A2106UC [LITTELFUSE]
Silicon Surge Protector, 50A, MODIFIED MS-013, SOIC-6;
| 型号： | A2106UC |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Surge Protector, 50A, MODIFIED MS-013, SOIC-6 |
| 文件： | 总2页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Balanced Three-chip SIDACtor Device
Balanced Three-chip SIDACtor Device
This balanced protector is a surface mount alternative to the modified TO-220 package.
1
2
3
6
5
4
Based on a six-pin surface mount SOIC package, it uses Teccor’s patented “Y”
(US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A.
SIDACtor devices are used to enable equipment to meet various regulatory requirements
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968
(formerly known as FCC Part 68).
Electrical Parameters
VDRM
VS
VDRM
Volts
VS
Volts
Volts
Volts
Part
VT
IDRM
IS
IT
IH
CO
pF
Number *
Pins 1-3, 1-4
Pins 3-4
Volts
µAmps mAmps Amps mAmps
P1553U_
P1803U_
P2103U_
P2353U_
P2703U_
P3203U_
P3403U_
P5103U_
A2106U_ **
A5030U_ **
130
150
170
200
230
270
300
420
170
400
180
210
250
270
300
350
400
600
250
550
130
150
170
200
230
270
300
420
50
180
210
250
270
300
350
400
600
80
8
8
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
5
5
800
800
800
800
800
800
800
800
800
800
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
150
150
150
150
150
150
150
150
120
150
40
40
40
40
30
30
30
30
40
30
270
350
* For individual “UA”, “UB”, and “UC” surge ratings, see table below.
** Asymmetrical
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.
I
PP is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
DRM is measured at IDRM.
VS is measured at 100 V/µs.
Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.
Off-state capacitance is measured between Pins 1-3 and 1-4 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”
and “UC” capacitance is approximately 2x higher.
•
Device is designed to meet balance requirements of GTS 8700 and GR 974.
Surge Ratings
IPP
IPP
IPP
IPP
IPP
ITSM
60 Hz
Amps
2x10 µs
8x20 µs
10x160 µs
10x560 µs
10x1000 µs
di/dt
Series
Amps
Amps
Amps
Amps
Amps
Amps/µs
A
B
C
150
250
500
150
250
400
90
150
200
50
100
150
45
80
100
20
30
50
500
500
500
http://www.teccor.com
+1 972-580-7777
2 - 20
© 2002 Teccor Electronics
®
SIDACtor Data Book and Design Guide
Balanced Three-chip SIDACtor Device
Thermal Considerations
Package
Modified MS-013
Symbol
TJ
TS
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +125
-65 to +150
60
Unit
°C
°C
6
5
4
RqJA
Thermal Resistance: Junction to Ambient
°C/W
1
2
3
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
I
S
I
H
Waveform = tr x td
I
DRM
-V
+V
Half Value
VDRM
VT
VS
0
tr
td
0
t – Time (µs)
-I
V-I Characteristics
tr x td Pulse Wave-form
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-8
0.4
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized VS Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2002 Teccor Electronics
2 - 21
http://www.teccor.com
+1 972-580-7777
®
SIDACtor Data Book and Design Guide
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