IXFH36N55Q [LITTELFUSE]
Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IXFH36N55Q |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 36N55Q
IXFT 36N55Q
VDSS
ID25
= 550 V
= 36 A
RDS(on) = 0.16 Ω
trr ≤ 250 ns
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, High dv/dt
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
550
550
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
36
148
36
A
A
A
TO-268 (D3) ( IXFT)
EAR
EAS
TC = 25°C
50
mJ
mJ
2.0
G
(TAB)
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
G = Gate
D
= Drain
PD
TC = 25°C
500
W
S = Source TAB = Drain
TJ
TJM
Tstg
-55 to +150
150
-55 to +150
°C
°C
°C
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Features
Md
1.13/10 Nm/lb.in.
z IXYS advanced low Qg process
z Low gate charge and capacitances
- easier to drive
Weight
TO-247
TO-268
6
4
g
g
- faster switching
z International standard packages
z Low RDS (on)
Symbol
TestConditions
Characteristic Values
z Rated for unclamped Inductive load
switching (UIS) rated
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
z Molding epoxies meet UL 94 V-0
flammability classification
VDSS
VGS(th)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
550
2.5
V
V
4.5
IGSS
IDSS
VGS = ±30 VDC, VDS = 0
±100
nA
Advantages
VDS = V
T
= 25°C
25
1
µA
VGS = 0DVSS
TJJ = 125°C
mA
z
Easy to mount
Space savings
z
RDS(on)
V
= 10 V, ID = 0.5 ID25
0.16
Ω
PGuSlse test, t ≤ 300 µs, duty cycle d ≤ 2 %
z
High power density
© 2003 IXYS All rights reserved
DS99003A(05/03)
IXFH 36N55Q
IXFT 36N55Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 20 V; ID = 0.5 • ID25, pulse test
22
33
S
1
2
3
Ciss
Coss
Crss
4500
600
160
pF
pF
pF
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
17
18
54
15
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2.0 Ω (External),
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
Qg(on)
Qgs
Qgd
128
26
56
nC
nC
nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.25 K/W
K/W
(TO-247)
0.25
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
Symbol
IS
TestConditions
VGS = 0 V
36
148
1.5
A
A
V
TO-268 Outline
ISM
Repetitive; pulse width limited by TJM
VSD
IF = I , VGS = 0 V,
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
250 ns
QRM
IRM
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
1.0
10
µC
A
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 36N55Q
IXFT 36N55Q
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
81
72
63
54
45
36
27
18
36
31.5
27
VGS = 10V
VGS = 10V
7V
6V
7V
22.5
18
6V
5V
13 . 5
9
5V
4.5
0
9
0
0
1
2
3
4
5
6
7
0
3
6
9
12
15
18
21 24
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
2.8
36
31.5
27
VGS = 10V
7V
2.5
2.2
1. 9
1. 6
1. 3
VGS = 10V
6V
5V
22.5
18
I D = 36A
13 . 5
9
I D= 18A
1
0.7
0.4
4.5
0
-50 -25
0
25 50 75 100 125 150
0
2
4
6
8
10
12
14
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
40
35
30
25
20
15
10
5
3.1
2.8
2.5
2.2
1. 9
1. 6
1. 3
1
VGS = 10V
º
TJ = 125 C
º
TJ= 25 C
0
0.7
-50 -25
0
25 50 75 100 125 150
0
9
18 27 36 45 54 63 72 81
I D - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
DS99003A(05/03)
IXFH 36N55Q
IXFT 36N55Q
Fig. 8. Transconductance
Fig. 7. Input Admittance
72
63
54
45
36
27
18
9
70
60
50
40
30
20
10
º
TJ = -40 C
º
25 C
125
º
C
º
TJ= 120 C
º
25 C
º
-40 C
0
0
0
9
18 27 36 45 54 63 72 81
3.5
4
4.5
5
5.5
6
6.5
I D - Amperes
VGS - Volts
Fig. 9. Source Current vs. Source-To-Drain
Voltage
Fig. 10. Gate Charge
10
8
6
4
2
0
10 8
90
72
54
36
18
VD S = 275V
I D = 18A
I G = 10mA
º
TJ = 125 C
º
TJ = 25 C
0
0
20
40
60
80
100
120 140
0.3
0.5
0.7
0.9
1.1
Q G - nanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
1000
10 0
1
f = 1M Hz
C
iss
0.1
C
oss
C
rss
15
0.01
0
5
10
20 25 30 35 40
1
10
100
1000
VDS - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
相关型号：
IXFH40N30S
Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IXYS
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