IXGQ28N120BD1 [LITTELFUSE]

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN;


型号：	IXGQ28N120BD1
厂家：	LITTELFUSE
描述：	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN 局域网栅功率控制晶体管
文件：	总6页 (文件大小：506K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

High Voltage IGBT with Diode

V_CES

I_C25

= 1200 V

= 50 A

IXGQ 28N120B

IXGQ 28N120BD1

V_CE(sat)= 3.5 V

t_fi(typ)

= 160 ns

TO-3P(IXGQ)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

(TAB)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

G = Gate

E = Emitter

C = Collector

T_C= 25°C, 1 ms

150

TAB = Collector

SSOA

(RBSOA)

V_GE= 15 V, T_J= 125°C, R_G= 10 Ω

Clamped inductive load

I_CM= 60

@0.8 V_CES

P_C

T_C= 25°C

250

Features

^zInternational standard package

^zIGBT and anti-parallel FRED for

resonant power supplies

- Induction heating

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

- Rice cookers

M_d

Mounting torque

1.13/10 Nm/lb.in.

^zMOS Gate turn-on

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

- drive simplicity

^zFast Recovery Expitaxial Diode (FRED)

- soft recovery with low I_RM

Weight

Advantages

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

^zSaves space (two devices in one

package)

Easy to mount with 1 screw

(isolated mounting screw hole)

Reduces assembly time and cost

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

28N120B

28N120BD1

25 µA

50 µA

I_GES

V_CE= 0 V, V_GE= 20 V

100 nA

V_CE(sat)

I_C

= 28A, V_GE= 15 V

2.9

2.8

3.5

Note 2

T=125°C

DS99135(12/03)

IXGQ 28N120B

IXGQ 28N120BD1

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-3P (IXTQ) Outline

g_fs

I_C= 28A; V_CE= 10 V,

Note 2

C_ies

2700

170

28N120B

C_oes

C_res

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

28N120BD1 180

Q_g

Q_ge

Q_gc

I_C= 28A, V_GE= 15 V, V_CE= 0.5 V_CES

t_d(on)

t_ri

Inductive load, T_J= 25°C

I_C= 28 A; V_GE= 15 V

t_d(off)

180

280 ns

V_CE= 0.8 V_CES; R_G= R_off= 5 Ω

t_{f i}

E_off

160

2.0

320 ns

5.0 mJ

Note 1.

t_d(on)

t_ri

Inductive load, T_J= 125°C

I_C= 28A; V_GE= 15 V

E_on

t_d(off)

2.5

250

V_CE= 0.8 V_CES; R_G= R_off= 5 Ω

Note 1

t_{f i}

E_off

300

8.0

R_thJC

R_thCK

0.5 K/W

K/W

0.25

ReverseDiode(FRED)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Symbol

I_F

TestConditions

T_C= 90°C

V_F

I_F= 10 A, V_GE= 0 V

I_F= 10 A, V_GE= 0 V, T_J= 125°C

2.95

2.0

I_RM

t_rr

I_F= 10 A; -di_F/dt = 400 A/µs, V_R= 600 V

V_GE= 0 V; T_J= 125°C

120

t_rr

I_F= 1 A; -di_F/dt = 100 A/µs; V_R= 30 V, V_GE= 0 V

R_thJC

2.5 K/W

Notes: 1.

Switching times may increase for V_CE(Clamp) > 0.8 • V_CES

higher T_Jor increased R_G.

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,850,072

4,835,592

4,931,844

4,881,106

5,034,796

5,017,508

5,063,307

5,049,961

5,237,481

5,187,117

5,381,025

5,486,715

6,404,065B1 6,162,665

6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

6,534,343

6,583,505

IXGQ28N120B

IXGQ 28N120BD1

Fig. 1. Output Characteristics

@ 25 Deg. C

Fig. 2. Extended Output Characteristics

@ 25 deg. C

270

240

210

180

150

120

V_GE= 15V

13V

11V

V_GE= 17V

15V

13V

11V

0.5

1.5

2.5

3.5

V_{C E}- Volts

10 12 14 16 18 20

V_{C E}- Volts

Fig. 3. Output Characteristics

@ 125 Deg. C

Fig. 4. Dependence of V_CE(sat)on

Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_GE= 15V

13V

11V

V_GE= 15V

I_C= 56A

I_C= 28A

I_C= 14A

1.5

2 2.5

V_CE- Volts

3.5

100

125

150

T_J- Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

Fig. 6. Input Admittance

100

T_J= 25ºC

I_C= 56A

28A

14A

T_J= 125ºC

25ºC

-40ºC

10 11 12 13 14 15 16 17

V_{G E}- Volts

IXGQ28N120B

IXGQ 28N120BD1

Fig. 8. Dependence of Turn-off

Energy Loss on R_G

Fig. 7. Transconductance

I_C= 56A

30 T_J= -40ºC

25ºC

125ºC

T_J= 125ºC

V_GE= 15V

V_CE= 960V

I_C= 28A

I_C= 14A

10 20 30 40 50 60 70 80 90 100

R _G- Ohms

I _C- Amperes

Fig. 9. Dependence of Turn-Off

Energy Loss on I_C

Fig. 10. Dependence of Turn-off

Energy Loss on Temperature

R_G= 5Ω

R_G= 47Ω - - - -

V_GE= 15V

R_G= 5Ω

R_G= 47Ω - - - -

V_GE= 15V

V_CE= 960V

I_C= 56A

I_C= 28A

T_J= 125ºC

T_J= 25ºC

I_C= 14A

10 15 20 25 30 35 40 45 50 55 60

I _C- Amperes

25 35 45 55 65 75 85 95 105 115 125

T_J- Degrees Centigrade

Fig. 11. Dependence of Turn-off

Switching Time on R_G

Fig. 12. Dependence of Turn-off

Switching Time on I_C

1400

1200

1000

800

700

600

500

400

300

200

100

t_d(off)

t_fi

R_G= 5Ω

t_d(off)

- - - - - -

t_fi

- - - - - -

T_J= 125ºC

_GE= 15V

V_CE= 960V

V_GE= 15V

V_CE= 960V

T_J= 125ºC

I_C= 56A

600

I_C= 28A

I_C= 14A

T_J= 25ºC

400

200

10 20 30 40 50 60 70 80 90 100

R _G- Ohms

10 15 20 25 30 35 40 45 50 55 60

I _C- Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,850,072

4,835,592

4,931,844

4,881,106

5,034,796

5,017,508

5,063,307

5,049,961

5,237,481

5,187,117

5,381,025

5,486,715

6,404,065B1 6,162,665

6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

6,534,343

6,583,505

IXGQ 28N120B

IXGQ28N120BD1

Fig. 13. Dependence of Turn-off

Switching Time on Temperature

Fig. 14. Gate Charge

550

500

450

400

350

300

250

200

150

100

t_d(off)

V_CE= 600V

I_C= 28A

I_G= 10mA

t_fi

- - - - - -

R_G= 5Ω

_GE= 15V

V_CE= 960V

I_C= 14A

I_C= 56A

I_C= 28A

I_C= 14A

25 35 45 55 65 75 85 95 105 115 125

T_J- Degrees Centigrade

10 20 30 40 50 60 70 80 90 100

Q _G- nanoCoulombs

Fig. 15. Capacitance

10000

1000

100

f = 1 MHz

ies

oes

res

V_{C E}- Volts

Fig. 16. Maximum Transient Thermal Resistance

1.00

0.50

0.10

100

1000

Pulse Width - milliseconds

IXGQ 28N120B

IXGQ28N120BD1

2000

T_VJ= 100°C

V_R= 600V

T_VJ= 100°C

V_R= 600V

1500

Q_r

I_F

I_RM

I_F= 20A

I_F= 10A

I_F= 5A

T_VJ=150°C

T_VJ=100°C

I_F= 20A

I_F= 10A

I_F= 5A

1000

500

T_VJ= 25°C

A/µs

-di_F/dt

V_F

4 V

100

1000

200 400 600 800 1000

A/µs

-di_F/dt

Fig. 17 Forward current I_Fversus V_F

2.0

Fig. 18 Reverse recovery charge Q_r

versus -di_F/dt

Fig. 19 Peak reverse current I_RM

versus -di_F/dt

150

120

1.2

µs

T_VJ= 100°C

V_R= 600V

T_VJ= 100°C

I_F= 10A

140

V_FR

t_fr

t_rr

t_fr

1.5

K_f

V_FR

130

0.8

I_F= 20A

I_F= 10A

1.0

120

I_RM

I_F= 5A

110

0.4

0.5

Q_r

100

0.0

A/µs

120

160

200 400 600 800 1000

°C

A/µs

di_F/dt

T_VJ

-di_F/dt

Fig. 20 Dynamic parameters Q_r, I_RM

versus T_VJ

Fig. 21 Recovery time t_rrversus -di_F/dt

Fig. 22 Peak forward voltage V_FRand

t_fr

versus di_F/dt

Constants for Z_thJCcalculation:

K/W

R_thi(K/W)

t_i(s)

1.449

0.558

0.493

0.0052

0.0003

0.017

Z_thJC

0.1

0.01

DSEP 8-12A

0.001

0.00001

0.0001

0.001

0.01

0.1

Fig. 23 Transient thermal resistance junction to case

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,850,072

4,835,592

4,931,844

4,881,106

5,034,796

5,017,508

5,063,307

5,049,961

5,237,481

5,187,117

5,381,025

5,486,715

6,404,065B1 6,162,665

6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

6,534,343

6,583,505

IXGQ28N120BD1 [LITTELFUSE]

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