SBG2040CT [LITEON]
SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器型号: | SBG2040CT |
厂家: | LITE-ON TECHNOLOGY CORPORATION |
描述: | SCHOTTKY BARRIER RECTIFIERS |
文件: | 总2页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LITE-ON
SEMICONDUCTOR
SBG2030CT thru 2045CT
- 30 45
to
REVERSE VOLTAGE
FORWARD CURRENT
Volts
SCHOTTKY BARRIER RECTIFIERS
- 20
Amperes
FEATURES
D2 PAK
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
D 2 PAK
MIN.
9.65
14.60
8.25
1.14
K
High current capability, low VF
I
MAX.
10.69
15.88
9.25
1.40
1.14
2.79
2.79
2.92
1.40
0.64
4.83
A
DIM.
High surge capacity
A
B
C
D
E
F
G
H
I
K
D
Plastic package has UL flammability classification 94V-0
C
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
K
1
2
0.51
F
2.29
G
MECHANICAL DATA
2.29
2.03
H
E
J
Case : D PAK molded plastic
Polarity : 2As marked on the body
Weight : 0.06 ounces, 1.7 grams
1.14
J
0.30
PIN 1
PIN 2
K
4.37
K
HEATSINK All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
UNIT
SBG2030CT
SBG2035CT
SBG2040CT
SBG2045CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
30
21
30
35
24.5
35
40
28
40
45
31.5
45
RRM
RMS
V
V
V
V
V
Maximum DC Blocking Voltage
DC
V
Maximum Average Forward
Rectified Current (See Fig.1)
(AV)
FSM
I
A
20
C
=
@T 105 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
A
I
225
Maximum Forward Voltage
at 10A DC (Note 1)
V
F
V
0.55
Maximum DC Reverse Current
at Rated DC Blocking Voltage
1.0
50
J
@T =25 C
J
R
mA
pF
I
@T =100 C
Typical Junction Capacitance
per element (Note 2)
350
J
C
Typical Thermal Resistance (Note 3)
R
0JC
2.0
C/W
C
-55 to +125
Operating Temperature Range
J
T
Storage Temperature Range
STG
T
-55 to +150
C
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
REV. 2, 01-Dec-2000, KTHB08
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Typical Thermal Resistance Junction to Case.
RATING AND CHARACTERISTIC CURVES
SBG2030CT thru SBG2045CT
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
30
300
250
200
150
100
20
10
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
50
0
RESISTIVE OR INDUCTIVE LOAD
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
100
100
TJ = 100 C
TJ = 25 C
10
10
TJ = 75 C
1.0
1.0
0.1
0.1
PULSE WIDTH 300us
2% Duty Cycle
TJ = 25 C
0.01
140
20
40
60
80
100
120
0
1.4
1.6
0.2
0.4
0.6
0.8
1.0
1.2
1.8
0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
TJ = 25 C, f= 1MHz
1
100
0.1
100
4
10
REVERSE VOLTAGE , VOLTS
REV. 2, 01-Dec-2000, KTHB08
相关型号:
SBG2040CT-13
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, PLASTIC, D2PAK-3
DIODES
©2020 ICPDF网 联系我们和版权申明