H11D1M [LITEON]
Property of Lite-On Only; 精简版，关于财产只有
| 型号： | H11D1M |
| 厂家： | 
LITE-ON TECHNOLOGY CORPORATION |
| 描述： | Property of Lite-On Only |
| 文件： | 总9页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* Current transfer ratio
( CTR : MIN. 20% at IF = 10mA, VCE = 10V )
* High isolation voleage between input and output
( Viso = 5,000 Vrms )
* Very High collector-emitter breakdown voltage
( BVCER = 300V)
* Dual-in-line package :
H11D1 : 1-channel type
* Wide lead spacing package :
H11D1M : 1-channel type
* Surface mounting package :
H11D1S : 1-channel type
* Tape and reel packaging :
H11D1S-TA1
* UL approved ( No. E113898 )
* VDE approved ( No. 094722 )
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
Page : 1 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
H11D1 :
H11D1M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
Page : 2 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
H11D1S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
Page : 3 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
H11D1S-TA1 :
Description
Symbol
W
Dimensions in mm ( inches )
16 ± 0.3 ( .63 )
Tape wide
Pitch of sprocket holes
P0
4 ± 0.1 ( .15 )
F
P2
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
Distance of compartment
Distance of compartment to compartment
P1
12 ± 0.1 ( .472 )
Part No. : H11D1 ( M, S, S-TA1 )
Page : 4 of 9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
SYMBOL
IF
RATING
UNIT
Forward Current
60
mA
V
INPUT
Reverse Voltage
VR
6
100
Power Dissipation
P
mW
V
Collector - Emitter Voltage
Emitter - Base Voltage
Collector - Base Voltage
Emitter - Collector Voltage
Collector Current
VCEO
VEBO
VCBO
VECO
IC
300
7
V
300
V
OUTPUT
7
V
100
mA
mW
mW
Vrms
°C
Collector Power Dissipation
PC
150
Total Power Dissipation
Ptot
250
*1 Isolation Voltage
Operating Temperature
Storage Temperature
Viso
Topr
Tstg
5,000
-55 ~ +100
-55 ~ +150
260
°C
*2 Soldering Temperature
Tsol
°C
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : H11D1 ( M, S, S-TA1 )
Page : 5 of 9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
Forward Voltage
SYMBOL MIN. TYP. MAX. UNIT
CONDITIONS
IF = 10mA
VF
IR
—
—
—
1.2
0.01
30
1.5
10
V
INPUT
Reverse Current
VR = 6V
µA
Terminal Capacitance
Ct
250
pF V=0, f = 1KHz
VCE=200V
nA
Collector Dark Current
ICER
—
300
7
—
—
—
100
—
RBE=1MΩ
IC=0.1mA, IF=0
RBE=1MΩ
Collector-Emitter
Breakdown Voltage
OUTPUT
BVCER
BVECO
V
Emitter-Collector
Breakdown Voltage
IE=10µA
IF=0
—
V
Collector Current
IC
2
—
—
—
—
mA
IF=10mA,VCE=10V
RBE=1MΩ
*1
Current Transfer Ratio
CTR
20
%
IF=10mA,IC=0.5mA
RBE=1MΩ
Collector-Emitter
Saturation Voltage
VCE(sat)
—
0.25
—
0.4
—
V
TRANSFER
CHARACTERISTICS
DC500V
Ω
Isolation Resistance
Riso
5x1010
40 ~ 60% R.H.
Floating Capacitance
Turn - on Time
Cf
t on
t off
—
—
—
0.6
5
—
—
—
pF V=0, f=1MHz
µs
VCC=10V, IC=2mA
RL=100Ω
Turn - off Time
5
µs
IC
CTR = ×100%
*1
IF
Part No. : H11D1 ( M, S, S-TA1 )
Page : 6 of 9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs.
Ambient Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
100
80
60
40
20
0
200
150
100
50
0
-55 -25
0
25 50 75 100 125
-55 -25
0
25 50 75 100 125
Ambient temperature Ta (oC)
Ambient temperature Ta (oC)
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
Fig.4 Forward Current vs. Forward
Voltage
6
100
Ic= 0.5mA
1mA
5
100oC
80oC
3mA
5mA
40oC
20oC
4
3
60oC
7mA
10
2
1
0
1
0
2
4
6
8
10 12 14 16 18 20
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
Forward voltage (V)
Forward current IF (mA)
Fig.5 Output Current vs.
Forward Current Curve
Fig.6 Collector Current vs.
Collector-emitter Voltage
10.00
30
IF= 10mA
VCE= 10V
RBE= 1M
PC (MAX.)
25mA
25
20
15
10
5
I = 30mA
F
20mA
1.00
0.10
0.01
15mA
10mA
5mA
0
1
2
5
10 20
50 100
0
2
4
6
8
10
Forward current IF (mA)
Collector-emitter voltage VCE(V)
Part No. : H11D1 ( M, S, S-TA1 )
Page : 7 of 9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
1.2
0.12
IF= 10mA
IF= 20mA
VCE= 10V
IC= 1mA
1.0
0.10
0.8
0.6
0.4
0.2
0
0.08
0.06
0.04
0.02
0.00
20
40
60
80
100
20
40
60
80
100
O
O
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs.
Ambient Temperature
Fig.10 Response Time vs. Load
Resistance
1000
100
VCE= 2V
VCE= 200V
IC= 2mA
100
10
1
10
tf
tr
td
ts
1
20
40
60
80
100
0.1
1
10
O
Ambient temperature Ta ( C)
Load resistance RL(k
)
Fig.11 Frequency Response
Test Circuit for Response Time
Input
Vcc
0
Output
RL
VCE= 5V
IC= 2mA
-1
10%
90%
Output
Input
RD
-2
-3
RL= 10k
-4
1k
100
ts
td
tr
tf
-5
-6
Test Circuit for Frequency Response
-7
Vcc
-8
-9
RL
RD
Output
-10
1
10
100
500
Frequency f (kHz)
Part No. : H11D1 ( M, S, S-TA1 )
Page : 8 of 9
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
H11D1 ( M, S, S-TA1 )
9 of 9
Part No. :
Page :
BNS-OD-C131/A4
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