IXKP13N60C5M [LITTELFUSE]
Power Field-Effect Transistor, 6.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN;
| 型号： | IXKP13N60C5M |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 6.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXKP 13N60C5M
CoolMOS™ 1) Power MOSFET
ID25
VDSS
= 6.5 A
= 600 V
RDS(on) max = 0.3 Ω
Fully isolated package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-220 FP
G
D
S
G
Preliminary data
S
Features
MOSFET
• fast CoolMOS™ 1) power MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
4th generation
TVJ = 25°C
600
20
V
- High blocking capability
- Lowest resistance
VGS
V
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
ID25
ID90
TC = 25°C
TC = 90°C
6.5
4.5
A
A
EAS
EAR
single pulse
repetitive
290
0.44
mJ
mJ
ID = 4.4 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Applications
• Switched mode power supplies
(SMPS)
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
min. typ. max.
RDSon
VGS = 10 V; ID = 6.6 A
270
3
300
mΩ
• Inductive heating
• PDP and LCD adapter
VGS(th)
IDSS
VDS = VGS; ID = 0.44 mA
VDS = 600 V; VGS = 0 V
2.5
3.5
1
V
TVJ = 25°C
TVJ = 125°C
µA
µA
10
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
IGSS
VGS
=
20 V; VDS = 0 V
100
30
nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
1100
60
pF
pF
Qg
Qgs
Qgd
22
5
7.6
nC
nC
nC
VGS = 0 to 10 V; VDS = 400 V; ID = 6.6 A
td(on)
tr
td(off)
tf
10
5
40
5
ns
ns
ns
ns
VGS = 10 V; VDS = 400 V
ID = 6.6 A; RG = 4.3 Ω
RthJC
3.85 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
1 - 4
IXKP 13N60C5M
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
6.6
1.2
A
VSD
IF = 6.6 A; VGS = 0 V
0.9
V
trr
QRM
IRM
300
3.9
26
ns
µC
A
IF = 6.6 A; -diF/dt = 100 A/µs; VR = 400 V
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
-55...+150
-55...+150
°C
°C
Md
mounting torque
0.4 ... 0.6
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
RthCH
RthJA
with heatsink compound
thermal resistane juntion - ambient
0.50
80
K/W
K/W
Weight
2
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
2 - 4
IXKP 13N60C5M
TO-220 ABFP Outline
Ø P
A
E
A1
H
Q
D
L1
A2
L
c
b1
b
e
35
30
25
20
15
10
5
45
30
15
0
25
20
15
10
5
10V
TJ = 25°C
TJ = 150°C
1 2V
20 V
=
VGS
20 V
1 2V
10 V
6 V
8 V
VGS
=
8 V
5.5 V
6 V
5 V
5.5 V
4.5 V
5 V
4.5 V
0
0
0
40
80
120
160
0
5
10
15
20
0
5
10
[V]
15
20
TC [°C]
V
[V]
DS
V
DS
Fig. 1 Power dissipation
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209d
3 - 4
IXKP 13N60C5M
1
50
40
30
20
10
0
1.8
1.6
1.4
1.2
ID = 6.6 A
VGS = 10 V
VDS > 2·RDS(on) max · ID
5 V
=
5.5 V
6 V
VDS
7 V
6.5 V
25 °C
0.8
TJV = 150°C
10 V
0.6
0.4
0.2
1
0.8
0.6
0.4
0.2
50 °C
TJ =
typ
98 %
0
0
0
5
10
15
20
25
-60
-20
20
60
j [°C]
100
140
180
0
2
4
6
8
10
T
I D [A]
V
[V]
GS
Fig. 4 Typ. drain-source on-state
Fig. 5 Drain-source on-state resistance
Fig. 6 Typ. transfer characteristics
resistance characteristics of IGBT
10 5
10 4
10 3
10 2
10 1
10 0
10 2
10 1
10 0
10 -1
10
9
8
7
6
5
4
3
2
1
0
ID = 6.6 A pulsed
VGS = 0 V
f = 1 MHz
25 °C, 98%
VDS = 120 V
150 °C, 98%
25 °C
Ciss
TJ = 150 °C
Coss
Crss
0
100
200
300
[V]
400
500
0
0.5
1
1.5
2
0
5
10
Q
15
gate [nC]
20
25
V
V
[V]
DS
SD
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 9 Typ. capacitances
300
200
100
0
700
660
620
580
540
ID = 4.4 A
ID = 0.25 mA
-20
20
20
60
100
140
180
-60
60
100
140
180
T
j [°C]
T
j [°C]
Fig. 10 Avalanche energy
Fig. 11 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
20090209d
© 2009 IXYS All rights reserved
4 - 4
相关型号：
IXKP20N60C5M
Power Field-Effect Transistor, 7.6A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
LITTELFUSE
IXKP24N60C5
Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IXYS
IXKP24N60C5M
Power Field-Effect Transistor, 8.5A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN
LITTELFUSE
IXKP24N60C5M
Power Field-Effect Transistor, 8.5A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN
IXYS
IXKP30N60C5
Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
LITTELFUSE
IXKP35N60C5
Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IXYS
IXKP35N60C5
Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明