DSP45-12AZ-TUB [LITTELFUSE]
Rectifier Diode, D3PAK-3/2;
| 型号： | DSP45-12AZ-TUB |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, D3PAK-3/2 光电二极管 |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSP45-12AZ
=
VRRM
2x1200V
45A
Standard Rectifier
=
IFAV
VF
=
1.23V
Phase leg
Part number
DSP45-12AZ
Marking on Product: DSP45-12AZ
Backside: anode/cathode
1
4
3
TO-268AA (D3Pak-HV)
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● High commutation robustness
● High surge capability
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
www.littelfuse.com/disclaimer-electronics.
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190607c
© 2019 IXYS all rights reserved
DSP45-12AZ
Ratings
Rectifier
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1300
1200
40
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR =1200 V
µA
VR =1200 V
IF = 45 A
IF = 90 A
IF = 45 A
IF = 90 A
TC = 130°C
180° sine
1.5 mA
forward voltage drop
1.26
V
V
V
V
A
VF
1.52
1.23
1.57
45
TVJ
=
°C
150
average forward current
threshold voltage
TVJ = 175°C
TVJ = 175°C
IFAV
0.86
V
VF0
for power loss calculation only
slope resistance
7.8 mΩ
0.55 K/W
K/W
rF
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.15
TC = 25°C
TVJ = 45°C
VR = 0 V
270
480
520
410
440
W
A
A
A
A
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
IFSM
TVJ = 150°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
1.15 kA²s
1.13 kA²s
840 A²s
805 A²s
pF
TVJ = 150°C
VR = 0 V
TVJ = 25°C
19
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190607c
© 2019 IXYS all rights reserved
DSP45-12AZ
Ratings
Package TO-268AA (D3Pak-HV)
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
70
175
150
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
4
Weight
20
9.4
5.6
120
N
mm
mm
FC
mounting force with clip
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
Product Marking
Logo
Part No.
IXYS
Assembly Line
Assembly Code
Zyyww
abcd
Date Code
Ordering
Ordering Number
DSP45-12AZ-TUB
DSP45-12AZ-TRL
Marking on Product
DSP45-12AZ
Delivery Mode
Tube
Quantity Code No.
Standard
30
514134
524061
Alternative
DSP45-12AZ
Tape & Reel
400
Similar Part
DSP45-16AZ
DSP45-12A
Package
TO-268AA (D3Pak) (2HV)
TO-247AD (3)
Voltage class
1600
1200
DSP45-16A
TO-247AD (3)
1600
DSP45-16AR
DSP45-18A
ISOPLUS247 (3)
TO-247AD (3)
1600
1800
TVJ = 175°C
Equivalent Circuits for Simulation
* on die level
Rectifier
V0
I
R0
threshold voltage
slope resistance *
0.86
6.5
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190607c
© 2019 IXYS all rights reserved
DSP45-12AZ
Outlines TO-268AA (D3Pak-HV)
Millimeter
Inches
min max
Dim.
A
min
max
5.10
2.90
0.25
1.45
0.65
1.60
4.90
0.193 0.201
0.106 0.114
0.001 0.010
0.045 0.057
0.016 0.026
0.057 0.063
A1 2.70
A2 0.02
b
1.15
0.40
C
C2 1.45
D 13.80 14.00 0.543 0.551
D1 11.80 12.10 0.465 0.476
D2 7.50
D3 2.90
7.80
3.20
0.295 0.307
0.114 0.126
E 15.85 16.05 0.624 0.632
E1 13.30 13.60 0.524 0.535
e
H
L
5.450 BSC
0.215 BSC
18.70 19.10 0.736 0.752
1.70
2.00
1.15
0.067 0.079
0.039 0.045
0.010 BSC
L2 1.00
L3
0.250 BSC
L4 3.80
4.10
0.150 0.161
1
4
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190607c
© 2019 IXYS all rights reserved
DSP45-12AZ
Rectifier
100
400
360
320
1200
1000
800
VR = 0 V
50 Hz, 80% VRRM
80
TVJ = 45°C
TVJ = 45°C
I2t
60
IF
IFSM
600
[A2s]
[A]
40
20
0
280
240
200
TVJ = 150°C
400
200
0
[A]
TVJ = 150°C
TVJ = 150°C
125°C
25°C
0.5
1.0
1.5
0.001
0.01
0.1
1
1
2
3
4 5 6 7 8 10
VF [V]
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I2t versus time per diode
Fig. 1 Forward current versus
voltage drop per diode
80
60
40
20
0
80
60
RthJA
:
DC =
1
0.6 KW
0.8 KW
1
2
4
8
0.5
KW
KW
KW
KW
0.4
Ptot
[W]
0.33
0.17
0.08
IdAVM
40
20
0
DC =
1
[A]
0.5
0.4
0.33
0.17
0.08
0
10
20
30
40
50
0
50
100
150
200
0
50
100
150
200
IdAVM [A]
Tamb [°C]
TC [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
Fig. 5 Max. forward current vs.
case temperature
0.6
0.5
0.4
Zth
0.3
[K/W]
0.2
Ri
ti
i
0.033 0.0006
0.095 0.0039
0.164 0.033
0.258 0.272
1
2
3
4
0.1
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190607c
© 2019 IXYS all rights reserved
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