DMA30P1200HB [LITTELFUSE]

Rectifier Diode,;


型号：	DMA30P1200HB
厂家：	LITTELFUSE
描述：	Rectifier Diode, 二极管
文件：	总5页 (文件大小：354K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMA30P1200HB

V_RRM

I_FAV

V_F

2x1200V

30A

Standard Rectifier

1.2V

Phase leg

Part number

DMA30P1200HB

Backside: anode/cathode

TO-247

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Very low leakage current

● Very low forward voltage drop

● Improved thermal behaviour

● High commutation robustness

● High surge capability

● Diode for main rectification

● For single and three phase

bridge configurations

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129b

DMA30P1200HB

Ratings

Rectifier

Symbol

V_RSM

Definition

Conditions

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 150°C

T_VJ= 25°C

1300

1200

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

V_RRM

I_R

reverse current

V_R=1200 V

µA

V_R=1200 V

I_F= 30 A

I_F= 60 A

I_F= 30 A

I_F= 60 A

T_C= 130°C

180° sine

1.5 mA

forward voltage drop

1.26

V_F

1.53

1.20

1.57

T_VJ

°C

150

average forward current

threshold voltage

T_VJ= 175°C

I_FAV

0.81

V_F0

for power loss calculation only

slope resistance

12.7 mΩ

0.8 K/W

K/W

r_F

thermal resistance junction to case

thermal resistance case to heatsink

R_thJC

R_thCH

P_tot

0.3

T_C= 25°C

T_VJ= 45°C

V_R= 0 V

185

370

400

315

340

total power dissipation

max. forward surge current

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

V_R= 400 V; f = 1 MHz

I_FSM

T_VJ= 150°C

V_R= 0 V

value for fusing

T_VJ= 45°C

V_R= 0 V

I²t

685 A²s

665 A²s

495 A²s

480 A²s

T_VJ= 150°C

V_R= 0 V

T_VJ= 25°C

C_J

junction capacitance

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129b

DMA30P1200HB

Ratings

Package TO-247

Symbol

I_RMS

Definition

Conditions

min. typ. max. Unit

per terminal

175

150

°C

RMS current

-55

T_VJ

virtual junction temperature

T_op

operation temperature

storage temperature

T_stg

Weight

0.8

1.2 Nm

120

M_D

mounting torque

mounting force with clip

Product Marking

Part description

D = Diode

M = Standard Rectifier

A = (up to 1800V)

30 = Current Rating [A]

P = Phase leg

1200 = Reverse Voltage [V]

HB = TO-247AD (3)

Logo

IXYS

XXXXXXXXX

yywwZ

Part Number

Date Code

1234

Lot#

Location

Ordering

Ordering Number

Marking on Product

Delivery Mode

Quantity Code No.

30 522386

Standard

DMA30P1200HB

Tube

Similar Part

Package

Voltage class

DMA30P1600HB

TO-247AD (3)

1600

T_VJ=175°C

Equivalent Circuits for Simulation

* on die level

Rectifier

V₀

R₀

threshold voltage

slope resistance *

0.81

10.1

V_{0 max}

R_{0 max}

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129b

DMA30P1200HB

Outlines TO-247

Ø P1

Ø P

Sym.

Inches

min. max.

Millimeter

min.

4.70

2.21

1.50

max.

0.185 0.209

0.087 0.102

0.059 0.098

0.819 0.845

0.610 0.640

0.170 0.216

0.215 BSC

5.30

2.59

2.49

20.79 21.45

15.48 16.24

2x E2

4.31

5.48

5.46 BSC

0.780 0.800

19.80 20.30

Ø P

0.177

4.49

3.65

6.19

0.140 0.144

0.212 0.244

0.242 BSC

3.55

5.38

6.14 BSC

0.039 0.055

0.065 0.094

0.102 0.135

0.015 0.035

0.99

1.65

2.59

0.38

13.07

0.51

13.45

1.40

2.39

3.43

0.89

2x b2

Ø P1

0.515

3x b

0.020 0.053

1.35

0.530

0.29

7.39

2x e

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129b

DMA30P1200HB

Rectifier

10³

50 Hz, 80%V_RRM

V_R= 0 V

300

250

I_F40

T_VJ= 45°C

I²t

[A²s]

I_FSM

[A]

T_VJ= 45°C

T_VJ= 150°C

[A]

T_VJ

= 25°C

200

T_VJ= 125°C

T_VJ= 150°C

10²

150

0.0

0.5

1.0

1.5

2.0

0.001

0.01

0.1

4 5 6 7 8 910

V_F[V]

t [s]

t [ms]

Fig. 3 I²t versus time per diode

Fig. 2 Surge overload current

versus time per diode

Fig. 1 Forward current versus

voltage drop per diode

R_thHA[K/W]

0.6

0.8

1.0

2.0

4.0

8.0

DC =

0.5

0.4

0.33

0.17

0.08

0.4

0.33

0.17

0.08

I_F(AV)M

P_tot

[W]

[A]

100

150

200

100

150

T_C[°C]

I_F(AV)M[A]

T_amb[°C]

Fig. 5 Max. forward current versus

case temperature per diode

Fig. 4 Power dissipation versusdirect output current

and ambient temperature per diode

0.9

0.8

0.7

0.6

Constants for Z_thJCcalculation:

Z_thJC

R_thi(K/W)

t_i(s)

0.5

0.05

0.13

0.25

0.37

0.0006

0.0040

0.0130

0.1100

[K/W]

0.4

0.3

0.2

0.1

100

1000

10000

t [ms]

Fig. 6 Transient thermal impedance junction to case versus time per diode

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129b