MCA431-22IO2 [LITTELFUSE]
Silicon Controlled Rectifier, 2200V V(DRM), 2200V V(RRM), 2 Element, MODULE-7;
| 型号： | MCA431-22IO2 |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 2200V V(DRM), 2200V V(RRM), 2 Element, MODULE-7 |
| 文件： | 总10页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date: 15.10.2014
IXYS
Data Sheet Issue: 2
Thyristor/Diode Modules M## 431
Absolute Maximum Ratings
VRRM
VDRM
[V]
MCC
MCA
MCK
MCD
MDC
2000
2200
2400
431-20io2
431-22io2
431-24io2
431-20io2
431-22io2
431-24io2
431-20io2
431-22io2
431-24io2
431-20io2
431-22io2
431-24io2
431-20io2
431-22io2
431-24io2
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
Repetitive peak off-state voltage 1)
Non-repetitive peak off-state voltage 1)
Repetitive peak reverse voltage 1)
Non-repetitive peak reverse voltage 1)
2000-2400
2100-2500
2000-2400
2100-2500
V
V
V
V
VDSM
VRRM
VRSM
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)M
IT(AV)M
Maximum average on-state current, TC = 85°C 2)
Maximum average on-state current. TC = 100°C 2)
429
296
A
A
IT(RMS)M Nominal RMS on-state current, TC = 55°C 2)
1020
809
A
IT(d.c.)
ITSM
ITSM2
I2t
D.C. on-state current, TC = 55°C
A
3)
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM
10.9
kA
kA
A2s
A2s
A/µs
A/µs
V
Peak non-repetitive surge tp = 10 ms, VRM 10V 3)
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM
12.0
594×103
720×103
200
3)
I2t
I2t capacity for fusing tp = 10 ms, VRM 10 V 3)
Critical rate of rise of on-state current (repetitive) 4)
Critical rate of rise of on-state current (non-repetitive) 4)
Peak reverse gate voltage
(di/dt)cr
400
VRGM
PG(AV)
PGM
5
Mean forward gate power
4
W
Peak forward gate power
30
W
VISOL
Tvj op
Tstg
Isolation Voltage 5)
3000
-40 to +125
-40 to +125
V
Operating temperature range
°C
°C
Storage temperature range
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tvj initial.
4) VD = 67% VDRM, IFG = 2 A, tr 0.5µs, TC = 125°C.
5) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 1 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VTM
VT0
rT
Maximum peak on-state voltage
Threshold voltage
-
-
-
1.30
1.50 ITM = 1256 A
V
V
-
1.00
0.41
Slope resistance
-
m
V/s
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage 1000
-
-
VD = 80% VDRM, linear ramp, Gate o/c
IDRM
IRRM
VGT
IGT
VGD
IL
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
100 Rated VDRM
100 Rated VRRM
2.5
-
-
-
-
Tvj = 25°C, VD = 12 V, IT = 3 A
Gate trigger current
-
-
250
-
mA
V
Gate non-trigger voltage
Latching current
0.25
-
67% VDRM
-
-
-
-
-
-
-
-
-
-
1000 VD = 12 V, Tvj = 25°C
300 VD = 12 V, Tvj = 25°C
2.5
mA
mA
IH
Holding current
tgd
Gate controlled turn-on delay time
Turn-on time
-
IFG = 2 A, tr =1 µs, VD = 40%VDRM
,
µs
ITM = 1500 A, di/dt = 10 A/µs, Tvj = 25°C
tgt
-
8.0
Qrr
Qra
Irm
Recovered Charge
1600
1350
120
23
1800
µC
µC
A
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
-
-
-
ITM = 800 A, tp =1ms, di/dt =10A/µs,
VR =100 V
trr
µs
ITM = 1500 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 100 V, VDR = 67%VDRM, dvDR/dt = 50 V/µs
tq
Turn-off time
-
-
250
µs
-
-
0.062 Single Thyristor
0.031 Whole Module
0.02 Single Thyristor
0.01 Whole Module
6.9
K/W
K/W
K/W
K/W
Nm
Nm
kg
RthJC
Thermal resistance, junction to case
-
-
-
-
-
RthCH
Thermal resistance, case to heatsink
-
-
F1
F2
Wt
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
5.1
10.8
-
2)
-
13.2
1.5
-
Notes:
1) Unless otherwise indicated Tvj=125°C.
2) Screws must be lubricated.
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 2 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VRRM
VDSM VRSM
V
VD VR
DC V
1500
1650
1800
Voltage Grade
V
20
22
24
2000
2200
2400
2100
2300
2500
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 3 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
T
Rth
2
VT 0 VT 0 4 ff 2 r WAV
WAV
T
IAV
and:
2 ff 2 r
T
T Tj max TK
Where VT0 = 1.0 V, rT = 0.41 m.
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
60°
90°
120°
180°
270°
d.c.
0.0702
0.0677
0.0685
0.0673
0.0679
0.0664
0.0668
0.0655
0.0658
0.0650
0.0637
0.0620
Form Factors
90°
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
120°
1.732
1.879
180°
1.414
1.57
270°
d.c.
1
2.449
2.778
2
1.149
2.22
8.2 Calculating thyristor VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented by a set of constants A, B, C, D, forming
the coefficients of the representative equation for VT in terms of IT given below:
VT A Bln
IT C IT D IT
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
1.001105
0.1016930
4.732084E-4
-0.02366814
A
B
C
D
0.6018822
0.06092552
2.507715E-4
4.119984E-3
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 4 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
8.3 D.C. Thermal Impedance Calculation
t
p
pn
p
r r 1 e
t
p1
Where p = 1 to n and:
n = number of terms in the series
t = Duration of heating pulse in seconds
rt = Thermal resistance at time t
rp = Amplitude of pth term
= Time Constant of rth term
p
The coefficients for this device are shown in the table below:
D.C.
Term
rp
1
2
3
4
5
1.37×10-3
4.86×10-3
0.0114
0.0223
0.0221
7.6×10-4
8.6×10-3
0.101
0.56
3.12
p
9.0 Reverse recovery ratings
(i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 µs integration time i.e.
150s
Qrr irr.dt
0
(iii)
t1
K Factor
t2
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 5 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
Curves
Figure 1 – On-state characteristics of Limit device
10000
M##431-20io2-24io2
Issue 2
Tj = 25°C
Tj = 125°C
1000
100
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state voltage - VTM (V)
Figure 2 – Gate characteristics – Trigger limits
Figure 3 – Gate characteristics – Power curves
25
7
M##431-20io2-24io2
M##431-20io2-24io2
Issue 2
Issue 2
Tj=25°C
Tj=25°C
6
20
Max VG dc
Max VG dc
5
15
4
IGT, VGT
3
10
PG Max 30W dc
2
5
PG 4W dc
1
IGD, VGD
Min VG dc
Min VG dc
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 6 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
Figure 4 - Total recovered charge, Qrr
Figure 5 - Recovered charge, Qra (50% chord)
10000
10000
M##431-20io2-24io2
M##431-20io2-24io2
Issue 2
Issue 2
Tj=125°C
Tj=125°C
1600A
1200A
1600A
1200A
800A
400A
800A
400A
1000
1000
100
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 6 - Peak reverse recovery current, Irm
Figure 7 - Maximum recovery time, trr (50% chord)
10000
100.0
M##431-20io2-24io2
M##431-20io2-24io2
Issue 2
Issue 2
Tj=125°C
Tj=125°C
1600A
1000
100
10
1200A
800A
400A
1600A
1200A
800A
10.0
400A
1.0
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 7 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
Figure 8 – On-state current vs. Power dissipation
– Sine wave
Figure 9 – On-state current vs. Heatsink
temperature – Sine wave
1800
140
M##431-20io2-24io2
M##431-20io2-24io2
Issue 2
Issue 2
180°
1600
120°
90°
60°
30°
120
1400
1200
1000
800
600
400
200
0
100
80
60
40
30°
60°
90° 120° 180°
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 10 – On-state current vs. Power dissipation
– Square wave
Figure 11 – On-state current vs. Heatsink
temperature – Square wave
1800
140
M##431-20io2-24io2
M##431-20io2-24io2
Issue 2
Issue 2
1600
1400
1200
120
100
80
60
40
20
0
d.c.
270°
180°
120°
90°
1000
800
60°
30°
600
400
200
0
30°
60° 90° 120° 180° 270° d.c.
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 8 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
Figure 12 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+07
M##431-20io2-24io2
Issue 2
I2t: VRRM 10V
Tj (initial) = 125°C
I2t: 60% VRRM
1.00E+06
ITSM: VRRM 10V
ITSM: 60% VRRM
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Figure 13 – Transient thermal impedance
0.1
Single Thyristor
M##431-20io2-24io2
Issue 2
0.01
0.001
0.0001
0.00001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 9 of 10
October, 2014
IXYS
Thyristor/Diode Module Types M##431-20io2 to M##431-24io2
Outline Drawing & Ordering Information
3
6 7
1
5 4 2
5 4 2
2
MCC
MCA
3 7 6
1
3
3
3
6 7 1 4 5
MCK
MCD
MDC
1
5 4 2
6 7
1
2
150A123
ORDERING INFORMATION
(Please quote 11 digit code as below)
M
##
431
io
2
Configuration code
CC, CA, CK, CD or
DC
Voltage code
VRRM/100
20-24
Fixed
Type Code
Fixed
Type Code
i = Critical dv/dt 1000 V/µs
o = Typical turn-off time
Fixed
Version Code
Typical order code: MCD431-22io2– MCD configuration, 2200V VRRM
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The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2
Page 10 of 10
October, 2014
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