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IXGR50N90B2D1 [LITTELFUSE]

Insulated Gate Bipolar Transistor,;

IXGR50N90B2D1


元器件型号：	IXGR50N90B2D1
生产厂家：	LITTELFUSE
描述和应用：	Insulated Gate Bipolar Transistor, 栅
PDF文件：	总7页 (文件大小：256K)
下载文档：	下载PDF数据表文档文件
型号参数：IXGR50N90B2D1参数

IXGR55N120A3H1

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

IXGR55N120A3H1

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN

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0 IXYS

IXGR60N60B2

IGBT 600V 75A 250W ISOPLUS247

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0 IXYS

IXGR60N60B2D1

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS 247, 3 PIN

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1 IXYS

IXGR60N60C2

Lightspeed 2TM Series (Electrically Isolated Back Surface)

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56 IXYS

IXGR60N60C2C1

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, TO-247AD, 3 PIN

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1 IXYS

IXGR60N60C2D1

Lightspeed 2TM Series (Electrically Isolated Back Surface)

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51 IXYS

IXGR60N60C3C1

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

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18 IXYS

IXGR60N60C3D1

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXGR60N60C3D1

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

IXGR60N60U1

LowV-CE(sat) IGBT with Diode ISOPLUS247-TM (Electrically Isolated Back Surface)

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144 IXYS

IXGR64N60A3

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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12 IXYS

IXGR6N170A

Insulated Gate Bipolar Transistor, 5.5A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN

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0 IXYS

IXGR72N60A3

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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23 IXYS

IXGR72N60A3H1

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

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