IXTH420N04T2 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTH420N04T2 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT2TM Power
MOSFET
VDSS = 40V
ID25 = 420A
RDS(on) ≤ 2.0mΩ
IXTH420N04T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
40
40
V
V
G
VDGR
(TAB)
D
S
VGSM
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
420
160
A
A
A
G = Gate
S = Source
D
= Drain
TAB = Drain
TC = 25°C, Pulse Width Limited by TJM
1050
IA
TC = 25°C
TC = 25°C
TC = 25°C
200
960
935
A
mJ
W
EAS
PD
Features
z International Standard Package
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
-55 ... +175
z Fast Intrinsic Diode
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
z
Low RDS(on)
Md
Mounting Torque
1.13 / 10
Nm/lb.in.
Weight
6
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
40
V
V
Applications
1.5
3.5
z
DC/DC Converters and Off-line UPS
Primary- Side Switch
z
±200 nA
z
High Current Switching Applications
IDSS
10 μA
TJ = 150°C
300 μA
RDS(on)
VGS = 10V, ID = 100A, Note 1
1.6
2.0 mΩ
DS100170(7/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH420N04T2
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
70
120
S
Ciss
Coss
Crss
19.7
3220
690
nF
pF
pF
∅ P
1
2
3
RGi
Gate Input Resistance
1.45
Ω
td(on)
tr
td(off)
tf
23
27
ns
ns
ns
ns
Resistive Switching Times
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A
70
Terminals: 1 - Gate
2 - Drain
Tab - Drain
RG = 2Ω (External)
3 - Source
155
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
315
68
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
73
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCH
0.16 °C/W
°C/W
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-Drain Diode
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
∅P 3.55
Q
3.65
.140 .144
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0V
420
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
1680
1.3
trr
74
2.7
ns
A
IF = 150A, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 20V
100
nC
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH420N04T2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
350
300
250
200
150
100
50
350
300
250
200
150
100
50
VGS = 15V
VGS = 10V
10V
8V
7V
8V
6V
5V
6V
5V
4V
4V
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
350
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 210A Value vs.
Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
350
300
250
200
150
100
50
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 15V
VGS = 10V
10V
8V
7V
I D = 320A
6V
I D = 210A
5V
4V
3V
0
-50
-25
0
25
50
75
100
125
150
175
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 210A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
2.0
1.8
1.6
1.4
1.2
1.0
0.8
External Lead Current Limit
TJ = 175ºC
VGS = 10V
15V
- - - - -
60
TJ = 25ºC
40
20
0
-50
-25
0
25
50
75
100
125
150
175
50
100
150
200
250
300
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH420N04T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
240
200
160
120
80
200
180
160
140
120
100
80
TJ = - 40ºC
25ºC
150ºC
60
TJ = 150ºC
25ºC
- 40ºC
40
40
20
0
0
0
0
1
20
40
60
80
100
120
140
160
180
200
320
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.2
40
ID - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 20V
I
I
D = 210A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
40
80
120
160
200
240
280
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000
100
100,000
10,000
1,000
100
= 1 MHz
T
T
= 175ºC
= 25ºC
f
J
R
Limit
C
DS(on)
Single Pulse
C
iss
25µs
C
100µs
oss
External Lead Current Limit
1ms
C
rss
10ms
DC
100ms
10
0
5
10
15
20
25
30
35
10
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_420N04T2(V8)7-15-09
IXTH420N04T2
Fig. 13. Resistive Turn-on
Fig. 14. Resistive Turn-on
Rise Time vs. Junction Temperature
Rise Time vs. Drain Current
36
34
32
30
28
26
24
22
36
34
32
30
28
26
24
RG = 2ꢀ
GS = 10V
VDS = 20V
RG = 2Ω
V
VGS = 10V
VDS = 20V
TJ = 125ºC
I D = 100A
I D = 200A
TJ = 25ºC
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
360
320
280
240
200
160
120
80
100
90
80
70
60
50
40
30
20
10
240
200
160
120
80
110
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 20V
tf
t
d(off) - - - -
RG = 2Ω, VGS = 10V
DS = 20V
100
90
80
70
60
50
I D = 200A, 100A
V
V
I D = 100A
I D = 200A
40
40
0
0
25
35
45
55
65
75
85
95
105
115
125
2
4
6
8
10
12
14
16
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
240
200
160
120
80
120
110
100
90
600
500
400
300
200
100
0
600
500
400
300
200
100
0
t f
t
d(off) - - - -
TJ = 125ºC, VGS = 10V
DS = 20V
tf
t
d(off) - - - -
RG = 2ꢀ, VGS = 10V
DS = 20V
V
V
I D = 100A, 200A
TJ = 125ºC, 25ºC
80
40
70
0
60
40
60
80
100
120
140
160
180
200
2
4
6
8
10
12
14
16
ID - Amperes
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH420N04T2
1
Fig. 19. Maximum Transient Thermal Impedance
0.20
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_420N04T2(V8)7-15-09
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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