DK208D [LITTELFUSE]
This DK208D 8A, 1200V rated standard recovery rectifier diode in a compact TO-252 surface mount package is ideal as a bypass diode or anti-parallel diode for active switching component;型号: | DK208D |
厂家: | LITTELFUSE |
描述: | This DK208D 8A, 1200V rated standard recovery rectifier diode in a compact TO-252 surface mount package is ideal as a bypass diode or anti-parallel diode for active switching component |
文件: | 总5页 (文件大小:1484K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Teccor® brandThyristors
1200V 8Amp Rectifier
RoHS
DK208D Rectifier Diode
Description
This DK208D 8A, 1200V rated standard recovery rectifier
diode in a compactTO-252 surface mount package is ideal
as a bypass diode or anti-parallel diode for active switching
component.
Features & Benefits
• Standard recovery
• High di/dt capability
rectifier
• Halogen free and RoHS
compliant
• Voltage capability up to
1200V
• 50Hz surge capability up
to 150A
Schematic Symbol
Applications
A
K
Typical applications are high voltage pulse generator using
capacitor discharge such as electric fences and stun guns,
and high voltage DC to DC converter seen in small EV /
E-bike charger systems.
Main Features
Symbol
IT(RMS)
Value
8
Unit
A
VRRM
1200
V
Absolute Maximum Ratings
Test Conditions
Symbol
Parameter
Value
Unit
IF(RMS)
IF(AV)
RMS forward current
12.6
8.0
A
A
TC = 113°C
Average forward current
single half cycle; f = 50Hz;
TJ (initial) = 25°C
150
180
IFSM
Peak non-repetitive surge current
A
single half cycle; f = 60Hz;
TJ (initial) = 25°C
I2t
I2t Value for fusing
tp = 8.3 ms
134
A2s
A/μs
°C
di/dt
Tstg
TJ
Critical rate of rise of on-state current
Storage temperature range
100
f = 50Hz ;TJ = 50°C
-40 to 150
-40 to 150
Operating junction temperature range
°C
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
DK208D rectifier diode
Revised: 05/26/17
Teccor® brandThyristors
1200V 8Amp Rectifier
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Value
Unit
trr
Reverse-recoveryTime
IF=0.9A, IR=1.5A
TYP.
4
μs
Static Characteristics
Symbol
Test Conditions
Value
1.2
Unit
VFM
IT = 8A; tp = 380μs
MAX.
V
TJ = 25°C
20
IRM
VRRM
TJ = 125°C
TJ = 150°C
MAX.
500
1000
μA
Thermal Resistances
Symbol
Parameter
Value
1.4
Unit
Junction to case (AC)
°C/W
Rθ(J-C)
Figure 1: On-State Current vs. On-State
Voltage (Typical)
Figure 2: Power Dissipation vs. Average Forward On-
State Current (Typical)
120
12
10
8
TJ = 25°C
100
80
60
40
20
0
6
4
2
0
0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
2.1
0
2
4
6
8
10
Average Forward Current [IF(AV)] - Amps
Instantaneous Forward Voltage (vF) – Volts
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
DK208D rectifier diode
Revised: 05/26/17
Teccor® brandThyristors
1200V 8Amp Rectifier
Figure 3: Maximum Allowable CaseTemperature vs.
Average On-State Current
150
140
130
120
110
100
90
0
2
4
6
8
10
Average Forward Current [IF(AVE)] - Amps
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
Pre Heat -Temperature Max (Ts(max)
)
200°C
TL
TS(max)
-Time (min to max) (ts)
60 – 180 secs
tL
Average ramp up rate (LiquidusTemp)
(TL) to peak
Ramp-down
5°C/second max
Preheat
TS(min)
TS(max) toTL - Ramp-up Rate
5°C/second max
217°C
tS
-Temperature (TL) (Liquidus)
Reflow
-Time (tL)
60 – 150 seconds
260+0/-5 °C
25
time to peak temperature
Time
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Time 25°C to peakTemperature (TP)
Do not exceed
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
DK208D rectifier diode
Revised: 05/26/17
Teccor® brandThyristors
1200V 8Amp Rectifier
Physical Specifications
Environmental Specifications
Test
Specifications and Conditions
Terminal Finish
Body Material
Lead Material
100% MatteTin Plated
HighTemperature
Voltage Blocking
MIL-STD-750: Method 1040, Condition A
Rated VRRM, 150°C, 168 hours
UL Recognized epoxy meeting flammability
rating V-0
MIL-STD-750: Method 1051
-40°C to 125°C, 15-minute dwell,
100 cycles
Temperature Cycling
Copper Alloy
BiasedTemperature & EIA/JEDEC: JESD22-A101
Humidity
320VDC, 85°C, 85%RH, 168 hours
Design Considerations
MIL-STD-750: Method 1031
150°C, 1008 hours
HighTemp Storage
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
rectifier. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
Low-Temp Storage
1008 hours; -40°C
Resistance to
Solder Heat
MIL-STD-750: Method 2031
260°C, 10 seconds
Solderability
Lead Bend
ANSI/J-STD-002, Category 3, Test A
MIL-STD-750: Method 2036, Condition E
Moisture Sensitivity
Level
Level 1, JEDEC-J-STD-020
Dimensions —TO-252AA (D-Package) — D-PAK Surface Mount
E
6.71
.264
Anode
5.28
.208
TC MEASURING POINT
Inches
Millimeters
Typ
D
Dimension
Min
0.037
0.235
0.106
0.205
0.255
0.027
0.087
0.085
0.176
0.018
0.035
0.018
0.000
0.021
0°
Typ
Max
0.043
0.245
0.113
0.213
0.265
0.033
0.093
0.095
0.184
0.023
0.039
0.023
0.004
0.027
5°
Min
0.94
5.97
2.69
5.21
6.48
0.69
2.21
2.16
4.47
0.46
0.90
0.46
0.00
0.53
0°
Max
1.09
6.22
2.87
5.41
6.73
0.84
2.36
2.41
4.67
0.58
1.00
0.58
0.10
0.69
5°
A
B
6.71
.264
5.34
.210
A
B
C
D
E
F
0.040
0.243
0.108
0.208
0.262
0.031
0.090
0.092
0.179
0.020
0.037
0.020
0.000
0.026
0°
1.01
6.16
2.74
1.60
.063
P
Q
C
1.80
.071
5.29
6.65
0.80
2.28
2.33
4.55
0.51
0.95
0.51
0.00
0.67
0°
GATE
F
AREA: 0.040 IN2
Cathode
Anode
3
.118
4.60
.181
G
I
G
H
I
L
O
H
K
J
M
N
J
K
L
M
N
O
P
Q
0.042
0.034
0.047
0.039
0.052
0.044
1.06
0.86
1.20
1.32
1.11
1.00
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
DK208D rectifier diode
Revised: 05/26/17
Teccor® brandThyristors
1200V 8Amp Rectifier
Packing Option
Part Number
Marking
Weight
Packing Mode
Base Quantity
DK208DRP
DK208D
0.3 g
Embossed Carrier
2500
Part Numbering System
Part Marking System
D K2 08 D
DK208D
PACKAGE TYPE
D: DPAK
DEVICE TYPE
D: Rectifier
VOLTAGE RATING
K2: 1200V
CURRENT RATING
08: 8A
YMLDD
®
Date Code Marking
Y:Year Code
M: Month Code
L: Location Code
DD: Calendar Code
TO-252 Embossed Carrier Reel Pack (RP) Specifications
Meets all EIA-481-2 Standards
0.157
(4.0)
0.059
Dia
(1.5)
Gate
Cathode
0.63
(16.0)
0.524
(13.3)
*
0.315
(8.0)
*
Cover tape
Anode
12.99
(330.0)
0.512 (13.0) Arbor
Hole Dia.
Dimensions
are in inches
(and millimeters).
0.64
(16.3)
Direction of Feed
Disclaimer Noꢀce - Informaꢀon furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applicaꢀons. Liꢁelfuse products are not designed for, and may not be used in, all applicaꢀons.
Read complete Disclaimer Noꢀce at www.liꢁelfuse.com/disclaimier-electronics.
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
DK208D rectifier diode
Revised: 05/26/17
相关型号:
DK208DRP
This DK208D 8A, 1200V rated standard recovery rectifier diode in a compact TO-252 surface mount package is ideal as a bypass diode or anti-parallel diode for active switching component
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