IXTT60N20L2 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTT60N20L2 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
Linear L2TM Power
MOSFET w/ Extended
FBSOA
VDSS = 200V
ID25 = 60A
RDS(on) ≤ 45mΩ
IXTT60N20L2
IXTQ60N20L2
IXTH60N20L2
TO-268 (IXTT)
N-Channel Enhancement Mode
Avalanche Rated
G
S
Tab
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
200
200
V
V
V
V
TO-3P (IXTQ)
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 20
± 30
G
D
S
ID25
IDM
TC = 25°C
60
A
A
Tab
TC = 25°C, Pulse Width Limited by TJM
150
TO-247(IXTH)
IA
TC = 25°C
TC = 25°C
60
2
A
J
EAS
PD
TC = 25°C
540
W
TJ
-55 to +150
+150
°C
°C
°C
TJM
Tstg
G
D
Tab
-55 to +150
S
TL
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
G = Gate
D
= Drain
TSOLD
S = Source
Tab = Drain
Md
Mounting Torque (TO-247&TO-3P)
1.13/10
Nm/lb.in.
Weight
TO-268
TO-3P
TO-247
4.0
5.5
6.0
g
g
g
Features
z Designed for Linear Operation
z International Standard Packages
z Avalanche Rated
z Guaranteed FBSOA at 75°C
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
200
2.5
Typ.
Max.
Advantages
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
Easy to Mount
Space Savings
High Power Density
4.5
z
z
±100 nA
μA
IDSS
5
Applications
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
50 μA
45 mΩ
z Solid State Circuit Breakers
z Soft Start Controls
RDS(on)
z Linear Amplifiers
z Programmable Loads
z Current Regulators
© 2009 IXYS CORPORATION, All Rights Reserved
DS100203(10/09)
IXTT60N20L2 IXTQ60N20L2
IXTH60N20L2
Symbol
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
35
44
53
S
Ciss
Coss
Crss
10.5
1080
255
nF
pF
pF
td(on)
tr
td(off)
tf
26
23
90
18
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
255
48
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
90
RthJC
RthCS
0.23 °C/W
°C/W
(TO-247&TO-3P)
0.25
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 160V, ID = 1.88A, TC = 75°C, tp = 3s
300
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
TO-247 (IXTH) Outline
IS
VGS = 0V
60
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
240
1.4
∅ P
1
2
3
trr
IRM
QRM
330
25.0
4.13
ns
A
μC
IF = 30A, -di/dt = 100A/μs,
VR = 75V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXTT60N20L2 IXTQ60N20L2
IXTH60N20L2
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
60
50
40
30
20
10
0
180
160
140
120
100
80
VGS = 20V
VGS = 20V
14V
14V
12V
10V
8V
12V
10V
8V
6V
60
6V
4V
40
20
4V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12
15
18
21
24
27
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
60
50
40
30
20
10
0
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 20V
VGS = 10V
12V
10V
8V
6V
I D = 60A
I D = 30A
4V
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
60
50
40
30
20
10
0
5.0
VGS = 10V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXTT60N20L2 IXTQ60N20L2
IXTH60N20L2
Fig. 7. Input Admittance
Fig. 8. Transconductance
140
120
100
80
100
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
60
25ºC
- 40ºC
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
1.3
40
0
20
40
60
80
100
120
140
400
10
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
240
200
160
120
80
VDS = 100V
I D = 30A
I G = 10mA
6
TJ = 125ºC
4
TJ = 25ºC
40
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
50
100
150
200
250
300
350
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
100.0
10.0
1.0
1.000
0.100
0.010
0.001
= 1 MHz
f
C
iss
C
oss
C
rss
0.1
0
5
10
15
20
25
30
35
0.00001
0.0001
0.001
0.01
0.1
1
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT60N20L2 IXTQ60N20L2
IXTH60N20L2
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25ºC
Fig. 14. Forward-Bias Safe Operating Area
@ TC = 75ºC
1,000
100
10
1,000
100
10
TJ = 150ºC
TJ = 150ºC
C = 25ºC
Single Pulse
TC = 75ºC
T
Single Pulse
R
Limit
R
Limit
DS(on)
DS(on)
25µs
25µs
100µs
100µs
1ms
1ms
10ms
10ms
100ms
DC
100ms
DC
100
1
1
1
10
100
1,000
1
10
1,000
VDS - Volts
VDS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_60N20L2(8R)09-29-09
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
相关型号：
IXTT60N25
Power Field-Effect Transistor, 60A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IXYS
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