M1242ND360 [LITTELFUSE]
Rectifier Diode, 1 Phase, 1 Element, 1242A, 3600V V(RRM), Silicon,;
| 型号： | M1242ND360 |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1242A, 3600V V(RRM), Silicon, |
| 文件： | 总11页 (文件大小：654K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 20 Oct 2014
Data Sheet Issue:- 2
Soft Recovery Diode
Type M1242N#260 to M1242N#360
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VRRM
VRSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
2600-3600
V
V
2700-3700
MAXIMUM
LIMITS
1242
OTHER RATINGS
UNITS
IF(AV)M
IF(AV)M
IF(AV)M
IF(RMS)
If(d.c.)
IFSM
Maximum average forward current, Tsink=55°C, (note 2)
Maximum average forward current. Tsink=100°C, (note 2)
Maximum average forward. Tsink=100°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
A
A
600
348
A
2463
A
2109
A
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Operating temperature range
16.4
kA
kA
A2s
A2s
°C
°C
IFSM2
I2t
18.0
1.34 × 106
1.62 × 106
-40 to +125
-40 to +150
I2t
Tj op
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 1 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
2.20 IFM=2200A
2.87 IFM=4400A
1.27
VFM
Maximum peak forward voltage
V
-
VT0
rT
Threshold voltage
Slope resistance
-
-
V
-
-
0.42
m
-
-
150 di/dt = 1000A/µs
VFRM
Maximum forward recovery voltage
Peak reverse current
V
-
-
65
60
60
-
di/dt = 1000A/µs, 25°C
-
-
Rated VRRM
IRRM
mA
-
-
1500
600
200
6
Rated VRRM, Tj=25°C
Qrr
Qra
Irm
trr
Recovered charge
-
µC
µC
A
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% Chord
-
810
-
IFM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, 50% Chord.
-
-
-
µs
-
-
0.022 Double side cooled
RthJK
Thermal resistance, junction to heatsink
K/W
-
-
0.044 Single side cooled
F
Mounting force
Weight
19
-
-
26
-
kN
g
Wt
510
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces please consult factory.
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 2 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
VRRM
(V)
VRSM
(V)
VR dc
(V)
26
36
2600
3600
2700
3600
1500
1900
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
VF A Bln(IF ) C IF D IF
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150s integration time.
150s
Qrr irr.dt
I.e.
0
t1
K Factor
(iii)
t2
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 3 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
TSINK TJ (MAX ) E
k f R
th(JK )
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W W(original) E f
(tot)
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
Vr
di
CS
dt
R2 4
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 4 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
VT 0 VT 0 4 ff 2 r WAV
T
IAV
2 ff 2 r
T
Where VT0 =1.27V, rT = 0.42m
ff = form factor (normally unity for fast diode applications)
T
WAV
R
th
T Tj(MAX ) TK
7.2 Calculation of VF using ABCD Coefficients
The forward characteristic IF Vs VF, on page 6 is represented in two ways;
(i)
(ii)
the well established VT0 and rT tangent used for rating purposes and
a set of constants A, B, C, and D forming the coefficients of the representative equation for VF in
terms of IF given below:
VF A Bln(IF ) C IF D IF
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for VF agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
0.911102
125°C Coefficients
0.542148
A
B
C
D
0.071972
0.125092
1.55×10-4
2.30×10-4
7.459×10-3
4.032×10-3
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 5 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Curves
Figure 1 – Forward characteristics of Limit device
Figure 2 – Maximum forward recovery voltage
10000
1000
M1242N#260-360
M1242N#260-360
Issue 2
Issue 2
25°C
125°C
125°C
25°C
1000
100
100
10
0
1
2
3
4
10
100
1000
10000
Maximum instantaneous forward voltage - VFM (V)
Rate of rise of forward current - di/dt (A/µs)
Figure 3 - Recovered charge, Qrr
Figure 4 - Recovered charge, Qra (50% chord)
10000
10000
M1242N#260-360
Issue 2
M1242N#260-360
Issue 2
Tj = 125°C
Tj = 125°C
4000A
3000A
2000A
1000A
4000A
3000A
2000A
1000A
1000
1000
100
100
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 6 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Figure 5 - Maximum reverse current, Irm
Figure 6 - Maximum recovery time, trr (50% chord)
100
1000
M1242N#260-360
Issue 2
M1242N#260-360
Issue 2
Tj = 125°C
4000A
3000A
2000A
1000A
Tj = 125°C
10
100
4000A
3000A
2000A
1000A
1
10
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Figure 7 – Reverse recovery energy per pulse
Figure 8 - Sine wave energy per pulse
1.00E+02
10
M1242N#260-360
M1242N#260-360
Issue 2
Issue 2
Tj = 125°C
Vrm=67%VRRM
Tj = 125°C
4000A
3000A
2000A
1000A
0.22µF, 10
Snubber
500A
1.00E+01
2500A
1500A
1000A
500A
1
1.00E+00
1.00E-01
1.00E-02
0.1
10
100
1000
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Commmutation rate - di/dt (A/µs)
Pulse width (s)
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 7 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Figure 9 - Sine wave frequency vs. pulse width
Figure 10 - Sine wave frequency vs. pulse width
1.00E+05
1.00E+05
M1242N#260-360
M1242N#260-360
Issue 2
Issue 2
TK = 55°C
TK= 85°C
500A
1000A
100% Duty Cycle
100% Duty Cycle
1.00E+04
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1000A
2000A
2000A
3000A
3000A
4000A
4000A
1.00E+03
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 11 - Square wave frequency vs. pulse width
Figure 12 - Square wave frequency vs. pulse width
1.00E+05
1.00E+05
M1242N#260-360
M1242N#260-360
Issue 2
Issue 2
di/dt =500A/µs
di/dt =100A/µs
TK = 55°C
TK=55°C
500A
500A
100% Duty Cycle
1000A
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+04
1000A
2000A
3000A
4000A
1.00E+03
2000A
3000A
4000A
1.00E+02
1.00E+01
1.00E-05
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 8 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Figure 13 - Square wave frequency vs. pulse width
Figure 14 - Square wave frequency vs. pulse width
1.00E+05
1.00E+05
M1242N#260-360
M1242N#260-360
Issue 2
500A
Issue 2
di/dt =500A/µs
di/dt =100A/µs
TK = 85°C
TK = 85°C
500A
1000A
100% Duty Cycle
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1000A
2000A
1.00E+04
1.00E+03
1.00E+02
1.00E+01
2000A
3000A
3000A
4000A
4000A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave energy per pulse
Figure 16 - Square wave energy per pulse
1.00E+03
1.00E+03
M1242N#260-360
M1242N#260-360
Issue 2
Issue 2
di/dt =100A/µs
Tj = 125°C
di/dt =500A/µs
Tj = 125°C
1.00E+02
1.00E+02
4000A
3000A
2000A
1000A
500A
1.00E+01
1.00E+01
4000A
3000A
1.00E+00
1.00E+00
1.00E-01
1.00E-02
2000A
1000A
1.00E-01
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 9 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Figure 17 – Maximum surge and I2t ratings
100000
1.00E+07
M1242N#260-360
I2t: VRRM10V
I2t: VR=60% VRRM
Issue 2
Tj (initial) = 125°C
10000
1.00E+06
IFSM: VRRM10V
IFSM: VR=60% VRRM
1000
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Figure 18 – Transient thermal impedance
0.1
0.01
M1242N#260-360
Issue 2
SSC 0.044K/W
DSC 0.022K/W
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 10 of 11
October 2014
Soft Recovery Diode Types M1242N#260 to M1242N#360
Outline Drawing & Ordering Information
100A325
100A249
Outline option NC
Outline option ND
ORDERING INFORMATION
(Please quote 10 digit code as below)
M1242
N#
0
Fixed outline code
NC = 27.0mm Clamp Height
ND = 21mm Clamp Height
Voltage code
VDRM/100
26-36
Fixed
Type Code
Fixed code
Order code: M1242NC260 – 2600V VRRM, 27.0mm clamp height capsule.
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The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except
with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Data Sheet. Types M1242N#260 to M1242N#360 Issue 2
Page 11 of 11
October 2014
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