B1161UCL [LITTELFUSE]
Single Port Negative SLIC Protector; 单端口负SLIC保护
| 型号： | B1161UCL |
| 厂家： | 
LITTELFUSE |
| 描述： | Single Port Negative SLIC Protector |
| 文件： | 总2页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Battrax® Single Port Negative SLIC Protector
RoHS
This programmable Battrax device is referenced to a negative voltage source. This
dual-chip package includes internal diodes for transient protection from positive surge
events.
(G)
5
For a diagram of a Battrax application, see Figure 6.47 in Section 6, “Reference
Designs” of this Telecom Design Guide.
1
2
3
(R)
(T) (-VREF
)
Electrical Parameters
Part
V
V
V
V
I
I
GT
I
T
I
H
DRM
S
T
F
DRM
Number *
Volts
Volts
Volts
Volts
µAmps
mAmps
Amps
mAmps
B1101U_L
B1161U_L
B1201U_L
|-V
|-V
|-V
| + |-1.2V|
| + |-1.2V|
| + |-1.2V|
|-V
|-V
|-V
| + |-10V|
| + |-10V|
| + |-10V|
4
4
4
5
5
5
5
5
5
100
2.2
100
REF
REF
REF
REF
REF
REF
100
2.2
160
100
2.2
200
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For individual “UA” and “UC” surge ratings, see table below.
General Notes:
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
I
I
is a repetitive surge rating and is guaranteed for the life of the product.
PP
ratings assume a V
= -48 V.
PP
REF
V
V
V
is measured at I
DRM.
is measured at 100 V/µs.
maximum value for the B1101, B1161, and/or B1201 is -200 V.
DRM
S
REF
Surge Ratings in Amps
I
PP
0.2x310 * 2x10 *
8x20 *
10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 *
I
TSM
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
di/dt
Amps/µs
500
Amps
20
Amps
150
Amps
150
Amps
90
Amps
50
Amps
75
Amps
75
Amps
45
Amps
75
Amps
20
A
C
50
500
400
200
150
200
175
100
200
50
500
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 77
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Battrax® Single Port Negative SLIC Protector
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +125
-65 to +150
60
Unit
°C
Modified MS-013
T
J
6
5
4
T
°C
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
1
2
3
Capacitance Values
pF
Part Number
B1101UAL
MIN
MAX
200
200
200
200
200
200
50
50
50
50
50
50
B1101UCL
B1161UAL
B1161UCL
B1201UAL
B1201UCL
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.
O
+I
tr = rise time to peak value
td = decay time to half value
VF
Peak
Value
100
50
0
Waveform = tr x td
VDRM
VS
VT
-V
+V
Half Value
IDRM
IH
IGT
IT
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Waveform
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
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3 - 78
© 2006 Littelfuse • Telecom Design Guide
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