back on. This process repeats at a rate that is  
dependent on the load demand.  
Pulse Skipping operation is implemented by connecting  
the SYNC/MODE pin to ground. This forces the burst  
clamp level to be at 0V. As the load current decreases, the  
peak inductor current will be determined by the voltage on  
theITH pinuntiltheITH voltagedropsbelow400mV. Atthis  
point, the peak inductor current is determined by the  
minimum on-time of the current comparator. If the load  
demand is less than the average of the minimum on-time  
inductor current, switching cycles will be skipped to keep  
the output voltage in regulation.  
Overvoltage and undervoltage comparators will pull the  
PGOOD output low if the output voltage comes out of  
regulation by 7.5%. In an overvoltage condition, the top  
powerMOSFETisturnedoffandthebottompowerMOSFET  
is switched on until either the overvoltage condition clears  
or the bottom MOSFET’s current limit is reached.  
Forced Continuous Mode  
Connecting the SYNC/MODE pin to SVIN will disable Burst  
Mode operation and force continuous current operation.  
At light loads, forced continuous mode operation is less  
efficient than Burst Mode operation, but may be desirable  
in some applications where it is necessary to keep switch-  
ing harmonics out of a signal band. The output voltage  
ripple is minimized in this mode.  
Frequency Synchronization  
The internal oscillator of the LTC3412A can be synchro-  
nized to an external clock connected to the SYNC/MODE  
pin. Thefrequencyoftheexternalclockcanbeintherange  
of 300kHz to 4MHz. For this application, the oscillator  
timing resistor should be chosen to correspond to a  
frequency that is 25% lower than the synchronization  
frequency. During synchronization, the burst clamp is set  
to 0V, and each switching cycle begins at the falling edge  
of the clock signal.  
Burst Mode Operation  
Connecting the SYNC/MODE pin to a voltage in the range  
of 0V to 1V enables Burst Mode operation. In Burst Mode  
operation, the internal power MOSFETs operate intermit-  
tently at light loads. This increases efficiency by minimiz-  
ing switching losses. During Burst Mode operation, the  
minimum peak inductor current is externally set by the  
voltage on the SYNC/MODE pin and the voltage on the ITH  
pin is monitored by the burst comparator to determine  
when sleep mode is enabled and disabled. When the  
average inductor current is greater than the load current,  
the voltage on the ITH pin drops. As the ITH voltage falls  
below 150mV, the burst comparator trips and enables  
sleep mode. During sleep mode, the top power MOSFET is  
held off and the ITH pin is disconnected from the output of  
the error amplifier. The majority of the internal circuitry is  
also turned off to reduce the quiescent current to 64μA  
while the load current is solely supplied by the output  
capacitor. When the output voltage drops, the ITH pin is  
reconnectedtotheoutputoftheerroramplifierandthetop  
power MOSFET along with all the internal circuitry is  
Dropout Operation  
When the input supply voltage decreases toward the  
output voltage, the duty cycle increases toward the maxi-  
mum on-time. Further reduction of the supply voltage  
forces the main switch to remain on for more than one  
cycle eventually reaching 100% duty cycle. The output  
voltage will then be determined by the input voltage minus  
the voltage drop across the internal P-channel MOSFET  
and the inductor.  
Low Supply Operation  
The LTC3412A is designed to operate down to an input  
supply voltage of 2.25V. One important consideration  
at low input supply voltages is that the RDS(ON) of the  
P-channel and N-channel power switches increases. The  
user should calculate the power dissipation when the  
LTC3412A is used at 100% duty cycle with low input  
voltages to ensure that thermal limits are not exceeded.  
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Although frequencies as high as 4MHz are possible, the  
minimum on-time of the LTC3412A imposes a minimum  
limit on the operating duty cycle. The minimum on-time is  
typically 110ns; therefore, the minimum duty cycle is  
equal to 100 • 110ns • f(Hz).  
Slope Compensation and Inductor Peak Current  
Slope compensation provides stability in constant fre-  
quency architectures by preventing subharmonic oscilla-  
tions at duty cycles greater than 50%. It is accomplished  
internally by adding a compensating ramp to the inductor  
current signal at duty cycles in excess of 40%. Normally,  
the maximum inductor peak current is reduced when  
slope compensation is added. In the LTC3412A, however,  
slope compensation recovery is implemented to keep the  
maximum inductor peak current constant throughout the  
range of duty cycles. This keeps the maximum output  
current relatively constant regardless of duty cycle.  
Inductor Selection  
For a given input and output voltage, the inductor value  
and operating frequency determine the ripple current. The  
ripple current ΔIL increases with higher VIN or VOUT and  
decreases with higher inductance.  
VOUT  
fL  
VOUT  
V ⎠  
IN  
ΔIL =  
1–  
Short-Circuit Protection  
Having a lower ripple current reduces the core losses in  
the inductor, the ESR losses in the output capacitors, and  
the output voltage ripple. Highest efficiency operation is  
achieved at low frequency with small ripple current. This,  
however, requires a large inductor.  
A reasonable starting point for selecting the ripple current  
is ΔIL = 0.4(IMAX). The largest ripple current occurs at the  
highest VIN. To guarantee that the ripple current stays  
below a specified maximum, the inductor value should be  
chosen according to the following equation:  
Whentheoutputisshortedtoground,theinductorcurrent  
decays very slowly during a single switching cycle. To  
prevent current runaway from occurring, a secondary  
current limit is imposed on the inductor current. If the  
inductor valley current increases larger than 4.4A, the top  
powerMOSFETwillbeheldoffandswitchingcycleswillbe  
skipped until the inductor current is reduced.  
The basic LTC3412A application circuit is shown  
in Figure 1. External component selection is determined  
by the maximum load current and begins with the selec-  
tion of the operating frequency and inductor value fol-  
⎞ ⎛  
⎟ ⎜  
VOUT  
fΔI  
VOUT  
L =  
1–  
lowed by CIN and COUT  
.
V
L(MAX) ⎠ ⎝  
IN(MAX)  
Operating Frequency  
The inductor value will also have an effect on Burst Mode  
operation. The transition to low current operation begins  
when the peak inductor current falls below a level set by  
the burst clamp. Lower inductor values result in higher  
ripple current which causes this to occur at lower load  
currents. This causes a dip in efficiency in the upper range  
of low current operation. In Burst Mode operation, lower  
inductance values will cause the burst frequency to in-  
crease.  
Selection of the operating frequency is a tradeoff between  
efficiency and component size. High frequency operation  
allows the use of smaller inductor and capacitor values.  
Operation at lower frequencies improves efficiency by  
reducing internal gate charge losses but requires larger  
inductance values and/or capacitance to maintain low  
output ripple voltage.  
The operating frequency of the LTC3412A is determined  
by an external resistor that is connected between pin RT  
andground.Thevalueoftheresistorsetstherampcurrent  
that is used to charge and discharge an internal timing  
capacitor within the oscillator and can be calculated by  
using the following equation:  
Inductor Core Selection  
Once the value for L is known, the type of inductor must be  
selected. Actual core loss is independent of core size for a  
fixed inductor value, but it is very dependent on the  
inductance selected. As the inductance increases, core  
losses decrease. Unfortunately, increased inductance re-  
quires more turns of wire and therefore copper losses will  
3.08 1011  
ROSC  
=
Ω – 10kΩ  
( )  
f
increase.  
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Ferritedesignshaveverylowcorelossesandarepreferred  
at high switching frequencies, so design goals can con-  
centrate on copper loss and preventing saturation. Ferrite  
core material saturates “hard,” which means that induc-  
tance collapses abruptly when the peak design current is  
exceeded. This results in an abrupt increase in inductor  
ripple current and consequent output voltage ripple. Do  
not allow the core to saturate!  
Different core materials and shapes will change the size/  
current and price/current relationship of an inductor.  
Toroid or shielded pot cores in ferrite or permalloy mate-  
rials are small and don’t radiate much energy, but gener-  
ally cost more than powdered iron core inductors with  
similar characteristics. The choice of which style inductor  
to use mainly depends on the price verus size require-  
ments and any radiated field/EMI requirements. New  
designs for surface mount inductors are available from  
Coiltronics, Coilcraft, Toko, and Sumida.  
control loop is stable. Loop stability can be checked by  
viewing the load transient response as described in a later  
section. The output ripple, ΔVOUT, is determined by:  
1
ΔVOUT ≤ ΔIL ESR +  
8fCOUT  
The output ripple is highest at maximum input voltage  
since ΔIL increases with input voltage. Multiple capacitors  
placedinparallelmaybeneededtomeettheESRandRMS  
currenthandlingrequirements.Drytantalum,specialpoly-  
mer, aluminum electrolytic, and ceramic capacitors are all  
available in surface mount packages. Special polymer  
capacitors offer very low ESR but have lower capacitance  
density than other types. Tantalum capacitors have the  
highest capacitance density but it is important to only use  
types that have been surge tested for use in switching  
power supplies. Aluminum electrolytic capacitors have  
significantly higher ESR, but can be used in cost-sensitive  
applications provided that consideration is given to ripple  
current ratings and long term reliability. Ceramic capaci-  
tors have excellent low ESR characteristics but can have a  
high voltage coefficient and audible piezoelectric effects.  
The high Q of ceramic capacitors with trace inductance  
can also lead to significant ringing.  
CIN and COUT Selection  
The input capacitance, CIN, is needed to filter the trapezoi-  
dal wave current at the source of the top MOSFET. To  
preventlargevoltagetransientsfromoccurring,alowESR  
input capacitor sized for the maximum RMS current  
should be used. The maximum RMS current is given by:  
Using Ceramic Input and Output Capacitors  
VOUT  
V
IN  
V
IN  
VOUT  
IRMS = IOUT(MAX)  
– 1  
Higher values, lower cost ceramic capacitors are now  
becoming available in smaller case sizes. Their high ripple  
current, high voltage rating and low ESR make them ideal  
for switching regulator applications. However, care must  
be taken when these capacitors are used at the input and  
output. When a ceramic capacitor is used at the input and  
thepowerissuppliedbyawalladapterthroughlongwires,  
a load step at the output can induce ringing at the input,  
VIN. At best, this ringing can couple to the output and be  
mistaken as loop instability. At worst, a sudden inrush of  
current through the long wires can potentially cause a  
voltage spike at VIN large enough to damage the part.  
This formula has a maximum at VIN = 2VOUT, where  
IRMS = IOUT/2. This simple worst-case condition is com-  
monlyusedfordesignbecauseevensignificantdeviations  
do not offer much relief. Note that ripple current ratings  
from capacitor manufacturers are often based on only  
2000 hours of life which makes it advisable to further  
derate the capacitor, or choose a capacitor rated at a  
higher temperature than required. Several capacitors may  
also be paralleled to meet size or height requirements in  
the design. For low input voltage applications, sufficient  
bulk input capacitance is needed to minimize transient  
effects during output load changes.  
When choosing the input and output ceramic capacitors,  
choose the X5R or X7R dielectric formulations. These  
dielectrics have the best temperature and voltage charac-  
teristics of all the ceramics for a given value and size.  
The selection of COUT is determined by the effective series  
resistance (ESR) that is required to minimize voltage  
ripple and load step transients as well as the amount of  
bulk capacitance that is necessary to ensure that the  
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Output Voltage Programming  
IBURST is determined by the desired amount of output  
voltage ripple. As the value of IBURST increases, the sleep  
period between pulses and the output voltage ripple in-  
crease. The burst clamp voltage, VBURST, can be set by a  
resistordividerfromtheVFB pintotheSGNDpinasshown  
in Figure 1.  
The output voltage is set by an external resistive divider  
according to the following equation:  
R2  
R1  
VOUT = 0.8V 1+  
Pulse skipping, which is a compromise between low  
output voltage ripple and efficiency, can be implemented  
byconnectingpinSYNC/MODEtoground.ThissetsIBURST  
to0A. Inthiscondition, thepeakinductorcurrentislimited  
by the minimum on-time of the current comparator. The  
lowest output voltage ripple is achieved while still operat-  
ing discontinuously. During very light output loads, pulse  
skipping allows only a few switching cycles to be skipped  
while maintaining the output voltage in regulation.  
The resistive divider allows pin VFB to sense a fraction of  
the output voltage as shown in Figure 2.  
V
OUT  
R2  
V
FB  
LTC3412A  
SGND  
R1  
3412A F02  
Frequency Synchronization  
Figure 2. Setting the Output Voltage  
TheLTC3412A’sinternaloscillatorcanbesynchronizedto  
an external clock signal. During synchronization, the top  
MOSFET turn-on is locked to the falling edge of the  
externalfrequencysource.Thesynchronizationfrequency  
range is 300kHz to 4MHz. Synchronization only occurs if  
the external frequency is greater than the frequency set  
by the external resistor. Because slope compensation is  
generated by the oscillator’s RC circuit, the external  
frequency should be set 25% higher than the frequency  
set by the external resistor to ensure that adequate slope  
compensation is present.  
Burst Clamp Programming  
IfthevoltageontheSYNC/MODEpinislessthanVIN by1V,  
Burst Mode operation is enabled. During Burst Mode  
Operation, the voltage on the SYNC/MODE pin determines  
the burst clamp level, which sets the minimum peak  
inductor current, IBURST. To select the burst clamp level,  
use the graph of Minimum Peak Inductor Current vs Burst  
Clamp Voltage in the Typical Performance Characteristics  
section.  
VBURST is the voltage on the SYNC/MODE pin. IBURST can  
only be programmed in the range of 0A to 6A. For values  
of VBURST greater than 1V, IBURST is set at 6A. For values  
of VBURST less than 0.4V, IBURST is set at 0A. As the output  
load current drops, the peak inductor currents decrease to  
keep the output voltage in regulation. When the output  
load current demands a peak inductor current that is less  
than IBURST, the burst clamp will force the peak inductor  
current to remain equal to IBURST regardless of further  
reductions in the load current. Since the average inductor  
current is greater than the output load current, the voltage  
on the ITH pin will decrease. When the ITH voltage drops  
to 150mV, sleep mode is enabled in which both power  
MOSFETs are shut off along with most of the circuitry to  
minimize power consumption. All circuitry is turned back  
on and the power MOSFETs begin switching again when  
the output voltage drops out of regulation. The value for  
Soft-Start  
The RUN/SS pin provides a means to shut down the  
LTC3412A as well as a timer for soft-start. Pulling the  
RUN/SS pin below 0.5V places the LTC3412A in a low  
quiescent current shutdown state (IQ < 1μA).  
The LTC3412A contains an internal soft-start clamp that  
gradually raises the clamp on ITH after the RUN/SS pin is  
pulled above 2V. The full current range becomes available  
on ITH after 1024 switching cycles. If a longer soft-start  
period is desired, the clamp on ITH can be set externally  
with a resistor and capacitor on the RUN/SS pin as shown  
in Figure 1. The soft-start duration can be calculated by  
using the following formula:  
V
IN  
tSS = RSS CSS ln  
(SECONDS)  
V – 1.8V⎠  
IN  
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Efficiency Considerations  
The efficiency of a switching regulator is equal to the  
output power divided by the input power times 100%. It is  
oftenusefultoanalyzeindividuallossestodeterminewhat  
is limiting the efficiency and which change would produce  
the most improvement. Efficiency can be expressed as:  
U
curves. To obtain I2R losses, simply add RSW to RL and  
multiply the result by the square of the average output  
current.  
Other losses including CIN and COUT ESR dissipative  
losses and inductor core losses generally account for less  
than 2% of the total loss.  
Efficiency = 100% – (L1 + L2 + L3 + ...)  
Thermal Considerations  
whereL1, L2, etc. aretheindividuallossesasapercentage  
of input power.  
In most applications, the LTC3412A does not dissipate  
much heat due to its high efficiency.  
Although all dissipative elements in the circuit produce  
losses, two main sources usually account for most of the  
losses: VIN quiescent current and I2R losses.  
However, in applications where the LTC3412A is running  
at high ambient temperature with low supply voltage and  
high duty cycles, such as in dropout, the heat dissipated  
may exceed the maximum junction temperature of the  
part. If the junction temperature reaches approximately  
150°C, both power switches will be turned off and the SW  
node will become high impedance.  
The VIN quiescent current loss dominates the efficiency  
loss at very low load currents whereas the I2R loss  
dominates the efficiency loss at medium to high load  
currents. In a typical efficiency plot, the efficiency curve at  
very low load currents can be misleading since the actual  
power lost is of no consequence.  
To avoid the LTC3412A from exceeding the maximum  
junction temperature, the user will need to do some  
thermal analysis. The goal of the thermal analysis is to  
determine whether the power dissipated exceeds the  
maximum junction temperature of the part. The tempera-  
ture rise is given by:  
1. The VIN quiescent current is due to two components:  
theDCbiascurrentasgivenintheelectricalcharacteristics  
and the internal main switch and synchronous switch gate  
charge currents. The gate charge current results from  
switching the gate capacitance of the internal power  
MOSFET switches. Each time the gate is switched from  
high to low to high again, a packet of charge dQ moves  
from VIN to ground. The resulting dQ/dt is the current out  
of VIN that is typically larger than the DC bias current. In  
continuous mode, IGATECHG = f(QT + QB) where QT and QB  
are the gate charges of the internal top and bottom  
switches. Both the DC bias and gate charge losses are  
proportional to VIN; thus, their effects will be more pro-  
nounced at higher supply voltages.  
tr = (PD)(θJA)  
where PD is the power dissipated by the regulator and θJA  
is the thermal resistance from the junction of the die to the  
ambient temperature. For the 16-lead exposed TSSOP  
package, the θJA is 38°C/W. For the 16-lead QFN package  
the θJA is 34°C/W.  
The junction temperature, TJ, is given by:  
TJ = TA + tr  
2. I2R losses are calculated from the resistances of the  
internal switches, RSW, and external inductor RL. In con-  
tinuous mode the average output current flowing through  
inductor L is “chopped” between the main switch and the  
synchronous switch. Thus, the series resistance looking  
into the SW pin is a function of both top and bottom  
MOSFET RDS(ON) and the duty cycle (DC) as follows:  
where TA is the ambient temperature.  
Note that at higher supply voltages, the junction tempera-  
ture is lower due to reduced switch resistance (RDS(ON)).  
To maximize the thermal performance of the LTC3412A,  
the exposed pad should be soldered to a ground plane.  
Checking Transient Response  
The regulator loop response can be checked by looking at  
the load transient response. Switching regulators take  
several cycles to respond to a step in load current.  
RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 – DC)  
The RDS(ON) for both the top and bottom MOSFETs can be  
obtained from the Typical Performance Characteristics  
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When a load step occurs, VOUT immediately shifts by an  
Decoupling the PVIN and SVIN pins with two 22μF capaci-  
tors is adequate for most applications.  
amount equal to ΔI  
, where ESR is the effective  
LOAD(ESR)  
series resistance of COUT. ΔILOAD also begins to charge or  
dischargeCOUT generatingafeedbackerrorsignalusedby  
the regulator to return VOUT to its steady-state value.  
During this recovery time, VOUT can be monitored for  
overshoot or ringing that would indicate a stability prob-  
lem. The ITH pin external components and output capaci-  
tor shown in Figure 1 will provide adequate compensation  
for most applications.  
The burst clamp and output voltage can now be pro-  
grammed by choosing the values of R1, R2, and R3. The  
voltage on pin MODE will be set to 0.50V by the resistor  
divider consisting of R2 and R3. According to the graph of  
Minimum Peak Inductor Current vs Burst Clamp Voltage  
intheTypicalPerformanceCharacteristicssection,aburst  
clamp voltage of 0.5V will set the minimum inductor  
current, IBURST, to approximately 1.1A.  
Design Example  
If we set the sum of R2 and R3 to 185k, then the following  
equations can be solved:  
As a design example, consider using the LTC3412A in an  
application with the following specifications:  
R2 + R3 = 185k  
VIN = 3.3V, VOUT = 2.5V, IOUT(MAX) = 3A,  
IOUT(MIN) = 100mA, f = 1MHz.  
R2 0.8V  
R3 0.50V  
1+  
=
Because efficiency is important at both high and low load  
current, Burst Mode operation will be utilized.  
The two equations shown above result in the following  
values for R2 and R3: R2 = 69.8k , R3 = 115k. The value  
of R1 can now be determined by solving the following  
equation.  
First, calculate the timing resistor:  
3.081011  
ROSC  
=
– 10k = 298k  
R1  
2.5V  
1•106  
1+  
=
185k 0.8V  
Use a standard value of 294k. Next, calculate the inductor  
value for about 40% ripple current at maximum VIN:  
R1= 392k  
A value of 392k will be selected for R1. Figure 4 shows the  
complete schematic for this design example.  
2.5V  
2.5V  
3.3V  
L =  
1–  
= 0.51μH  
(1MHz)(1.2A)  
PC Board Layout Checklist  
Using a 0.47μH inductor results in a maximum ripple  
current of:  
When laying out the printed circuit board, the following  
checklist should be used to ensure proper operation of the  
LTC3412A. Check the following in your layout:  
2.5V  
2.5V  
3.3V  
ΔIL =  
1–  
= 1.29A  
(1MHz)(0.47μH)  
1. Agroundplaneisrecommended. Ifagroundplanelayer  
is not used, the signal and power grounds should be  
segregated with all small signal components returning to  
the SGND pin at one point which is then connected to the  
PGND pin close to the LTC3412A.  
COUT will be selected based on the ESR that is required to  
satisfy the output voltage ripple requirement and the bulk  
capacitance needed for loop stability. For this design, two  
100μF ceramic capacitors will be used.  
CIN should be sized for a maximum current rating of:  
2. Connect the (+) terminal of the input capacitor(s), CIN,  
as close as possible to the PVIN pin. This capacitor  
provides the AC current into the internal power MOSFETs.  
2.5V 3.3V  
IRMS = (3A)  
– 1 = 1.29ARMS  
3.3V 2.5V  
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3. Keep the switching node, SW, away from all sensitive  
small signal nodes.  
5. Connect the VFB pin directly to the feedback resistors.  
The resistor divider must be connected between VOUT  
and SGND.  
4. Flood all unused areas on all layers with copper.  
Flooding with copper will reduce the temperature rise of  
power components. You can connect the copper areas to  
any DC net (PVIN, SVIN, VOUT, PGND, SGND, or any other  
DC rail in your system).  
Bottom  
Top  
Figure 3. LTC3412A Layout Diagram  
V
IN  
3.3V  
C
FF  
22pF X5R  
R1 392k  
C
IN3  
**  
100μF  
C
IN1  
22μF  
1
16  
SV  
IN  
PV  
IN  
R
PG  
100k  
2
3
15  
14  
13  
12  
11  
10  
9
PGOOD  
PGOOD  
SW  
SW  
R
C
ITH  
330pF X7R  
ITH  
17.4k  
I
TH  
C
C
LTC3412A  
EFE  
47pF  
L1*  
0.47μH  
PGND  
PGND  
SW  
V
2.5V  
3A  
4
5
OUT  
V
FB  
R2  
69.8k  
R3  
115k  
R
T
R
OSC  
294k  
SYNC/MODE  
6
7
R
SS  
2.2M  
C
**  
OUT  
100μF  
RUN  
SW  
C
×2  
SS  
1000pF X7R  
8
SGND  
PV  
IN  
C
IN2  
22μF  
GND  
X5R 6.3V  
3412 F04  
*VISHAY IHLP-2525CZ-01  
**TDK 4532X5R0J107M  
Figure 4. 3.3V to 2.5V, 3A Regulator at 1MHz, Burst Mode Operation  
3412afb  
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TYPICAL APPLICATIO S  
1.2V, 3A, 1.5MHz 1mm Height Regulator Using All Ceramic Capacitors  
V
IN  
3.3V  
C1 22pF X5R  
R1 95.3k  
C
IN1  
10μF  
11  
10  
SV  
IN  
PV  
IN  
X5R 6.3V  
R
PG  
100k  
12  
13  
9
8
7
6
5
4
3
PGOOD  
1000pF X7R  
PGOOD  
SW  
SW  
R
ITH  
C
ITH  
6.34k  
I
TH  
C
C
LTC3412A  
EUF  
22pF  
L1*  
PGND  
PGND  
SW  
0.47μH  
V
1.2V  
3A  
14  
15  
OUT  
V
FB  
R2  
187k  
R
T
R
196k  
OSC  
16  
1
C
**  
OUT  
R
SS  
SYNC/MODE  
RUN  
22μF  
2.2M  
X3  
SW  
C
SS  
1000pF X7R  
2
SGND  
PV  
IN  
C
IN2  
10μF  
X5R 6.3V  
GND  
3412 TA01  
*COOPER SD10-R47  
**TAIYO YUDEN AMK212BJ226MD-B  
1.8V, 3A Step-Down Regulator at 1MHz, Burst Mode Operation  
V
IN  
2.5V  
C1 47pF X5R  
C
**  
IN3  
100μF  
R1 232k  
C
IN1  
1
16  
22μF  
SV  
IN  
PV  
IN  
X5R 6.3V  
R
PG  
100k  
2
3
15  
14  
13  
12  
11  
10  
9
PGOOD  
PGOOD  
SW  
SW  
R
C
ITH  
820pF X7R ITH  
15k  
I
TH  
C2  
LTC3412A  
EFE  
47pF  
L1  
0.47μH*  
PGND  
PGND  
SW  
V
4
5
OUT  
1.8V  
3A  
V
FB  
R2  
R3  
115k  
69.8k  
R
T
R
294k  
OSC  
C
**  
OUT  
6
7
R
100μF  
SS  
SYNC/MODE  
RUN  
2.2M  
×3  
SW  
C
SS  
1000pF X7R  
8
SGND  
PV  
IN  
C
IN2  
22μF  
X5R 6.3V  
GND  
3412 TA02  
*VISHAY IHLP-2525CZ-01  
**TDK C4532X5R0J107M  
3412afb  
16  
LTC3412A  
U
TYPICAL APPLICATIO S  
3.3V, 3A Step-Down Regulator at 2MHz, Forced Continuous Mode Operation  
V
IN  
5V  
C
**  
IN3  
C1 22pF X5R  
R1 634k  
100μF  
C
IN1  
22μF  
1
16  
SV  
PV  
IN  
X5R 6.3V  
IN  
R
PG  
100k  
2
3
4
15  
14  
13  
12  
11  
10  
9
PGOOD  
PGOOD  
SW  
SW  
R
ITH  
C
ITH  
820pF X7R  
7.5k  
I
TH  
C
C
LTC3412A  
EFE  
47pF  
L1*  
0.47μH  
PGND  
PGND  
SW  
V
3.3V  
3A  
OUT  
V
FB  
R2  
200k  
5
R
T
R
137k  
OSC  
6
7
C
**  
OUT  
SYNC/MODE  
RUN  
100μF  
×2  
SW  
C
R
SS  
SS  
1000pF X7R  
2.2M  
8
SGND  
PV  
IN  
C
IN2  
22μF  
X5R 6.3V  
GND  
3412 TA03  
*VISHAY IHLP-2525CZ-01  
**TDK C4532X5R0J107M  
2.5V, 3A Step-Down Regulator Synchronized to 1.8MHz  
V
IN  
3.3V  
C1 22pF X5R  
R1 392k  
C
IN1  
22μF  
1
16  
SV  
IN  
PV  
IN  
X5R 6.3V  
R
PG  
100k  
2
3
15  
14  
13  
12  
11  
10  
9
PGOOD  
PGOOD  
SW  
SW  
R
ITH  
C
ITH  
220pF X7R  
6.49k  
I
TH  
LTC3412A  
EFE  
C
C
22pF  
L1*  
PGND  
PGND  
SW  
0.47μH  
V
1.5V  
3A  
4
5
OUT  
V
FB  
R2 162k  
182k  
R
T
R
OSC  
+
6
7
C
**  
1.8MHz  
EXT CLOCK  
OUT  
R
SS  
SYNC/MODE  
RUN  
150μF  
2.2M  
SW  
C
SS  
1000pF X7R  
8
SGND  
PV  
IN  
C
IN2  
22μF  
X5R 6.3V  
GND  
3412 TA04  
*COOPER SD20-R47  
**SANYO POSCAP 4TPE150MAZB  
3412afb  
17  
LTC3412A  
U
PACKAGE DESCRIPTIO  
FE Package  
16-Lead Plastic TSSOP (4.4mm)  
(Reference LTC DWG # 05-08-1663)  
Exposed Pad Variation BA  
4.90 – 5.10*  
(.193 – .201)  
2.74  
(.108)  
2.74  
(.108)  
16 1514 13 12 1110  
9
6.60 0.10  
4.50 0.10  
2.74  
(.108)  
6.40  
(.252)  
BSC  
SEE NOTE 4  
2.74  
(.108)  
0.45 0.05  
1.05 0.10  
0.65 BSC  
5
7
8
1
2
3
4
6
RECOMMENDED SOLDER PAD LAYOUT  
1.10  
(.0433)  
MAX  
4.30 – 4.50*  
(.169 – .177)  
0.25  
REF  
0° – 8°  
0.65  
(.0256)  
BSC  
0.09 – 0.20  
(.0035 – .0079)  
0.50 – 0.75  
(.020 – .030)  
0.05 – 0.15  
(.002 – .006)  
0.195 – 0.30  
FE16 (BA) TSSOP 0204  
(.0077 – .0118)  
TYP  
NOTE:  
1. CONTROLLING DIMENSION: MILLIMETERS 4. RECOMMENDED MINIMUM PCB METAL SIZE  
FOR EXPOSED PAD ATTACHMENT  
*DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH  
SHALL NOT EXCEED 0.150mm (.006") PER SIDE  
MILLIMETERS  
(INCHES)  
2. DIMENSIONS ARE IN  
3. DRAWING NOT TO SCALE  
3412afb  
18  
LTC3412A  
U
PACKAGE DESCRIPTIO  
UF Package  
16-Lead Plastic QFN (4mm × 4mm)  
(Reference LTC DWG # 05-08-1692)  
0.72 0.05  
4.35 0.05  
2.90 0.05  
2.15 0.05  
(4 SIDES)  
PACKAGE OUTLINE  
0.30 0.05  
0.65 BSC  
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS  
BOTTOM VIEW—EXPOSED PAD  
PIN 1 NOTCH R = 0.20 TYP  
OR 0.35 × 45° CHAMFER  
0.75 0.05  
R = 0.115  
TYP  
4.00 0.10  
(4 SIDES)  
15  
16  
0.55 0.20  
PIN 1  
TOP MARK  
(NOTE 6)  
1
2
2.15 0.10  
(4-SIDES)  
(UF16) QFN 10-04  
0.200 REF  
0.30 0.05  
0.65 BSC  
0.00 – 0.05  
NOTE:  
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)  
2. DRAWING NOT TO SCALE  
3. ALL DIMENSIONS ARE IN MILLIMETERS  
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE  
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE  
5. EXPOSED PAD SHALL BE SOLDER PLATED  
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION  
ON THE TOP AND BOTTOM OF PACKAGE  
3412afb  
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.  
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-  
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.  
19  
LTC3412A  
RELATED PARTS  
PART NUMBER  
DESCRIPTION  
COMMENTS  
LTC1878  
600mA (I ), 550kHz, Synchronous Step-Down DC/DC Converter 96% Efficiency, V : 2.7V to 6V, V  
: 0.8V, I : 10μA,  
OUT  
IN  
OUT(MIN)  
Q
I
: <1μA, MS8 Package  
SD  
LTC1879  
1.20A (I ), 550kHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, V : 2.7V to 10V, V  
: 0.8V, I : 15μA,  
OUT  
IN  
OUT(MIN)  
Q
I
: <1μA, TSSOP16 Package  
SD  
LT1934/LT1934-1  
LTC3404  
300mA (I ), Constant Off-Time, High Efficiency Step-Down  
DC/DC Converter  
90% Efficiency, V : 3.2V to 34V, V  
I : <1μA, ThinSOT Package  
SD  
: 1.25V, I : 14μA,  
OUT  
IN  
OUT(MIN)  
Q
600mA (I ), 1.4MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, V : 2.7V to 6V, V  
: 0.8V, I : 10μA,  
OUT  
IN  
OUT(MIN)  
Q
I
: <1μA, MS8 Package  
SD  
LTC3405/LTC3405A 300mA (I ), 1.5MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, V : 2.5V to 5.5V, V  
: 0.8V, I : 20μA,  
OUT  
IN  
OUT(MIN)  
Q
I
: <1μA, ThinSOT Package  
SD  
LTC3406/LTC3406B 600mA (I ), 1.5MHz, Synchronous Step-Down DC/DC Converter 96% Efficiency, V : 2.5V to 5.5V, V  
: 0.6V, I : 20μA,  
OUT  
IN  
OUT(MIN)  
OUT(MIN)  
Q
I
: <1μA, ThinSOT Package  
SD  
LTC3407  
LTC3411  
LTC3412  
LTC3413  
LTC3414  
LTC3416  
LTC3418  
LT3430  
Dual 600mA (I ), 1.5MHz, Synchronous Step-Down  
DC/DC Converter  
95% Efficiency, V : 2.5V to 5.5V, V  
I : <1μA, MS10E, 3mm x 3mm DFN Packages  
SD  
: 0.6V, I : 40μA,  
OUT  
IN  
Q
1.25A (I ), 4MHz, Synchronous Step-Down DC/DC Converter  
95% Efficiency, V : 2.5V to 5.5V, V  
: 0.8V, I : 60μA,  
Q
OUT  
IN  
OUT(MIN)  
I
: <1μA, MS10, 3mm x 3mm DFN Packages  
SD  
2.5A (I ), 4MHz, Synchronous Step-Down DC/DC Converter  
95% Efficiency, V : 2.5V to 5.5V, V  
: 0.8V, I : 60μA,  
Q
OUT  
IN  
OUT(MIN)  
I
: <1μA, TSSOP16E Package  
SD  
3A (I  
Sink/Source), 2MHz, Monolithic Synchronous Regulator 90% Efficiency, V : 2.25V to 5.5V, V  
: V  
,
OUT  
IN  
OUT(MIN) REF/2  
for DDR/QDR Memory Termination  
I : 280μA, I : <1μA, TSSOP16E Package  
Q SD  
4A (I ), 4MHz, Synchronous Step-Down DC/DC Converter  
95% Efficiency, V : 2.25V to 5.5V, V  
: 0.8V, I : 64μA,  
OUT  
IN  
OUT(MIN)  
OUT(MIN)  
OUT(MIN)  
Q
I
: <1μA, TSSOP20E Package  
SD  
4A (I ), 4MHz, Synchronous Step-Down DC/DC Converter  
95% Efficiency, V : 2.25V to 5.5V, V  
: 0.8V, I : 64μA,  
OUT  
IN  
Q
I
: <1μA, TSSOP20E Package  
SD  
8A (I ), 4MHz, Synchronous Step-Down DC/DC Converter  
95% Efficiency, V : 2.25V to 5.5V, V  
: 0.8V, I : 380μA,  
OUT  
IN  
Q
I
: <1μA, QFN Package  
SD  
60V, 2.75A (I ), 200kHz, High Efficiency Step-Down  
90% Efficiency, V : 5.5V to 60V, V  
: 1.20V, I : 2.5mA,  
OUT(MIN) Q  
OUT  
IN  
DC/DC Converter  
I : 25μA, TSSOP16E Package  
SD  
LTC3440  
LTC3441  
LTC3548  
600mA (I ), 2MHz, Synchronous Buck-Boost  
DC/DC Converter  
95% Efficiency, V : 2.5V to 5.5V, V : 2.5V to 5.5V,  
OUT  
IN  
OUT  
I : 25μA, I : <1μA, DFN Package  
Q
SD  
1.2A (I ), 1MHz, Synchronous Buck-Boost  
95% Efficiency, V : 2.4V to 5.5V, V : 2.4V to 5.25V,  
OUT  
IN  
OUT  
DC/DC Converter  
I : 25μA, I : <1μA, DFN Package  
Q
SD  
400mA/800mA Dual Synchronous Step-Down DC/DC Converter  
95% Efficiency, V : 2.5V to 5.5V, V  
: 0.6V,  
IN  
OUT(MIN)  
I < 40μA, I : <1μA, MS8E, DFN Packages  
Q
SD  
ThinSOT is a trademark of Linear Technology Corporation.  
3412afb  
LT 0807 REV B • PRINTED IN USA  
20 LinearTechnology Corporation  
1630 McCarthy Blvd., Milpitas, CA 95035-7417  
(408) 432-1900 FAX: (408) 434-0507 www.linear.com  
© LINEAR TECHNOLOGY CORPORATION 2005  

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