1KSMBJ75CA [LITTELFUSE]
1000W Surface Mount Transient Voltage Suppressor; 1000W表面贴装型瞬态电压抑制器
| 型号： | 1KSMBJ75CA |
| 厂家： | 
LITTELFUSE |
| 描述： | 1000W Surface Mount Transient Voltage Suppressor |
| 文件： | 总4页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
®
RoHS
1KSMBJ Series
The 1KSMBJ range of surface mount protectors utilizes the
proven glass passivated technology used in many Littelfuse
product portfolios. Rated at 1000 watts (10 x 1000 µs double
exponential waveform), the 1KSMBJ bridges the gap left by
traditional types rated at 600 watts and 1500 watts, suiting
many applications where both power handling and size are
paramount. The extremely fast turn-on time (less than one pico
second), coupled with the low clamping factor and low on-state
impedance, make this range ideal for the protection of today’s
circuits. Our specially selected range of voltages has been
chosen to fulfill optimum protection for use in automotive and
telecom applications.
FEATURES
• RoHS Compliant
• Available in breakdown voltages from 6.8v. to 160v;
specially designed for automotive applications
.
-12
• Response time: 1x10
secs (theoretical)
• Glass passivated junction
Mechanical Specifications:
Weight:
Case:
0.093 grammes (approx)
• Offers high-surge rating in compact package: bridges the
gap between 600W and 1.5KW
DO-214AA Outline moulded plastic over
glass passivated junction. UL 94 V-0 rated
Solderable to MIL-STD-750 Method 2026
23°C for 10 seconds
• Forward surge rating:
100A 8.3ms single half sine wave
Terminals:
Solderable Leads:
Marking:
• 100% tested
Cathode band, device code logo
Standard Packaging: Supplied on reels of 3000 pieces. Tape
width 12mm. Follows requirements of
EIA 481-1
• Operating temperature: -55°C to +150°C
Agency Approvals: Recognized under the Components Program
of Underwriters Laboratories.
Agnecy File Numbers: E128662
ORDERING INFORMATION
C A
SMBJ
Voltage
Bi-Directional
5%Voltage Tolerance
Tape and reeled (3000 pcs)
270
www. lit t elf us e. c om
Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
®
RoHS
1KSMBJ Series
ELECTRICAL SPECIFICATION @ Tamb 25°C
Breakdow n
Voltage
VBR (Volts) @ IT
Reverse
Stand Off
Voltage
VR
Maximum
Reverse
Leakage
IR @ VR
(µA)
Maximum
Clamping
Voltage
VC @ IPP
(Volts)
Maximum
Peak Pulse
Current
IPP
Part
Number
Device
Code
(Volts)
(A)
I
(mA)
MIN
MAX
T
1KSMBJ 6.8
1KSMBJ 6.8A
1KSMBJ 7.5
1KSMBJ 7.5A
1KSMBJ 8.2
1KSMBJ 8.2A
1KSMBJ 9.1
1KSMBJ 9.1A
1KSMBJ 10
1KSMBJ 10A
1KSMBJ 11
1KSMBJ 11A
1KSMBJ 12
1KSMBJ 12A
1KSMBJ 13
1KSMBJ 13A
1KSMBJ 15
1KSMBJ 15A
1KSMBJ 16
1KSMBJ 16A
1KSMBJ 18
1KSMBJ 18A
1KSMBJ 20
1KSMBJ 20A
1KSMBJ 22
1KSMBJ 22A
1KSMBJ 24
1KSMBJ 24A
1KSMBJ 27
1KSMBJ 27A
1KSMBJ 30
1KSMBJ 30A
1KSMBJ 33
1KSMBJ 33A
1KSMBJ 36
1KSMBJ 36A
N10A
N10B
N10C
N10D
N10E
N10F
N10G
N10H
N10I
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.80
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
7.46
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1000.0 (4)
1000.0 (4)
500.0 (4)
500.0 (4)
200.0 (4)
200.0 (4)
50.0 (4)
50.0 (4)
10.0 (4)
10.0 (4)
5.0 (4)
5.0 (4)
5.0 (4)
5.0
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
92.5
95.0
85.0
88.3
80.0
83.3
73.3
75.0
66.7
68.3
61.7
63.3
58.3
60.0
53.3
55.0
45.0
46.7
43.3
45.0
38.0
40.0
35.0
36.7
31.7
33.3
28.3
30.0
25.5
26.7
22.9
24.0
21.0
22.0
19.2
20.0
6
N10J
N10K
N10L
N10M
N10N
N10O
N10P
N10Q
N10R
N10S
N10T
N10U
N10V
N10W
N10X
N10Y
N10Z
O10A
O10B
O10C
O10D
O10E
O10F
O10G
O10H
O10I
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
O10J
5.0
Notes:
1. All testing is performed at Tamb = 25˚C (+/- 3˚C)
2. Bv is measured using a pulse of 20 milliseconds or less
3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts
4. Peak Pulse Current is quoted @ 10/1000 µsec
5. All parameters are stated as tested on a FET Tester Model 3400
6. Devices are uni-directional. Vf is not specified.
271
www. lit t elf us e. c om
Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
®
RoHS
1KSMBJ Series
ELECTRICAL SPECIFICATION @ Tamb 25°C
Breakdow n
Voltage
VBR (Volts) @ IT
Maximum
Reverse
Leakage
IR @ VR
(µA)
Maximum
Clamping
Voltage
VC @ IPP
(Volts)
Maximum
Peak Pulse
Current
IPP
Device
Code
Part
Number
Reverse
Stand Off
Voltage
VR
I
(mA)
(A)
(Volts)
MIN
MAX
T
1KSMBJ 39
O10K
O10L
O10M
O10N
O10O
O10P
O10Q
O10R
O10S
O10T
O10U
O10V
O10W
O10X
O10Y
O10Z
P10A
P10B
P10C
P10D
P10E
P10F
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105.0
108.0
114.0
117.0
124.0
135.0
143.0
144.0
152.0
42.9
41.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
56.4
53.9
17.5
18.7
16.0
16.8
14.8
15.5
13.7
14.3
12.3
13.0
11.3
11.8
10.2
10.8
9.2
1KSMBJ 39A
1KSMBJ 43
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
47.3
61.9
1KSMBJ 43A
1KSMBJ 47
45.2
59.3
51.7
67.8
1KSMBJ 47A
1KSMBJ 51
49.4
64.8
56.1
73.5
1KSMBJ 51A
1KSMBJ 56
53.6
70.1
61.6
80.5
1KSMBJ 56A
1KSMBJ 62
58.8
77.0
68.2
89.0
1KSMBJ 62A
1KSMBJ 68
65.1
85.0
74.8
98.0
1KSMBJ 68A
1KSMBJ 75
71.4
92.0
82.5
108.0
103.0
118.0
113.0
131.0
125.0
144.0
137.0
158.0
152.0
173.0
165.0
187.0
179.0
215.0
207.0
230.0
219.0
1KSMBJ 75A
1KSMBJ 82
78.8
9.7
90.2
8.5
1KSMBJ 82A
1KSMBJ 91
86.1
8.8
100.0
95.5
7.5
1KSMBJ 91A
1KSMBJ 100
1KSMBJ 100A
1KSMBJ 110
1KSMBJ 110A
1KSMBJ 120
1KSMBJ 120A
1KSMBJ 130
1KSMBJ 130A
1KSMBJ 150
1KSMBJ 150A
1KSMBJ 160
1KSMBJ 160A
8.0
110.0
105.0
121.0
116.0
132.0
126.0
143.0
137.0
165.0
158.0
176.0
168.0
7.0
7.3
P10G
P10H
P10I
6.3
6.6
5.8
P10J
6.1
P10K
P10L
P10M
P10N
P10O
P10P
5.3
5.6
4.7
4.8
4.3
4.6
Notes:
1. All testing is performed at Tamb = 25˚C (+/- 3˚C)
2. Bv is measured using a pulse of 20 milliseconds or less
3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts
4. Peak Pulse Current is quoted @ 10/1000 µsec
5. All parameters are stated as tested on a FET Tester Model 3400
6. Vf, for uni-directional devices, is measured using a 300 microsecond square wave pulse @ IT = 50A
272
www. lit t elf us e. c om
Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
RoHS
1KSMBJ Series
6
2.16
2.74
2.16
2.26
Solder Pads
All dimensions in mm
273
www. lit t elf us e. c om
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