IXTD16P20-5B
更新时间：2024-09-18 17:59:50
品牌：LITTELFUSE
描述：Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE
概述
规格参数
数据手册IXTD16P20-5B 概述
Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE 功率场效应晶体管
IXTD16P20-5B 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | , | Reach Compliance Code： | compliant |
| 风险等级： | 5.39 | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 200 V | 最大漏源导通电阻： | 0.22 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | 元件数量： | 1 |
| 工作模式： | ENHANCEMENT MODE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | P-CHANNEL | 认证状态： | Not Qualified |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
IXTD16P20-5B 数据手册
通过下载IXTD16P20-5B数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载N-Channel Depletion Mode MOSFET
Depletion Mode MOSFETs
Chip size
Type
VDSS
max.
RDSon
max.
Chip
type
Source -
bond wire
Equivalent
device
Depletion mode MOSFETs, unlike the regular enhancement
type MOSFETs, requires a negative gate bias to turn it off.
Consequently they remain on at or above zero gate bias
voltage but otherwise have similar MOSFET characteristics.
Their Rds(on) and breakdown voltage have a positive
temperature coefficient, increasing the gate bias voltage
increases the gate channel conductivity and so decreases
Rds(on) to some extent and there is a usable intrinsic
diode. IXYS Corporation’s IXTP01N100D is a depletion
mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA
and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other
dimensions
recommended
data sheet
V
Ω
mm
mils
IXTD 02N50D-1M
IXTD 01N100D-1M
500
30
1M
1M
1.96 x 1.68
1.96 x 1.68
77 x 66
3 mil x 1
3 mil x 1
IXTP 02N50D
IXTP 01N100D
1000
110
77 x 66
depletion mode MOSFET, IXTP02N05D, is rated at VDSS
=
500 Volts, ID = 200 mA, while its RDS(on) = 30 Ohms. The
minimum required gate bias to turn them off is –5 Volts.
They are both housed in TO-220 package and can dissipate
25 Watts at TC = 250C.
There are many applications in which IXTP01N100D and
IXTP02N05D can be used: current regulators, off-line
linear regulators, input transient voltage suppressors, input
current inrush limiters, solid state relays etc.
P-Channel Power MOSFET
Type
VDSS
RDS(ON)
max.
Chip
type
Chip size
dimensions
Source -
bond wire
Equivalent
device
max.
recommended
data sheet
V
Ω
mm
mils
100
0.08
0.06
IXTD36P10-5B
5B
7B
6.58 x 6.58
8.84 x 7.18
259 x 259
348 x 283
12 mil x 3
15 mil x 3
IXTH36P10
IXTH50P10
IXTD50P10-7B
200
500
0.22
0.16
IXTD16P20-5B
IXTD24P20-7B
5B
7B
6.58 x 6.58
8.84 x 7.18
259 x 259
348 x 283
12 mil x 3
15 mil x 3
IXTH16P20
IXTH24P20
1.20
0.75
1.05
IXTD8P50-5B
IXTD11P50-7B
IXTD10P60-7B
5B
7B
7B
6.58 x 6.58
8.84 x 7.18
8.84 x 7.18
259 x 259
348 x 283
348 x 283
12 mil x 3
15 mil x 3
15 mil x 3
IXTH7P50
IXTH11P50
IXTH10P60
© 2004 IXYS All rights reserved
12
IXTD16P20-5B 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IXTD170N10P-8S | IXYS | Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.438 X 0.281 INCH, DIE | 获取价格 |
|
| IXTD180N15P-88 | IXYS | Power Field-Effect Transistor, 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE | 获取价格 |
|
| IXTD200N10P-88 | IXYS | Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE | 获取价格 |
|
| IXTD21N50 | MICROSEMI | Power Field-Effect Transistor, 21A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE | 获取价格 |
|
| IXTD24N50-7X | IXYS | Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | 获取价格 |
|
| IXTD24P20-7B | LITTELFUSE | Power Field-Effect Transistor, 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.348 X 0.283 INCH, DIE | 获取价格 |
|
| IXTD36N30P-5S | IXYS | Power Field-Effect Transistor, 300V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.244 X 0.205 INCH, DIE | 获取价格 |
|
| IXTD36P10-5B | LITTELFUSE | Power Field-Effect Transistor, 100V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE | 获取价格 |
|
| IXTD40N30 | MICROSEMI | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE | 获取价格 |
|
| IXTD50N20 | MICROSEMI | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE | 获取价格 |
|
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