DSA240X200NA [LITTELFUSE]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4;
| 型号： | DSA240X200NA |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4 软恢复二极管 局域网 测试 |
| 文件： | 总5页 (文件大小：661K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSA240X200NA
=
VRRM
IFAV
VF
200V
120A
0.87V
Schottky Diode
= 2x
=
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSA240X200NA
Backside: isolated
2
3
1
4
SOT-227B (minibloc)
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
V~
3000
● Low noise switching
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160623b
© 2016 IXYS all rights reserved
DSA240X200NA
Ratings
Schottky
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
200
200
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current, drain current
VR = 200 V
1.5 mA
15 mA
VR = 200 V
IF = 120 A
IF = 240 A
IF = 120 A
IF = 240 A
TC = 95°C
rectangular
forward voltage drop
1.00
V
V
V
V
A
VF
1.26
0.87
1.17
120
TVJ
=
°C
125
average forward current
threshold voltage
TVJ = 150°C
TVJ = 150°C
IFAV
d = 0.5
0.54
V
VF0
for power loss calculation only
slope resistance
2.5 mΩ
0.4 K/W
K/W
rF
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
IFSM
CJ
0.10
902
TC = 25°C
TVJ = 45°C
TVJ = 25°C
310
W
kA
pF
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 24V f = 1 MHz
1.60
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160623b
© 2016 IXYS all rights reserved
DSA240X200NA
Ratings
Package SOT-227B (minibloc)
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
150
150
125
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
30
Weight
1.1
1.1
1.5 Nm
MD
mounting torque
terminal torque
M
1.5 Nm
T
terminal to terminal
terminal to backside
10.5
8.6
3.2
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
6.8
t = 1 second
3000
2500
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Part description
Product Marking
D = Diode
Part No.
S = Schottky Diode
A = low VF
Logo
XXXXX
®
240 = Current Rating [A]
X = Parallel legs
Zyyww
abcd
200 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
Assembly Line
DateCode
Assembly Code
Ordering
Ordering Number
Marking on Product
Delivery Mode
Quantity Code No.
10 511108
Standard
DSA240X200NA
DSA240X200NA
Tube
Similar Part
Package
Voltage class
DSS2x101-02A
SOT-227B (minibloc)
200
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Schottky
V0
I
R0
threshold voltage
slope resistance *
0.54
0.6
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160623b
© 2016 IXYS all rights reserved
DSA240X200NA
Outlines SOT-227B (minibloc)
2
3
1
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160623b
© 2016 IXYS all rights reserved
DSA240X200NA
Schottky
240
10
1
TVJ=150°C
125°C
200
160
IF
100°C
75°C
IR
120
0.1
0.01
[A]
TVJ =
[mA]
25°C
125°C
150°C
80
40
0
50°C
25°C
0.001
0.4
0.8
1.2
0
50
100
150
VF [V]
VR [V]
Fig. 1 Max. forward voltage drop characteristics
Fig. 2 Typ. reverse current I
voltage VR
R
versus reverse
5000
4000
120
0.5
0.33
0.25
CT
3000
[pF]
0.17
0.08
DC
P(AV)
80
40
0
TVJ= 25°C
[W]
2000
1000
0
40
80
120
160
200
0
50
100
150
VR [V]
IF(AV) [A]
Fig. 3 Typ. junction capacitance C
versus reverse voltage VR
T
Fig. 4 Forward power loss characteristics
180
160
140
120
100
0.5
0.4
0.3
0.2
0.1
0.0
ZthJC
IF
DC
d = 0.5
80
60
40
20
0
[A]
[K/W]
Rthi [K/W]
ti [s]
0.06908 0.00128
0.09397 0.01279
0.1128 0.02201
0.1241 0.4439
0
40
80
TC [°C]
120
160
1
10
100
t [ms]
1000
10000
Fig. 5 Average forward current IF(AV) versus
case temperature TC
Fig. 6 Transient thermal impedance
junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160623b
© 2016 IXYS all rights reserved
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