DPG60C200HB [LITTELFUSE]
Rectifier Diode, 1 Phase, 2 Element, 30A, 200V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | DPG60C200HB |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 30A, 200V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总5页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DPG60C200HB
VRRM
IFAV
trr
=
=
=
200V
30A
HiPerFRED²
2x
35ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG60C200HB
Backside: cathode
1
2
3
TO-247
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Very soft recovery behaviour
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126b
© 2013 IXYS all rights reserved
DPG60C200HB
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
200
200
1
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current, drain current
VR = 200 V
VR = 200 V
µA
0.1 mA
forward voltage drop
VF
30
1.34
V
V
V
V
A
IF =
A
1.63
1.06
1.39
30
IF = 60 A
IF = 30 A
IF = 60 A
TC = 140°C
rectangular
TVJ
=
°C
150
average forward current
threshold voltage
TVJ = 175°C
TVJ = 175°C
IFAV
d = 0.5
VF0
rF
0.70
V
for power loss calculation only
slope resistance
10.5 mΩ
0.95 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
IFSM
CJ
0.25
TC = 25°C
TVJ = 45°C
TVJ = 25°C
160
360
W
A
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 150 V f = 1 MHz
42
3
pF
A
max. reverse recovery current
IRM
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
7
A
IF = 30 A; VR = 130V
-diF/dt = 200 A/µs
reverse recovery time
trr
35
55
ns
ns
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126b
© 2013 IXYS all rights reserved
DPG60C200HB
Ratings
Package TO-247
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
50
175
Unit
1)
A
°C
°C
°C
g
RMS current
TVJ
-55
-55
-55
virtual junction temperature
operation temperature
storage temperature
150
150
Top
Tstg
Weight
6
MD
0.8
20
1.2 Nm
120
mounting torque
F
N
mounting force with clip
C
Product Marking
Part number
D = Diode
P = HiPerFRED
G = extreme fast
60 = Current Rating [A]
C = Common Cathode
200 = Reverse Voltage [V]
HB = TO-247AD (3)
Logo
IXYS
XXXXXXXXX
Zyyww
Part No.
Assembly Line
abcd
Assembly Code
Date Code
Ordering
Standard
Part Number
Marking on Product
DPG60C200HB
Delivery Mode
Tube
Quantity Code No.
30 506294
DPG60C200HB
Similar Part
DPG60C200QB
DPF60C200HB
DPF60C200HJ
Package
Voltage class
TO-3P (3)
200
200
200
TO-247AD (3)
ISOPLUS247 (3)
TVJ = 175°C
* on die level
Equivalent Circuits for Simulation
Fast
Diode
V0
I
R0
threshold voltage
slope resistance *
V0 max
R0 max
0.7
V
7.9
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126b
© 2013 IXYS all rights reserved
DPG60C200HB
Outlines TO-247
A
D2
E
A2
Ø P1
Ø P
Sym.
Inches
min. max.
Millimeter
S
Q
min.
4.70
2.21
1.50
max.
A
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
5.30
2.59
2.49
A1
A2
D
E
E2
e
D1
D
20.79 21.45
15.48 16.24
2x E2
L1
4
4.31
5.48
5.46 BSC
19.80 20.30
1
2
3
L
0.780 0.800
L1
Ø P
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
-
0.177
-
4.49
3.65
6.19
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
3.55
5.38
E1
6.14 BSC
L
0.99
1.65
2.59
0.38
13.07
0.51
13.45
-
1.40
2.39
3.43
0.89
-
1.35
-
2x b2
0.515
-
C
3x b
0.020 0.053
b4
A1
0.530
-
-
0.29
7.39
2x e
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126b
© 2013 IXYS all rights reserved
DPG60C200HB
Fast Diode
16
14
12
10
8
80
70
60
IF = 60 A
0.4
0.3
0.2
0.1
IF = 60 A
30 A
15 A
30 A
15 A
50
IRM
[A]
IF
TVJ = 150°C
Qrr
40
30
20
10
[A]
6
[μC]
TVJ = 125°C
VR = 130 V
TVJ = 125°C
VR = 130 V
4
25°C
2
0
200
400
600
0
200
400
600
0.0
0.4
0.8
1.2
1.6
2.0
VF [V]
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 1 Forward current
IF versus VF
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
600
500
400
300
200
100
0
12
VFR
TVJ = 125°C
VR = 130 V
tfr
10
8
60
50
40
30
20
tfr
trr
VFR
Kf
6
4
2
0
IF = 60 A
[ns]
[ns]
[V]
30 A
15 A
IRM
TVJ = 125°C
VR = 130 V
IF
= 30 A
Qrr
0
40
80
120
160
0
200
400
600
0
200
400
600
-diF /dt [A/μs]
-diF /dt [A/μs]
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
Fig. 5 Typ. reverse recov, time
trr versus -diF /dt
Fig. 6 Typ. forward recov. voltage
VFR and tfr versus diF /dt
16
14
12
10
1.2
1.0
0.8
0.6
TVJ = 125°C
VR = 130 V
IF = 15 A
ZthJC
30 A
60 A
Erec
8
6
4
2
[K/W]
0.4
[μJ]
Rthi [K/W]
ti [s]
0.1311
0.1377
0.3468
0.2394
0.095
0.0018
0.002
0.012
0.07
0.2
0.0
0.345
0
200
400
600
1
10
100
1000
10000
t [ms]
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126b
© 2013 IXYS all rights reserved
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