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IXFX520N075T2 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFX520N075T2
型号： IXFX520N075T2
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,

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TrenchT2TM  
IXFK520N075T2  
IXFX520N075T2  
VDSS = 75V  
ID25 = 520A  
RDS(on) 2.2m  
GigaMOSTM HiperFETTM  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
Tab  
VDSS  
VDGR  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
75  
75  
V
V
PLUS247 (IXFX)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IL(RMS)  
IDM  
TC = 25C (Chip Capability)  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
520  
160  
1350  
A
A
A
G
D
Tab  
S
IA  
EAS  
TC = 25C  
TC = 25C  
200  
3
A
J
G = Gate  
D
= Drain  
PD  
TC = 25C  
1250  
W
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Current Handling Capability  
Fast Intrinsic Diode  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Avalanche Rated  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Low RDS(on)  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
2.5  
5.0  
Applications  
DC-DC Converters and Off-Line UPS  
Primary-Side Switch  
High Speed Power Switching  
Applications  
200 nA  
25 A  
IDSS  
TJ = 150C  
2
mA  
RDS(on)  
VGS = 10V, ID = 100A, Notes 1 & 2  
2.2 m  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100211B(4/18)  
IXFK520N075T2  
IXFX520N075T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
65  
105  
S
Ciss  
Coss  
Crss  
41  
4150  
530  
nF  
pF  
pF  
RGI  
td(on)  
tr  
Gate Input Resistance  
1.36  
48  
  
ns  
ns  
ns  
ns  
Resistive Switching Times  
36  
PINS:  
- Gate  
2,4 - Drain  
1
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
td(off)  
tf  
80  
3
- Source  
RG = 1(External)  
35  
Qg(on)  
Qgs  
545  
177  
135  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
RthJC  
RthCS  
0.12C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
PLUS247TM Outline  
IS  
VGS = 0V  
520  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
IF = 150A, VGS = 0V  
1600  
1.25  
trr  
IRM  
150 ns  
A
7
-di/dt = 100A/s  
VR = 37.5V  
QRM  
357  
nC  
PINS:  
1
- Gate  
2,4 - Drain  
3
- Source  
Notes 1. Pulse test, t 300s, duty cycle, d 2%.  
2. Includes lead resistance.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK520N075T2  
IXFX520N075T2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
GS  
V
= 15V  
GS  
10V  
9V  
10V  
9V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
5V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 150A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
350  
300  
250  
200  
150  
100  
50  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
7V  
I
D
= 300A  
I
D
= 150A  
6V  
5V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 150A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit  
T = 175oC  
J
V
= 10V  
15V  
GS  
60  
T = 25oC  
40  
J
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
350  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFK520N075T2  
IXFX520N075T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
T
J
= - 40oC  
T = 150oC  
J
25oC  
25oC  
- 40oC  
150oC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 37.5V  
DS  
I
I
= 260A  
D
G
= 10mA  
T = 150oC  
J
T = 25oC  
J
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
100  
200  
300  
400  
500  
600  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10  
100  
10  
1
R
Limit  
DS(on)  
C
iss  
25μs  
100μs  
External Lead Limit  
C
C
oss  
rss  
1ms  
T = 175oC  
10ms  
J
100ms  
T
= 25oC  
C
DC  
= 1 MHz  
5
f
Single Pulse  
0.1  
1
10  
15  
20  
25  
30  
35  
0
1
10  
100  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK520N075T2  
IXFX520N075T2  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
R
= 1Ω , V = 10V  
R = 1Ω , V = 10V  
G GS  
G
GS  
V
= 37.5V  
V
= 37.5V  
DS  
DS  
T = 125oC  
J
I
= 200A  
D
60  
60  
I
= 100A  
D
40  
40  
T = 25oC  
J
20  
20  
0
0
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
44  
42  
40  
38  
36  
34  
32  
30  
140  
600  
500  
400  
300  
200  
100  
0
240  
t f  
td(off)  
t r  
td(off)  
130  
120  
110  
100  
90  
T = 125oC, V = 10V  
200  
160  
120  
80  
R = 1Ω, V = 10V  
G GS  
J
GS  
I
= 200A  
D
V
= 37.5V  
DS  
V
= 37.5V  
DS  
I
= 100A  
D
I
= 100A  
D
I
= 200A  
D
40  
80  
70  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
46  
44  
42  
40  
38  
36  
34  
32  
180  
160  
140  
120  
100  
80  
t f  
td(off)  
t f  
td(off)  
T = 125oC, V = 10V  
J
GS  
R
G
= 1Ω, VGS = 10V  
V
= 37.5V  
V
DS = 37.5V  
DS  
I
= 200A, 100A  
D
T = 125oC  
J
T = 25oC  
J
60  
40  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFK520N075T2  
IXFX520N075T2  
Fig. 19. Maximum Transient Thermal Impedance  
.sadgsfgsf  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_520N075T2(V9)11-09-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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