MCA600-20IO1W_技术文档

Date: 13^thMarch, 2014

Data Sheet Issue: 2

Thyristor/Diode Modules M## 600

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MCC

MCD

MDC

MCA

MCK

MCDA

MDCA

2000

2200

600-20io1W

600-22io1W

600-20io1W

600-22io1W

600-20io1W

600-22io1W

600-20io1W

600-22io1W

600-20io1W

600-22io1W

600-20io1W

600-22io1W

600-20io1W

600-22io1W

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

2000-2200

2100-2300

V

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

Maximum average on-state current, T_water= 17°C, 4l/min ^{2), 3)}

Maximum average on-state current. T_water= 40°C, 4l/min ^{2), 3)}

Maximum average on-state current. T_water= 85°C, 4l/min ^{2), 3)}

710

600

A

348

A

I_T(RMS)MNominal RMS on-state current, T_water= 17°C, 4l/min ^{2), 3)}

1116

921

A

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_water= 17°C, 4l/min ³⁾

A

4)

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM£ 10V ⁴⁾

16.5

kA

A²s

A/µs

V

18.2

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

1.36×10⁶

1.66×10⁶

150

4)

I²t

I²t capacity for fusing t_p= 10 ms, V_RM£ 10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁵⁾

(di/dt)_cr

Critical rate of rise of on-state current (non-repetitive) ⁵⁾

300

V_RGM

P_G(AV)

P_GM

Peak reverse gate voltage

5

Mean forward gate power

4

W

Peak forward gate power

30

W

V_ISOL

T_{vj op}

T_stg

Isolation Voltage ⁶⁾

3500

-40 to +125

-40 to +150

V

Operating temperature range

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for T_vjbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Current ratings do not include adjustments, which may be necessary due to heat being returned by cable connections.

4) Half-sinewave, 125°C T_vjinitial.

5) V_D= 67% V_DRM, I_FG= 2 A, t_r£ 0.5µs, T_C= 125°C.

6) AC RMS voltage, 50 Hz, 1min test

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 1 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Thyristor Characteristics

PARAMETER

MIN. TYP. MAX. TEST CONDITIONS ¹⁾

UNITS

V_TM

V_T0

r_T

Maximum peak on-state voltage

Threshold voltage

-

1.69 I_TM= 1800 A

1.16 I_TM= 600 A

0.88

V

Slope resistance

0.46

mW

Critical rate of rise of off-state

voltage

(dv/dt)_cr

1000

-

V_D= 80% V_DRM, linear ramp, Gate o/c

V/µs

I_DRM

I_RRM

V_GT

I_GT

I_H

Peak off-state current

-

70

Rated V_DRM

Rated V_RRM

mA

V

Peak reverse current

-

Gate trigger voltage

3.0

300

T_vj= 25°C, V_D= 10 V, I_T= 3 A

Gate trigger current

-

mA

Holding current

-

1000 T_vj= 25°C

1.5

t_gd

Gate controlled turn-on delay time

Turn-on time

0.6

1.2

3000

I_FG= 2 A, t_r= 0.5 µs, V_D= 67%V_DRM

I_TM= 2000 A, di/dt = 10 A/µs, T_vj= 25°C

,

µs

t_gt

2.5

-

Q_rr

Q_ra

I_rm

Recovered Charge

µC

A

Recovered Charge, 50% chord

Reverse recovery current

Reverse recovery time, 50% chord

1800 2400

I_TM= 1000 A, t_p= 1 ms, di/dt = 10A/µs,

V_R= 50 V

140

26

-

t_rr

µs

I_TM= 1000 A, t_p= 1 ms, di/dt = 10 A/µs,

V_R= 50 V, V_DR= 80%V_DRM, dv_DR/dt = 20

V/µs

I_TM= 1000 A, t_p= 1 ms, di/dt = 10 A/µs,

V_R= 50 V, V_DR= 80%V_DRM, dv_DR/dt = 200 V/µs

-

200

300

-

t_q

Turn-off time

µs

Diode Characteristics

PARAMETER

MIN. TYP. MAX. TEST CONDITIONS ¹⁾

UNITS

V_FM

V_T0

r_T

Maximum peak forward voltage

Threshold voltage

-

1.11 I_FM= 1800 A

V

-

0.72

Slope resistance

-

0.143

mW

mA

µC

A

I_RRM

Q_rr

Q_ra

I_rm

Peak reverse current

50

-

Rated V_RRM

Recovered Charge

2200

Recovered Charge, 50% chord

Reverse recovery current

Reverse recovery time, 50% chord

1800 2250

I_FM= 1000 A, t_p= 1ms, di/dt = 10 A/µs,

V_R= 50 V

145

25

-

t_rr

µs

Module Characteristics

PARAMETER

MIN. TYP. MAX. TEST CONDITIONS ¹⁾

UNITS

R_thJW

F₁

Thermal resistance, junction to water

Mounting force (to heatsink)

Mounting force (to terminals)

Weight

-

0.09 Single Thyristor/Single Diode

5.75

K/W

Nm

kg

4.25

10.2

-

2)

F₂

-

13.8

W_t

1.8

-

Notes:

1) Unless otherwise indicated T_vj=125°C.

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 2 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

2) Screws must be lubricated

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 3 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V_DRMV_DSMV_RRM

V_RSM

V

2100

2300

V_DV_R

DC V

1250

1350

Voltage Grade

V

2000

2200

20

22

2.0 Extension of Voltage Grades

This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_vjbelow 25°C.

4.0 Repetitive dv/dt

Standard dv/dt is 1000V/µs.

5.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I_GM

4A/µs

I_G

t_p1

The magnitude of I_GMshould be between five and ten times I_GT, which is shown on page 2. Its duration

(t_p1) should be 20µs or sufficient to allow the anode current to reach ten times I_L, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

‘back-porch’ current I_Gshould remain flowing for the same duration as the anode current and have a

magnitude in the order of 1.5 times I_GT.

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 4 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

8.0 Computer Modelling Parameters

8.1 Thyristor Dissipation Calculations

DT

2

-V_{T 0}+ V_{T 0}+ 4× ff ²×r ×W_AV

W_AV=

T

R_th

I_AV=

and:

2× ff ²×r

T

DT = T_{j max}-T_K

Where V_T0= 0.88 V, r_T= 0.46 mW,

R_th= Supplementary thermal impedance, see table below and

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle

Square wave

Sine wave

30°

60°

90°

120°

180°

270°

d.c.

0.0976

0.0950

0.0955

0.0933

0.0942

0.0924

0.0933

0.0917

0.0920

0.0902

0.0907

0.09

Form Factors

90°

Conduction Angle

Square wave

Sine wave

30°

3.464

3.98

60°

120°

1.732

1.879

180°

1.414

1.57

270°

d.c.

1

2.449

2.778

2

1.149

2.22

8.2 Calculating V_T/V_Fusing ABCD Coefficients

The on-state/forward characteristics, I_Tvs. V_T, on pages 6 & 11 are represented in two ways;

(i) the well established V_T0and r_Ttangent used for rating purposes and

(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin terms of

I_Tgiven below:

V_T= A + B ×ln

(

I_T+ C × I_T+ D × I_T

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics.

The resulting values for V_Tagree with the true device characteristic over a current range, which is

limited to that plotted.

Thyristor coefficients

25°C

125°C

A

B

C

D

2.296566505

-0.3387419

-6.25982×10^-5

0.617965877

0.01056009

2.13809×10^-4

0.01430982

0.04767141

Diode coefficients

25°C

125°C

A

B

C

D

0.578986196

0.1048225

1.61162×10^-4

-7.480625×10^-3

-0.214099731

0.2916851

5.15459×10^-4

-0.04232154

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 5 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

8.3 D.C. Thermal Impedance Calculation

-t

p=n

æ

ö

÷

t _p

ç

p

r = r × 1- e

å

t

ç

÷

p=1

è

ø

Where p = 1 to n

n

t

r_t

r_p

t_p

= number of terms in the series

= Duration of heating pulse in seconds.

= Thermal resistance at time t.

= Amplitude of p_thterm.

= Time Constant of r_thterm.

The coefficients for this device are shown in the tables below:

D.C.

Term

r_p

1

2

3

4

5

0.07972

4.46119

3.64310×10^-3

4.87795×10^-3

1.91134×10^-3

5.07740×10^-3

2.146406×10^-3

6.07258×10^-3

0.71394

0.06312

t_p

9.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1

Fig. 1

(ii) Q_rris based on a 150 µs integration time i.e.

150µs

Q_rr= i_rr.dt

ò

0

(iii)

t₁

K Factor =

t₂

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 6 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Thyristor Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

10000

0.1

M##600-20io1W-22io1W

Issue 2

M##600-20io1W-22io1W

Issue 2

Single Thyristor

T_j= 25°C

T_j= 125°C

0.01

1000

0.001

0.0001

100

0.00001

0.00001 0.0001 0.001

0

0.5

1

1.5

2

2.5

3

3.5

0.01

0.1

1

10

100

Instantaneous On-state voltage - V_TM(V)

Time (s)

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

35

8

M##600-20io1W-22io1W

Issue 2

T_j=25°C

7

30

6

Max V_Gdc

25

5

20

15

4

3

2

I_GT, V_GT

P_GMax 30W dc

10

P_G4W dc

5

1

Min V_Gdc

I_GD, V_GD

Min V_Gdc

0

2

4

6

8

10

0

0.2

0.4

0.6

0.8

1

Gate Trigger Current - I_GT(A)

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 7 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Figure 5 - Total recovered charge, Q_rr

Figure 6 - Recovered charge, Q_ra(50% chord)

10000

M##600-20io1W-22io1W

Issue 2

T_j=125°C

2000A

1500A

1000A

500A

2000A

1500A

1000A

500A

1000

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I_rm

Figure 8 - Maximum recovery time, t_rr(50% chord)

100

10000

M##600-20io1W-22io1W

Issue 2

T_j=125°C

2000A

1500A

1000A

500A

1000

100

10

2000A

1500A

1000A

500A

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 8 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Figure 9- On-state current vs. Power dissipation

- Sine wave

Figure 10 - On-state current vs. water temperature

- Sine wave

1400

140

M##600-20io1W-22io1W

Issue 2

180°

120°

90°

1200

1000

800

600

400

200

0

120

60°

30°

100

80

60

40

20

30°

60° 90° 120° 180°

0

200

400

600

800

0

200

400

600

800

Mean forward current (A) (Whole cycle averaged)

Figure 11 - On-state current vs. Power

dissipation - Square wave

Figure 12 - On-state current vs. water temperature

- Square wave

1400

140

M##600-20io1W-22io1W

Issue 2

1200

120

1000

100

80

d.c.

800

600

400

200

0

270°

180°

120°

90°

60°

30°

60°

90°

120°

180°

270°

d.c.

60

40

20

0

200

400

600

800

1000

0

200

400

600

800

1000

Mean Forward Current (Amps) (Whole Cycle Averaged)

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 9 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Figure 13 - Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

100000

1.00E+07

I²t: V_RRM£10V

I²t: 60% V_RRM

10000

1.00E+06

I_TSM: V_RRM£10V

I_TSM: 60% V_RRM

T_j(initial) = 125°C

M##600-20io1W-22io1W

Issue 2

1000

1.00E+05

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Figure 14 – Average on-state current and Power loss Vs. Inlet water temperature

10000

M##600-20io1W-22io1W

Issue 2

1000

Power Loss

Average Current

100

90

0

10

20

30

40

50

60

70

80

Inlet water temperature, T_water(°C)

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 10 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Diode curves

Figure 15 - Total recovered charge, Q_rr

Figure 16 - Recovered charge, Q_ra(50% chord)

10000

M##600-20io1W-22io1W

Issue 2

T_j=125°C

2000A

1500A

1000A

500A

2000A

1500A

1000A

500A

1000

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Figure 17 - Peak reverse recovery current, I_rm

Figure 18 - Maximum recovery time, t_rr(50% chord)

100

10000

M##600-20io1W-22io1W

Issue 2

T_j=125°C

2000A

1500A

1000A

500A

10

1000

2000A

1500A

1000A

500A

1

100

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 11 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Figure 19 – Instantaneous forward voltage, V_F

10000

M##600-20io1W-22io1W

Issue 2

T_j= 125°C

T_j= 25°C

1000

100

0

0.5

1

1.5

2

2.5

Instantaneous On-state voltage - V_FM(V)

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 12 of 12

March, 2014

Thyristor/Diode Module Types M##600-20ioW and M##600-22ioW

Outline Drawing & Ordering Information

3

6 7

1

5 4 2

2

MCC

MCD

3

6 7

3 7 6

5 4 2

MCA

MCK

3

6 7 1 4 5

2

5 4 2

2

3

1

MCDA

MDCA

3 7 6

150A113

ORDERING INFORMATION

(Please quote 12 digit code as below)

tt

M

##

600

io

1

W

Configuration code

CC, CD, DC, CA,

CK, CDA, DCA

Average

Current

Rating

Voltage code

V_DRM/100

20-22

Fixed

Version

Code

Fixed

Type Code

i = Critical dv/dt 1000 V/µs

o = Typical turn-off time

Water

cooled base

Order code: MCD600-20io1W– MCD configuration, 2000V V_RRM, water cooled base

IXYS Semiconductor GmbH

Edisonstraße 15

D-68623 Lampertheim

Tel: +49 6206 503-0

IXYS UK Westcode Ltd

Langley Park Way, Langley Park, Chippenham,

Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

Fax: +44 (0)1249 659448

E-mail: sales@ixysuk.com

IXYS Corporation

1590 Buckeye Drive

www.ixysuk.com

Milpitas CA 95035-7418

IXYS Long Beach

IXYS Long Beach, Inc

2500 Mira Mar Ave, Long Beach

CA 90815

Tel: +1 (408) 457 9000

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

www.ixys.com

Tel: +1 (562) 296 6584

Fax: +1 (562) 296 6585

E-mail: service@ixyslongbeach.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without

prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily

subject to the conditions and limits contained in this report.

Data Sheet. Types M##600-20io1W and M##600-22io1W Issue 2

Page 13 of 12

March, 2014


型号：	MCA600-20IO1W
厂家：	LITTELFUSE
描述：	Silicon Controlled Rectifier,
文件：	总14页 (文件大小：1039K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCA600-20IO1W [LITTELFUSE]

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