IXTT21N50Q [LITTELFUSE]

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN;
IXTT21N50Q
型号: IXTT21N50Q
厂家: LITTELFUSE    LITTELFUSE
描述:

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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IXTT22N60P

Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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0 IXYS

IXTT240N15X4HV

Power Field-Effect Transistor,

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1 LITTELFUSE

IXTT24N50Q

Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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0 IXYS

IXTT24N50Q

Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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0 LITTELFUSE

IXTT24P20

Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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0 IXYS

IXTT26N50P

Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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0 IXYS

IXTT26N50P

Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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0 LITTELFUSE

IXTT26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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0 IXYS

IXTT26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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0 LITTELFUSE

IXTT28N50Q

Power MOSFETs Q-Class

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44 IRF

IXTT30N50L2

Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode

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12 IXYS

IXTT30N60L2

Linear L2 Power MOSFET with extended FBSOA

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14 IXYS

IXTT30N60P

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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117 IXYS

IXTT360N055T2

Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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0 IXYS

IXTT36N50P

N-Channel Enhancement Mode

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67 IXYS