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IXFH90N20X3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFH90N20X3
型号： IXFH90N20X3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 200V  
ID25 = 90A  
RDS(on) 12.8m  
IXFP90N20X3  
IXFQ90N20X3  
IXFH90N20X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220AB (IXFP)  
G
D
D (Tab)  
S
TO-3P (IXFQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
200  
200  
V
V
G
D
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D (Tab)  
TO-247 (IXFH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
90  
A
A
220  
IA  
TC = 25C  
TC = 25C  
45  
A
J
EAS  
1.5  
G
D
S
D (Tab)  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
390  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in  
Weight  
TO-220  
TO-3P  
TO-247  
3.0  
5.5  
6.0  
g
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
V
2.5  
4.5  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
100 nA  
A  
IDSS  
5
TJ = 125C  
300 A  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
10.5  
12.8 m  
DS100802D(4/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP90N20X3 IXFQ90N20X3  
IXFH90N20X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
40  
67  
S
RGi  
1.4  
Ciss  
Coss  
Crss  
5420  
930  
4
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
420  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
1300  
td(on)  
tr  
td(off)  
tf  
22  
26  
62  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
78  
23  
22  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.32 C/W  
TO-220  
TO-247 & TO-3P  
0.50  
0.25  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
90  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
360  
1.4  
V
trr  
QRM  
IRM  
95  
360  
7.6  
ns  
IF = 45A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFP90N20X3 IXFQ90N20X3  
IXFH90N20X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
V
= 10V  
8V  
GS  
GS  
9V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 45A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
I
= 90A  
D
I
= 45A  
6V  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 45A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
o
T = 25 C  
J
V
GS(th)  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
50  
100  
150  
200  
250  
300  
350  
400  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP90N20X3 IXFQ90N20X3  
IXFH90N20X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
100  
80  
60  
40  
20  
0
240  
200  
160  
120  
80  
o
T
J
= 125 C  
o
25 C  
o
- 40 C  
40  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
240  
80  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
o
T = - 40 C  
J
o
25 C  
o
125 C  
60  
o
T = 125 C  
J
40  
o
T = 25 C  
J
20  
0
0
0
40  
80  
120  
160  
200  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
8
100000  
10000  
1000  
100  
V
= 100V  
DS  
I
I
= 45A  
D
G
= 10mA  
C
iss  
6
C
C
oss  
rss  
4
2
10  
= 1 MHz  
f
0
1
0
10  
20  
30  
40  
50  
60  
70  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFP90N20X3 IXFQ90N20X3  
IXFH90N20X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
8
7
6
5
4
3
2
1
0
R
Limit  
)
DS(  
on  
25μs  
100μs  
1
o
T = 150 C  
J
1ms  
o
T
C
= 25 C  
Single Pulse  
10ms  
DC  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_90N20X3(25-S202) 5-31-17-A  
IXFP90N20X3 IXFQ90N20X3  
IXFH90N20X3  
TO-247 Outline  
TO-220 Outline  
TO-3P Outline  
D
A
A
B
E
A2  
Q
S
D2  
P1  
R
D1  
D
4
1
2
3
L1  
E1  
L
A1  
b
C
b2  
1 - Gate  
2,4 - Drain  
3 - Source  
b4  
e
Pins: 1 - Gate  
3 - Source  
2 - Drain  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  

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